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Eq. A.7 then becomes L(t) F = sin(απ) απ(1 − α) ( µ0 ) (νt) α with α = kT . ν ∆E V (A.10) Using this equation the displacement/field ratio only depends on three parameters, the width of the exponential band-tail ∆E V , the band mobility µ 0 describing the mobility of charge carriers in extended states and the attempt to escape frequency ν, all describing crucial properties of band-tail. The analysis of the multiple trapping model presented above is based on the (plausible) assumption that a Fermi-Dirac type of distribution applies to the carriers in traps [186, 128, 188]. This ”TROK” approximation has been shown by Monte-Carlo calculations to be quite good for exponential band-tails, and can be shown to be exact for the special case α = 1/2 [189]. For non-exponential densities-of-states, the TROK approximation is unreliable. 109
Chapter A: Algebraic Description of the Multiple Trapping Model 110
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Forschungszentrum Jülich in der He
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Forschungszentrum Jülich GmbH Inst
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Kurzfassung In der vorliegenden Arb
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Abstract The electronic properties
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Contents 1 Introduction 1 2 Fundame
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CONTENTS C Abbreviations, Physical
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Chapter 1 Introduction Solar cells
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defect states provided that they ar
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Chapter 8: In this chapter, the inf
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Chapter 2 Fundamentals In this firs
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2.2 Electronic Density of States St
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2.2 Electronic Density of States ta
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2.2 Electronic Density of States Fi
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2.3 Charge Carrier Transport influe
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2.3 Charge Carrier Transport functi
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Chapter 3 Sample Preparation and Ch
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3.1 Characterization Methods Figure
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3.1 Characterization Methods Homoge
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3.1 Characterization Methods µ Fig
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3.1 Characterization Methods compar
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3.1 Characterization Methods bution
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3.1 Characterization Methods posite
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3.2 Deposition Technique admixture
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3.3 Sample Preparation 3.3.1 Sample
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3.3 Sample Preparation reverse bias
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Chapter 4 Intrinsic Microcrystallin
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4.2 Electrical Conductivity Figure
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4.3 ESR Signals and Paramagnetic St
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4.3 ESR Signals and Paramagnetic St
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4.4 Discussion - Relation between E
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4.4 Discussion - Relation between E
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Chapter 5 N-Type Doped µc-Si:H In
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5.2 Electrical Conductivity Figure
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5.4 Dangling Bond Density Figure 5.
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5.5 Conduction Band-Tail States Fig
Page 72 and 73: 5.6 Discussion concentration evalua
Page 74 and 75: 5.7 Summary Figure 5.7: Schematic b
Page 76 and 77: Chapter 6 Reversible and Irreversib
Page 78 and 79: 6.1 Metastable Effects in µc-Si:H
Page 88 and 89: 6.2 Irreversible Oxidation Effects
Page 94 and 95: 6.3 On the Origin of Instability Ef
Page 96 and 97: 6.3 On the Origin of Instability Ef
Page 98 and 99: Chapter 7 Transient Photocurrent Me
Page 100 and 101: 7.2 Transient Photocurrent Measurem
Page 106 and 107: 7.3 Temperature Dependent Drift Mob
Page 108 and 109: 7.4 Multiple Trapping in Exponentia
Page 110 and 111: 7.5 Discussion Table 7.2: Multiple
Page 112 and 113: 7.5 Discussion 7.5.3 The Meaning of
Page 114 and 115: Chapter 8 Schematic Density of Stat
Page 116 and 117: silicon as shown in Fig. 8.1 b, whi
Page 118 and 119: Chapter 9 Summary In the present wo
Page 120 and 121: Appendix A Algebraic Description of
Page 124 and 125: Appendix B List of Samples Table B.
Page 126 and 127: Table B.3: Parameters of n-type µc
Page 128 and 129: Appendix C Abbreviations, Physical
Page 130 and 131: µ d Drift mobility µ d,h Hole dri
Page 132 and 133: Bibliography [1] E. Becquerel. Mém
Page 134 and 135: BIBLIOGRAPHY [21] D. Will, C. Lerne
Page 136 and 137: BIBLIOGRAPHY [45] H. Overhof and M.
Page 138 and 139: BIBLIOGRAPHY [66] P.W. Anderson. Ab
Page 140 and 141: BIBLIOGRAPHY [93] J.W. Orton and M.
Page 142 and 143: BIBLIOGRAPHY [121] J.R. Haynes and
Page 144 and 145: BIBLIOGRAPHY [148] W. Luft and Y.S.
Page 146 and 147: BIBLIOGRAPHY [170] G.N. Advani, R.
Page 148 and 149: List of Publications 1. T. Dylla, R
Page 150 and 151: Acknowledgments At this point, I wa
Page 152 and 153: Schriften des Forschungszentrums J
Page 159: Forschungszentrum Jülich in der He
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