Measurements

Chapter B: List of Samples
Table B.2: Parameters of intrinsic µc-Si:H prepared using a HWCVD process. The filament
temperature was T F = 1750 ◦ C for samples prepared at T S = 450 ◦ C and T F = 1650 ◦ C
for the other. The pressure was p = 5Pa.
Sample [SiH 4 ] m [mg] σ D [S/cm] IC RS N S g-value
285 ◦ C 01c050 3.0 23.0 1.38×10 −06 0.77 2.13×10 +17 2.0480
01c045 5.0 24.0 2.42×10 −06 0.65 1.36×10 +16 2.0050
01c052 6.3 22.1 1.12×10 −05 0.54 8.67×10 +15 2.0048
01c047 7.5 15.3 1.03×10 −06 0.4 2.28×10 +16 2.0052
01c051 8.8 15.0 6.69×10 −07 0.29 1.46×10 +16 2.0051
01c048 10.0 14.1 1.05×10 −10 0 4.84×10 +16 2.0050
01c074 10.0 29.3 0.1 1.42×10 +16 2.0049
01c077 11.3 24.8 0 1.18×10 +16 2.0050
01c075 12.5 28.9 0 1.23×10 +16 2.0049
330 ◦ C 01c067 5.0 31.6 2.74×10 −07 2.60×10 +17 2.0050
01c073 5.0 35.6 2.74×10 −07 0.63 2.84×10 +17 2.0050
01c064 7.5 25.6 1.15×10 −05 0.58 1.29×10 +17 2.0053
01c066 10.0 28.1 1.13×10 −06 0.42 7.70×10 +16 2.0053
01c072 11.3 27.1 5.13×10 −08 0.31 3.08×10 +16 2.0051
01c068 12.5 29.5 9.38×10 −12 0.15 4.37×10 +16 2.0053
01c065 15.0 17.9 1.95×10 −11 0 1.40×10 +17 2.0038
01c070 19.0 19.5 0 8.30×10 +16 2.0051
450 ◦ C 00C247 5.0 2.38×10 −07 0.76 4.80×10 +18 2.0050
00C235 7.5 6.94×10 −07 0.66 1.70×10 +18 2.0048
00C264 10.0 5.01×10 −07 0.75 4.30×10 +18 2.0056
00C241 12.5 3.30×10 −07 0.69 1.00×10 +18 2.0053
00C258 15.6 3.05×10 −07 0.74 8.10×10 +17 2.0050
00C266 15.6 2.46×10 −08 0.48 1.30×10 +18
00C242 18.8 7.64×10 −08 0.58 5.20×10 +17 2.0050
00C256 21.9 1.59×10 −08 0.55 1.00×10 +18 2.0053
00C261 25.0 7.09×10 −11 0.1 9.00×10 +16 2.0057
112