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BIBLIOGRAPHY [21] D. Will, C. Lerner, W. Fuhs, and K. Lips. Transport and recombination channels in undoped microcrystalline silicon studied by esr and edmr. Mater. Res. Soc. Proc., 467:361, 1997. [22] A. Mück, U. Zastrow, O. Vetterl, and B. Rech. SIMS Depth Profile Analysis of Oxygen Contermination in Hydrogenated Amorphous and Microcrystalline Silicon, page 689. Elsevier Science B.V., Amsterdam, 2000. [23] R. Brüggemann, A. Hierzenberger, H.N. Wanka, and M.B. Schubert. Electronic properties of hot-wire deposited nanocrystalline silicon. Mater. Res. Soc., 507:921, 1998. [24] M. Stutzmann and D. Biegelsen. The microscopic structure of defects in a-si:h and related materials. In Amoprhous Silicon and Related Materials, pages 557–594. World Scientific, Singapore, 1988. [25] M. Stutzmann. On the structure of dangling bond defects in silicon. Z. Phys. Chem. Neue Folge, 151(1-2):211, 1987. [26] S. Yamasaki, Jung-Kyu Lee, T. Umeda, J. Isoya, and K. Tanaka. Spatial distribution of phosphorus atoms surrounding spin centers of p-doped hydrogenated amorphous silicon elucidated by pulsed esr. J. Non-Cryst. Solids, 198-200(1):330–333, 1996. [27] S. Hasegawa, S. Narikawa, and Y. Kurata. Esr and electrical properties of p-doped microcrystalline si. Philos. Mag. B, 48(5):431–447, 1983. [28] S. Hasegawa, S. Narikawa, and Y. Kurata. Dependences of esr and electrical properties on p doping ratio for microcrystalline si. Physica B & C, 117-118B+C(2):914–916, 1983. [29] F. Finger, C. Malten, P. Hapke, R. Carius, R. Fluckiger, and H. Wagner. Free electrons and defects in microcrystalline silicon studied by electron spin resonance. Philos. Mag. Lett, 70(4):247–254, 1994. [30] J. Müller. Electron Spin Resonance Studies on Microcrystalline Semiconductors. Berichte des Forschungszentrum Jülichs 3615, ISSN 0944-2952, 1998. [31] M. Kondo, S. Yamasaki, and A. Matsuda. Microscopic structure of defects in microcrystalline silicon. J. Non-Cryst. Solid, 266-269:544, 2000. [32] K. Lips, P. Kanschat, and W. Fuhs. Defects and recombination in microcrystalline silicon. Solar Energy Materials and Solar Cells, 78:513, 2003. 121
BIBLIOGRAPHY [33] F. Finger, J. Müller, C. Malten, and H. Wagner. Electronic states in hydrogenated microcrystalline silicon. Philos. Mag. B, 77:805, 1998. [34] P. Kanschat, K. Lips, R. Brüggemann, A. Hierzenberger, I. Sieber, and W. Fuhs. Paramagnetic defects in undoped microcrystalline silicon deposited by the hot-wire technique. Mater. Res. Soc., 507:793, 1998. [35] J. Müller, F. Finger, R. Carius, and H. Wagner. Electron spin resonance investigation of electronic states in hydrogenated microcrystalline silicon. Phys. Rev. B, 60:11666, 1999. [36] P. Kanschat, H. Mell, K. Lips, and W. Fuhs. Defect and tail states in microcrystalline silicon investigated by pulsed esr. Mater. Res. Soc. Proc., 609:A27.3, 2000. [37] M. Kondo, T. Ohe, K. Saito, T. Nishimiya, and A. Matsuda. Morphological study of kinetic roughening on amorphous and microcrystalline silicon surface. J. Non-Cryst. Solids, 227-230(B):890–895, 1998. [38] P. Kanschat, K. Lips, and W. Fuhs. Identification of non-radiative recombination paths in microcrystalline silicon (µc-si:h). J. Non-Cryst. Solids, 266-269:524–528, 2000. [39] F. Finger, J. Müller, C. Malten, R. Carius, and H. Wagner. Electronic properties of microcrystalline silicon investigated by electron spin resonance and transport measurements. Journal of Non-Crystalline Solids, 226- 269:511, 2000. [40] P. Kanschat. ESR und spinabhängige Rekombination in mikrokristallinem Silizium. PhD thesis, Philipps-Universität Marburg, 2000. [41] J.W. Seto. The electrical properties of polycrystalline silicon films. Journal of Applied Physics, 46:5247, 1975. [42] T. Weis, R. Lipperheide, U. Wille, and S. Brehme. Barrier-controlled carrier transport in microcrystalline semiconducting materials: Description within a unified model. J. Appl. Phys., 92(3):1411, 2002. [43] S. Brehme, P. Kanschat, T. Weis, K. Lips, and W. Fuhs. Barrier-controlled transport in highly doped microcrystalline silicon: role of interface states. Diffus. Defect Data B, Solid State Phenom., 80-81:225, 2001. [44] R. Carius, F. Finger, U. Backhausen, M. Luysberg, P. Hapke, L. Houben, M. Otte, and H. Overhof. Electronic properties of microcrystalline silicon. Mater. Res. Soc. Proc., 467:283, 1997. 122
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Forschungszentrum Jülich in der He
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Forschungszentrum Jülich GmbH Inst
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Kurzfassung In der vorliegenden Arb
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Abstract The electronic properties
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Contents 1 Introduction 1 2 Fundame
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CONTENTS C Abbreviations, Physical
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Chapter 1 Introduction Solar cells
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defect states provided that they ar
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Chapter 8: In this chapter, the inf
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Chapter 2 Fundamentals In this firs
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2.2 Electronic Density of States St
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2.2 Electronic Density of States ta
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2.2 Electronic Density of States Fi
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2.3 Charge Carrier Transport influe
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2.3 Charge Carrier Transport functi
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Chapter 3 Sample Preparation and Ch
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3.1 Characterization Methods Figure
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3.1 Characterization Methods Homoge
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3.1 Characterization Methods µ Fig
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3.1 Characterization Methods compar
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3.1 Characterization Methods bution
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3.1 Characterization Methods posite
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3.2 Deposition Technique admixture
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3.3 Sample Preparation 3.3.1 Sample
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3.3 Sample Preparation reverse bias
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Chapter 4 Intrinsic Microcrystallin
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4.2 Electrical Conductivity Figure
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4.3 ESR Signals and Paramagnetic St
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4.3 ESR Signals and Paramagnetic St
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4.4 Discussion - Relation between E
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4.4 Discussion - Relation between E
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Chapter 5 N-Type Doped µc-Si:H In
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5.2 Electrical Conductivity Figure
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5.4 Dangling Bond Density Figure 5.
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5.5 Conduction Band-Tail States Fig
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5.6 Discussion concentration evalua
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5.7 Summary Figure 5.7: Schematic b
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Chapter 6 Reversible and Irreversib
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6.1 Metastable Effects in µc-Si:H
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Page 84 and 85: 6.1 Metastable Effects in µc-Si:H
Page 86 and 87: 6.1 Metastable Effects in µc-Si:H
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Page 96 and 97: 6.3 On the Origin of Instability Ef
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Page 100 and 101: 7.2 Transient Photocurrent Measurem
Page 106 and 107: 7.3 Temperature Dependent Drift Mob
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Page 112 and 113: 7.5 Discussion 7.5.3 The Meaning of
Page 114 and 115: Chapter 8 Schematic Density of Stat
Page 116 and 117: silicon as shown in Fig. 8.1 b, whi
Page 118 and 119: Chapter 9 Summary In the present wo
Page 120 and 121: Appendix A Algebraic Description of
Page 122 and 123: Eq. A.7 then becomes L(t) F = sin(
Page 124 and 125: Appendix B List of Samples Table B.
Page 126 and 127: Table B.3: Parameters of n-type µc
Page 128 and 129: Appendix C Abbreviations, Physical
Page 130 and 131: µ d Drift mobility µ d,h Hole dri
Page 132 and 133: Bibliography [1] E. Becquerel. Mém
Page 136 and 137: BIBLIOGRAPHY [45] H. Overhof and M.
Page 138 and 139: BIBLIOGRAPHY [66] P.W. Anderson. Ab
Page 140 and 141: BIBLIOGRAPHY [93] J.W. Orton and M.
Page 142 and 143: BIBLIOGRAPHY [121] J.R. Haynes and
Page 144 and 145: BIBLIOGRAPHY [148] W. Luft and Y.S.
Page 146 and 147: BIBLIOGRAPHY [170] G.N. Advani, R.
Page 148 and 149: List of Publications 1. T. Dylla, R
Page 150 and 151: Acknowledgments At this point, I wa
Page 152 and 153: Schriften des Forschungszentrums J
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