Measurements

More documents

Recommendations

Info

Bibliography [1] E. Becquerel. Mémoire sur les effets électriques produits sous l’influence des rayons solaires. Comptes Rendus de l’Academie de Science, 9:561, 1839. [2] D. M. Chapin, C. S. Fuller, and G. L. Pearson. A new silicon p-n junction photocell for converting solar radiation into electrical power. Journal of Applied Physics, 25:645, 1954. [3] M.A. Green, K. Emery, D.L. King, S. Igari, and W. Warta. Solar cell efficiency tables (version 19). Prog. Photovolt., Res. Appl, 10(1):55–61, 2002. [4] B. Rech and H. Wagner. Potential of amorphous silicon for solar cells. Appl. Phys. A, A69(2):155–167, 1999. [5] W. Hoffmann. Pv solar electricity: One among the new millennium industries. Proceedings of the 17 th EPVSEC, Munich,, 395:851, 2001. [6] A. Kreutzmann. Photon, 2:55, 2002. [7] D.L. Staebler and C.R. Wronski. Reversible conductivity charge in discharge-produced amorphous si. Appl. Phys. Lett., 31(4):292, 1977. [8] S. Vepřek and V. Mareček. The preparation of thin layers of ge and si by chemical hydrogen plasma transport. Solid-State Electronics, 11:683, 1968. [9] S. Usui and M. Kikuchi. Properties of heavily doped gd-si with low resistivity. J. Non-Cryst. Solids, 34(1):1–11, 1979. [10] L. Houben, M. Luysberg, P. Hapke, R. Carius, F. Finger, and H. Wagner. Structural properties of microcrystalline silicon in the transition from highly crystalline to amorphous growth. Phil. Mag. A, 77:1447, 1998. 119
BIBLIOGRAPHY [11] M. Tzolov, F. Finger, R. Carius, and P. Hapke. Optical and transport studies on thin microcrystalline silicon films prepared by very high frequency glow discharge for solar cell applications. J. Appl. Phys., 81:7376, 1997. [12] O. Vetterl. On the Physics of Microcrystalline Silicon Thin Film Solar Cells. PhD thesis, Heinrich-Heine Universität Düsseldorf, 2001. [13] S. Klein. Microcrystalline Silicon Prepared by Hot Wire CVD: Preparation and Characterisation of Material and Solar Cells. PhD thesis, Technische Universität München, 2003. [14] M . M. Goerlitzer, N. Beck, P. Torres, U. Kroll, H. Keppner, J. Meier, J. Koehler, N. Wyrsch, and A. Shah. Electronic transport and structure of microcrystalline silicon deposited by the vhf-gd technique. Mater. Res. Soc. Proc., 467:301, 1997. [15] N. Wyrsch, C. Droz, L. Feitknecht, M. Goerlitzer, U. Kroll, J. Meier, P. Torres, E. Vallat-Sauvain, A. Shah, and M. Vanecek. Hydrogenated microcrystalline silicon: from material to solar cells. Mater. Res. Soc. Proc., 609:A15.1.1, 2000. [16] O. Vetterl, A. Gross, T. Jana, S. Ray, A. Lambertz, and F. Carius, R. Finger. Changes in electric and optical properties of intrinsic microcrystalline silicon upon variation of the structural composition. Journal of Non- Crystalline Solids, 299-302:772, 2002. [17] A.L. Baia Neto, A. Lambertz, R. Carius, and F. Finger. Spin density and conductivity in thin silicon films upon transition from microcrystalline to amorphous growth. Phys. Stat. Sol. A, 186(1):R4, 2001. [18] A.L. Baia Neto, A. Lambertz, R. Carius, and F. Finger. Relationships between structure, spin density and electronic transport in ’solar-grade’ microcrystalline silicon films. J. Non-Cryst. Solids, 299-302(A):274, 2002. [19] J. Meier, R. Flückiger, H. Keppner, and A. Shah. Complete microcrystalline p-i-n solar cell-crystalline or amorphous cell behavior? Appl. Phys. Lett., 65(7):860, 1994. [20] S. Veprek, Z. Iqbal, R.O. Kuhne, P. Capezzuto, F.-A. Sarott, and J.K. Gimzewski. Properties of microcrystalline silicon. iv. electrical conductivity, electron spin resonance and the effect of gas adsorption. Journal of Physics C, 16(32):6241, 1983. 120
Page 1 and 2:
Forschungszentrum Jülich in der He
Page 4 and 5:
Forschungszentrum Jülich GmbH Inst
Page 6 and 7:
Kurzfassung In der vorliegenden Arb
Page 8 and 9:
Abstract The electronic properties
Page 10 and 11:
Contents 1 Introduction 1 2 Fundame
Page 12 and 13:
CONTENTS C Abbreviations, Physical
Page 14 and 15:
Chapter 1 Introduction Solar cells
Page 16 and 17:
defect states provided that they ar
Page 18 and 19:
Chapter 8: In this chapter, the inf
Page 20 and 21:
Chapter 2 Fundamentals In this firs
Page 22 and 23:
2.2 Electronic Density of States St
Page 24 and 25:
2.2 Electronic Density of States ta
Page 26 and 27:
2.2 Electronic Density of States Fi
Page 28 and 29:
2.3 Charge Carrier Transport influe
Page 30 and 31:
2.3 Charge Carrier Transport functi
Page 32 and 33:
Chapter 3 Sample Preparation and Ch
Page 34 and 35:
3.1 Characterization Methods Figure
Page 36 and 37:
3.1 Characterization Methods Homoge
Page 38 and 39:
3.1 Characterization Methods µ Fig
Page 40 and 41:
3.1 Characterization Methods compar
Page 42 and 43:
3.1 Characterization Methods bution
Page 44 and 45:
3.1 Characterization Methods posite
Page 46 and 47:
3.2 Deposition Technique admixture
Page 48 and 49:
3.3 Sample Preparation 3.3.1 Sample
Page 50 and 51:
3.3 Sample Preparation reverse bias
Page 52 and 53:
Chapter 4 Intrinsic Microcrystallin
Page 54 and 55:
4.2 Electrical Conductivity Figure
Page 56 and 57:
4.3 ESR Signals and Paramagnetic St
Page 58 and 59:
4.3 ESR Signals and Paramagnetic St
Page 60 and 61:
4.4 Discussion - Relation between E
Page 62 and 63:
4.4 Discussion - Relation between E
Page 64 and 65:
Chapter 5 N-Type Doped µc-Si:H In
Page 66 and 67:
5.2 Electrical Conductivity Figure
Page 68 and 69:
5.4 Dangling Bond Density Figure 5.
Page 70 and 71:
5.5 Conduction Band-Tail States Fig
Page 72 and 73:
5.6 Discussion concentration evalua
Page 74 and 75:
5.7 Summary Figure 5.7: Schematic b
Page 76 and 77:
Chapter 6 Reversible and Irreversib
Page 78 and 79:
6.1 Metastable Effects in µc-Si:H
Page 80 and 81:
6.1 Metastable Effects in µc-Si:H
Page 82 and 83: 6.1 Metastable Effects in µc-Si:H
Page 88 and 89: 6.2 Irreversible Oxidation Effects
Page 94 and 95: 6.3 On the Origin of Instability Ef
Page 96 and 97: 6.3 On the Origin of Instability Ef
Page 98 and 99: Chapter 7 Transient Photocurrent Me
Page 100 and 101: 7.2 Transient Photocurrent Measurem
Page 106 and 107: 7.3 Temperature Dependent Drift Mob
Page 108 and 109: 7.4 Multiple Trapping in Exponentia
Page 110 and 111: 7.5 Discussion Table 7.2: Multiple
Page 112 and 113: 7.5 Discussion 7.5.3 The Meaning of
Page 114 and 115: Chapter 8 Schematic Density of Stat
Page 116 and 117: silicon as shown in Fig. 8.1 b, whi
Page 118 and 119: Chapter 9 Summary In the present wo
Page 120 and 121: Appendix A Algebraic Description of
Page 122 and 123: Eq. A.7 then becomes L(t) F = sin(
Page 124 and 125: Appendix B List of Samples Table B.
Page 126 and 127: Table B.3: Parameters of n-type µc
Page 128 and 129: Appendix C Abbreviations, Physical
Page 130 and 131: µ d Drift mobility µ d,h Hole dri
Page 134 and 135: BIBLIOGRAPHY [21] D. Will, C. Lerne
Page 136 and 137: BIBLIOGRAPHY [45] H. Overhof and M.
Page 138 and 139: BIBLIOGRAPHY [66] P.W. Anderson. Ab
Page 140 and 141: BIBLIOGRAPHY [93] J.W. Orton and M.
Page 142 and 143: BIBLIOGRAPHY [121] J.R. Haynes and
Page 144 and 145: BIBLIOGRAPHY [148] W. Luft and Y.S.
Page 146 and 147: BIBLIOGRAPHY [170] G.N. Advani, R.
Page 148 and 149: List of Publications 1. T. Dylla, R
Page 150 and 151: Acknowledgments At this point, I wa
Page 152 and 153: Schriften des Forschungszentrums J
Page 159: Forschungszentrum Jülich in der He
show all

Measurements

You also want an ePaper? Increase the reach of your titles

Delete template?

Save as template?