Trends in Lithography - JePPIX
Trends in Lithography - JePPIX
Trends in Lithography - JePPIX
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80 nm Dense L<strong>in</strong>es - Dipole<br />
F - 0.2 F - 0.1 F 0.0 F + 0.1 F + 0.2<br />
F - 0.25<br />
F - 0.3<br />
CD (nm)<br />
95<br />
90<br />
85<br />
80<br />
75<br />
70<br />
65<br />
60<br />
55<br />
50<br />
-0.60 -0.40 -0.20 0.00 0.20 0.40 0.60<br />
focus<br />
B<strong>in</strong>ary Mask Pitch = 160 nm<br />
NA = 0.75, σ = 0.88/0.64, Dipole<br />
Illum<strong>in</strong>ation<br />
Public<br />
Resist thickness = 210nm<br />
21.9<br />
22.2<br />
22.5<br />
22.8<br />
23.1<br />
23.4<br />
23.7<br />
24.0<br />
24.3<br />
24.6<br />
24.9<br />
25.2<br />
25.5<br />
25.8<br />
26.1<br />
F + 0.25<br />
F + 0.3
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