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CVD 沉積鎢鈦 / 氮化鈦附著層及阻擋層STIW TungstenPSGn + n + USG p + p + USGP 型井區深埋 SiO 2 層P 型晶圓N 型井區
鎢、氮化鈦和鈦 CMPSTI鎢鎢PSGn + n + USG p + p + USGP 型井區深埋 SiO 2 層P 型晶圓N 型井區
Page 1 and 2:
半導體製程技術Introduc
Page 3 and 4:
平坦化的定義• 平坦
Page 5 and 6:
平坦化的程度平坦化
Page 7 and 8:
CMP 的必要性• 微影技
Page 9 and 10:
CMP 的優點• CMP 有效的
Page 11 and 12:
CMP 的應用• 使用兩個
Page 13 and 14:
CMP 後清洗• CMP 後清洗
Page 15 and 16:
粒子移除機制酸性溶
Page 17 and 18:
Integration Technology尖端先
Page 19 and 20:
鉛錫合 - 金氮化矽PSG尖
Page 21 and 22:
高電流氧離子佈植氧
Page 23 and 24:
晶圓清洗深埋 SiO 2 層P
Page 25 and 26:
晶圓清洗P 型磊晶層深
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光阻塗佈與烘烤光阻P
Page 29 and 30:
曝光光阻P 型磊晶層深
Page 31 and 32:
蝕刻氧化層 , 蝕刻矽
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剝除屏蔽氧化層P 型
Page 35 and 36:
氧化 - 襯墊氧化層P 型
Page 37 and 38:
光阻塗佈與烘烤光阻
Page 39 and 40:
對準和曝光光阻氮化
Page 41 and 42:
蝕刻氮化矽和襯墊氧
Page 43 and 44:
蝕刻矽氮化矽深埋 SiO 2
Page 45 and 46:
氧化 - 阻擋氧化層氮
Page 47 and 48:
化學機械研磨 (CMP) USG
Page 49 and 50:
剝除襯墊氧化層STIP 型
Page 51 and 52:
氧化 - 犧牲氧化層STIP
Page 53 and 54:
光罩 2: N- 型井區
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曝光後烘烤 - 顯影和
Page 57 and 58:
PMOS V T 調整佈植硼離子
Page 59 and 60:
光阻塗佈與烘烤光阻S
Page 61 and 62:
對準和曝光光阻STI深
Page 63 and 64:
P- 型井區佈植硼離子 ,
Page 65 and 66:
剝除光阻STIP 型井區深
Page 67 and 68:
晶圓清洗STIP 型井區深
Page 69 and 70: LPCVD 沉積非晶矽閘極
Page 71 and 72: 光罩 4- 閘極和局部連
Page 73 and 74: 曝光後烘烤 , 顯影和
Page 75 and 76: 剝除光阻非晶矽STIP 型
Page 77 and 78: 多晶矽退火和氧化多
Page 79 and 80: 光罩 5- NMOS LDD 佈植
Page 81 and 82: 曝光後烘烤 - 顯影和
Page 83 and 84: 剝除光阻STIP 型井區深
Page 85 and 86: 光罩 6: PMOS LDD 佈植
Page 89 and 90: 剝除光阻STIP 型井區深
Page 91 and 92: 氮化矽和 USG 回蝕刻 (Et
Page 93 and 94: 光罩 7- NMOS S/D 佈植
Page 97 and 98: 剝除光阻STIn + n +P 型井
Page 99 and 100: 光罩 8- PMOS S/D 佈植
Page 103 and 104: 剝除光阻STIn + n + USG p + p
Page 105 and 106: 氬離子濺射蝕刻STIn + n
Page 107 and 108: 快速加熱退火氮化鈦
Page 109 and 110: PECVD 沉積氮化矽鈷矽
Page 111 and 112: CMP 摻磷矽玻璃 ( PSG)STIPS
Page 113 and 114: 光罩 9- 接觸窗及局部
Page 117 and 118: 剝除光阻STIPSGn + n + USG p
Page 119: 鈦和氮化鈦濺鍍沉積
Page 123 and 124: 自旋塗佈介電質 (SOD)
Page 125 and 126: PECVD 沉積 SiC 蝕刻停止
Page 127 and 128: 沉積 PE-TEOS 覆蓋層SODSODST
Page 129 and 130: 光罩 10- 金屬層接觸窗
Page 133 and 134: 剝除光阻SODSODSTI鎢鎢PSGn
Page 135 and 136: 光罩 11- 金屬溝槽 1
Page 139 and 140: 剝除光阻SODSODSTI鎢鎢PSGn
Page 141 and 142: PVD 沉積鉭和氮化鉭阻
Page 143 and 144: 巨量銅的電化學電鍍
Page 145 and 146: 銅、鉭和氮化鉭的 CMP
Page 147 and 148: 自旋塗佈介電質 (SOD)
Page 149 and 150: PECVD 沉積 SiC- 蝕刻停止
Page 151 and 152: PE-TEOS 覆蓋層 (Cap) 沉積SO
Page 153 and 154: 光罩 12- 金屬溝槽 2
Page 157 and 158: 剝除光阻SiCSODSOD銅 1 銅 1
Page 159 and 160: 光罩 13- 金屬層接觸窗
Page 163 and 164: 剝除光阻SODSODSOD銅 1 銅 1
Page 165 and 166: PVD 沉積鉭和氮化鉭阻
Page 167 and 168: 巨量銅的電化學電鍍
Page 169 and 170: 銅、鉭和氮化鉭的 CMP
Page 171 and 172:
PECVD 沉積 SiC- 蝕刻停止
Page 173 and 174:
光罩 14- 金屬層接觸窗
Page 175 and 176:
曝光後烘烤 - 顯影和
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剝除光阻SOD銅 2SODSOD銅 1
Page 179 and 180:
光阻塗佈與烘烤SODSOD
Page 181 and 182:
對準和曝光SODSOD銅 2SODSO
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介電質蝕刻SODSOD銅 2SODSO
Page 185 and 186:
氫電漿清潔SODSOD銅 2SODSO
Page 187 and 188:
SiC、 SOD、 SiC、 SOD、和 PE-
Page 189 and 190:
蝕刻金屬層接觸窗孔
Page 191 and 192:
光阻塗佈、對準和曝
Page 193 and 194:
剝除光阻SODSOD銅 3 SOD 銅
Page 195 and 196:
銅、鉭和氮化鉭的沉
Page 197 and 198:
光阻塗佈、對準及曝
Page 199 and 200:
剝除光阻SODSODSOD銅 4SOD銅
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介電質蝕刻SODSODSOD銅 4SO
Page 203 and 204:
氫電漿清潔SODSODSOD銅 4SO
Page 205 and 206:
PECVD 沉積氮化矽、 PSG
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鈍化護層蝕刻氮化矽P
Page 209 and 210:
聚醯胺膜塗佈聚醯胺
Page 211 and 212:
剝除聚醯胺膜氮化矽P
Page 213 and 214:
鉻、銅、和金襯裡層
Page 215 and 216:
光阻塗佈、對準及曝
Page 217 and 218:
剝除光阻鉛 - 錫合金氮
Page 219:
矽覆蓋絕緣技術CMOS IC
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