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• Introduction to fabricated Integrated Circuits• Semiconductor Material and Device• Oxidation and Diffusion• Lithographic technology• Ion Implementation• Etch Technology• Thin Film Technology• CMP Technology• Process Integration• CMOS Process
平坦化的定義• 平坦化是一個製程 , 它會移除表面形貌並使表面光滑化及平坦化• 平坦化的程度可指明晶圓表面的平坦度與平滑度完全順形成長的薄膜 , 沒有平坦化順形及平滑的薄膜 , 沒有平坦化
Page 1: 半導體製程技術Introduc
Page 5 and 6: 平坦化的程度平坦化
Page 7 and 8: CMP 的必要性• 微影技
Page 9 and 10: CMP 的優點• CMP 有效的
Page 11 and 12: CMP 的應用• 使用兩個
Page 13 and 14: CMP 後清洗• CMP 後清洗
Page 15 and 16: 粒子移除機制酸性溶
Page 17 and 18: Integration Technology尖端先
Page 19 and 20: 鉛錫合 - 金氮化矽PSG尖
Page 21 and 22: 高電流氧離子佈植氧
Page 23 and 24: 晶圓清洗深埋 SiO 2 層P
Page 25 and 26: 晶圓清洗P 型磊晶層深
Page 27 and 28: 光阻塗佈與烘烤光阻P
Page 29 and 30: 曝光光阻P 型磊晶層深
Page 31 and 32: 蝕刻氧化層 , 蝕刻矽
Page 33 and 34: 剝除屏蔽氧化層P 型
Page 35 and 36: 氧化 - 襯墊氧化層P 型
Page 37 and 38: 光阻塗佈與烘烤光阻
Page 39 and 40: 對準和曝光光阻氮化
Page 41 and 42: 蝕刻氮化矽和襯墊氧
Page 43 and 44: 蝕刻矽氮化矽深埋 SiO 2
Page 45 and 46: 氧化 - 阻擋氧化層氮
Page 47 and 48: 化學機械研磨 (CMP) USG
Page 49 and 50: 剝除襯墊氧化層STIP 型
Page 51 and 52: 氧化 - 犧牲氧化層STIP
Page 53 and 54:
光罩 2: N- 型井區
Page 55 and 56:
曝光後烘烤 - 顯影和
Page 57 and 58:
PMOS V T 調整佈植硼離子
Page 59 and 60:
光阻塗佈與烘烤光阻S
Page 61 and 62:
對準和曝光光阻STI深
Page 63 and 64:
P- 型井區佈植硼離子 ,
Page 65 and 66:
剝除光阻STIP 型井區深
Page 67 and 68:
晶圓清洗STIP 型井區深
Page 69 and 70:
LPCVD 沉積非晶矽閘極
Page 71 and 72:
光罩 4- 閘極和局部連
Page 73 and 74:
曝光後烘烤 , 顯影和
Page 75 and 76:
剝除光阻非晶矽STIP 型
Page 77 and 78:
多晶矽退火和氧化多
Page 79 and 80:
光罩 5- NMOS LDD 佈植
Page 81 and 82:
Page 83 and 84:
Page 85 and 86:
光罩 6: PMOS LDD 佈植
Page 87 and 88:
Page 89 and 90:
Page 91 and 92:
氮化矽和 USG 回蝕刻 (Et
Page 93 and 94:
光罩 7- NMOS S/D 佈植
Page 95 and 96:
Page 97 and 98:
剝除光阻STIn + n +P 型井
Page 99 and 100:
光罩 8- PMOS S/D 佈植
Page 101 and 102:
Page 103 and 104:
剝除光阻STIn + n + USG p + p
Page 105 and 106:
氬離子濺射蝕刻STIn + n
Page 107 and 108:
快速加熱退火氮化鈦
Page 109 and 110:
PECVD 沉積氮化矽鈷矽
Page 111 and 112:
CMP 摻磷矽玻璃 ( PSG)STIPS
Page 113 and 114:
光罩 9- 接觸窗及局部
Page 115 and 116:
Page 117 and 118:
剝除光阻STIPSGn + n + USG p
Page 119 and 120:
鈦和氮化鈦濺鍍沉積
Page 121 and 122:
鎢、氮化鈦和鈦 CMPSTI
Page 123 and 124:
自旋塗佈介電質 (SOD)
Page 125 and 126:
PECVD 沉積 SiC 蝕刻停止
Page 127 and 128:
沉積 PE-TEOS 覆蓋層SODSODST
Page 129 and 130:
光罩 10- 金屬層接觸窗
Page 131 and 132:
Page 133 and 134:
剝除光阻SODSODSTI鎢鎢PSGn
Page 135 and 136:
光罩 11- 金屬溝槽 1
Page 137 and 138:
Page 139 and 140:
剝除光阻SODSODSTI鎢鎢PSGn
Page 141 and 142:
PVD 沉積鉭和氮化鉭阻
Page 143 and 144:
巨量銅的電化學電鍍
Page 145 and 146:
銅、鉭和氮化鉭的 CMP
Page 147 and 148:
自旋塗佈介電質 (SOD)
Page 149 and 150:
PECVD 沉積 SiC- 蝕刻停止
Page 151 and 152:
PE-TEOS 覆蓋層 (Cap) 沉積SO
Page 153 and 154:
光罩 12- 金屬溝槽 2
Page 155 and 156:
Page 157 and 158:
剝除光阻SiCSODSOD銅 1 銅 1
Page 159 and 160:
Page 161 and 162:
Page 163 and 164:
剝除光阻SODSODSOD銅 1 銅 1
Page 165 and 166:
PVD 沉積鉭和氮化鉭阻
Page 167 and 168:
巨量銅的電化學電鍍
Page 169 and 170:
銅、鉭和氮化鉭的 CMP
Page 171 and 172:
PECVD 沉積 SiC- 蝕刻停止
Page 173 and 174:
Page 175 and 176:
Page 177 and 178:
剝除光阻SOD銅 2SODSOD銅 1
Page 179 and 180:
光阻塗佈與烘烤SODSOD
Page 181 and 182:
對準和曝光SODSOD銅 2SODSO
Page 183 and 184:
介電質蝕刻SODSOD銅 2SODSO
Page 185 and 186:
氫電漿清潔SODSOD銅 2SODSO
Page 187 and 188:
SiC、 SOD、 SiC、 SOD、和 PE-
Page 189 and 190:
蝕刻金屬層接觸窗孔
Page 191 and 192:
光阻塗佈、對準和曝
Page 193 and 194:
剝除光阻SODSOD銅 3 SOD 銅
Page 195 and 196:
銅、鉭和氮化鉭的沉
Page 197 and 198:
光阻塗佈、對準及曝
Page 199 and 200:
剝除光阻SODSODSOD銅 4SOD銅
Page 201 and 202:
介電質蝕刻SODSODSOD銅 4SO
Page 203 and 204:
氫電漿清潔SODSODSOD銅 4SO
Page 205 and 206:
PECVD 沉積氮化矽、 PSG
Page 207 and 208:
鈍化護層蝕刻氮化矽P
Page 209 and 210:
聚醯胺膜塗佈聚醯胺
Page 211 and 212:
剝除聚醯胺膜氮化矽P
Page 213 and 214:
鉻、銅、和金襯裡層
Page 215 and 216:
光阻塗佈、對準及曝
Page 217 and 218:
剝除光阻鉛 - 錫合金氮
Page 219:
矽覆蓋絕緣技術CMOS IC
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