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平坦化的定義部分平坦化全區平坦
平坦化的程度平坦化 R(µm) θ表面平滑 0.1 至 2.0 > 30 。區域性平坦 2.0 至 100 30 。至 0.5 。全區性平坦 > 100 < 0.5 。Rθ
Page 1 and 2: 半導體製程技術Introduc
Page 3: 平坦化的定義• 平坦
Page 7 and 8: CMP 的必要性• 微影技
Page 9 and 10: CMP 的優點• CMP 有效的
Page 11 and 12: CMP 的應用• 使用兩個
Page 13 and 14: CMP 後清洗• CMP 後清洗
Page 15 and 16: 粒子移除機制酸性溶
Page 17 and 18: Integration Technology尖端先
Page 19 and 20: 鉛錫合 - 金氮化矽PSG尖
Page 21 and 22: 高電流氧離子佈植氧
Page 23 and 24: 晶圓清洗深埋 SiO 2 層P
Page 25 and 26: 晶圓清洗P 型磊晶層深
Page 27 and 28: 光阻塗佈與烘烤光阻P
Page 29 and 30: 曝光光阻P 型磊晶層深
Page 31 and 32: 蝕刻氧化層 , 蝕刻矽
Page 33 and 34: 剝除屏蔽氧化層P 型
Page 35 and 36: 氧化 - 襯墊氧化層P 型
Page 37 and 38: 光阻塗佈與烘烤光阻
Page 39 and 40: 對準和曝光光阻氮化
Page 41 and 42: 蝕刻氮化矽和襯墊氧
Page 43 and 44: 蝕刻矽氮化矽深埋 SiO 2
Page 45 and 46: 氧化 - 阻擋氧化層氮
Page 47 and 48: 化學機械研磨 (CMP) USG
Page 49 and 50: 剝除襯墊氧化層STIP 型
Page 51 and 52: 氧化 - 犧牲氧化層STIP
Page 53 and 54: 光罩 2: N- 型井區
Page 55 and 56:
曝光後烘烤 - 顯影和
Page 57 and 58:
PMOS V T 調整佈植硼離子
Page 59 and 60:
光阻塗佈與烘烤光阻S
Page 61 and 62:
對準和曝光光阻STI深
Page 63 and 64:
P- 型井區佈植硼離子 ,
Page 65 and 66:
剝除光阻STIP 型井區深
Page 67 and 68:
晶圓清洗STIP 型井區深
Page 69 and 70:
LPCVD 沉積非晶矽閘極
Page 71 and 72:
光罩 4- 閘極和局部連
Page 73 and 74:
曝光後烘烤 , 顯影和
Page 75 and 76:
剝除光阻非晶矽STIP 型
Page 77 and 78:
多晶矽退火和氧化多
Page 79 and 80:
光罩 5- NMOS LDD 佈植
Page 81 and 82:
Page 83 and 84:
Page 85 and 86:
光罩 6: PMOS LDD 佈植
Page 87 and 88:
Page 89 and 90:
Page 91 and 92:
氮化矽和 USG 回蝕刻 (Et
Page 93 and 94:
光罩 7- NMOS S/D 佈植
Page 95 and 96:
Page 97 and 98:
剝除光阻STIn + n +P 型井
Page 99 and 100:
光罩 8- PMOS S/D 佈植
Page 101 and 102:
Page 103 and 104:
剝除光阻STIn + n + USG p + p
Page 105 and 106:
氬離子濺射蝕刻STIn + n
Page 107 and 108:
快速加熱退火氮化鈦
Page 109 and 110:
PECVD 沉積氮化矽鈷矽
Page 111 and 112:
CMP 摻磷矽玻璃 ( PSG)STIPS
Page 113 and 114:
光罩 9- 接觸窗及局部
Page 115 and 116:
Page 117 and 118:
剝除光阻STIPSGn + n + USG p
Page 119 and 120:
鈦和氮化鈦濺鍍沉積
Page 121 and 122:
鎢、氮化鈦和鈦 CMPSTI
Page 123 and 124:
自旋塗佈介電質 (SOD)
Page 125 and 126:
PECVD 沉積 SiC 蝕刻停止
Page 127 and 128:
沉積 PE-TEOS 覆蓋層SODSODST
Page 129 and 130:
光罩 10- 金屬層接觸窗
Page 131 and 132:
Page 133 and 134:
剝除光阻SODSODSTI鎢鎢PSGn
Page 135 and 136:
光罩 11- 金屬溝槽 1
Page 137 and 138:
Page 139 and 140:
剝除光阻SODSODSTI鎢鎢PSGn
Page 141 and 142:
PVD 沉積鉭和氮化鉭阻
Page 143 and 144:
巨量銅的電化學電鍍
Page 145 and 146:
銅、鉭和氮化鉭的 CMP
Page 147 and 148:
自旋塗佈介電質 (SOD)
Page 149 and 150:
PECVD 沉積 SiC- 蝕刻停止
Page 151 and 152:
PE-TEOS 覆蓋層 (Cap) 沉積SO
Page 153 and 154:
光罩 12- 金屬溝槽 2
Page 155 and 156:
Page 157 and 158:
剝除光阻SiCSODSOD銅 1 銅 1
Page 159 and 160:
Page 161 and 162:
Page 163 and 164:
剝除光阻SODSODSOD銅 1 銅 1
Page 165 and 166:
PVD 沉積鉭和氮化鉭阻
Page 167 and 168:
巨量銅的電化學電鍍
Page 169 and 170:
銅、鉭和氮化鉭的 CMP
Page 171 and 172:
PECVD 沉積 SiC- 蝕刻停止
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Page 175 and 176:
Page 177 and 178:
剝除光阻SOD銅 2SODSOD銅 1
Page 179 and 180:
光阻塗佈與烘烤SODSOD
Page 181 and 182:
對準和曝光SODSOD銅 2SODSO
Page 183 and 184:
介電質蝕刻SODSOD銅 2SODSO
Page 185 and 186:
氫電漿清潔SODSOD銅 2SODSO
Page 187 and 188:
SiC、 SOD、 SiC、 SOD、和 PE-
Page 189 and 190:
蝕刻金屬層接觸窗孔
Page 191 and 192:
光阻塗佈、對準和曝
Page 193 and 194:
剝除光阻SODSOD銅 3 SOD 銅
Page 195 and 196:
銅、鉭和氮化鉭的沉
Page 197 and 198:
光阻塗佈、對準及曝
Page 199 and 200:
剝除光阻SODSODSOD銅 4SOD銅
Page 201 and 202:
介電質蝕刻SODSODSOD銅 4SO
Page 203 and 204:
氫電漿清潔SODSODSOD銅 4SO
Page 205 and 206:
PECVD 沉積氮化矽、 PSG
Page 207 and 208:
鈍化護層蝕刻氮化矽P
Page 209 and 210:
聚醯胺膜塗佈聚醯胺
Page 211 and 212:
剝除聚醯胺膜氮化矽P
Page 213 and 214:
鉻、銅、和金襯裡層
Page 215 and 216:
光阻塗佈、對準及曝
Page 217 and 218:
剝除光阻鉛 - 錫合金氮
Page 219:
矽覆蓋絕緣技術CMOS IC
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