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鉛 - 錫合金再流動鉛 - 錫合金氮化矽PSG銅 5SODSOD
矽覆蓋絕緣技術CMOS IC使用銅與低 -k 連線鉻 , 銅 , 及金襯裡碳化矽蝕刻停止層銅 5SOD鉛 - 錫 -合金銅 4SODSODSOD氮化矽PSG銅 3 SOD 銅 3SOD氮化矽密封層Ta/TaN 阻擋層鈷矽化物多晶矽匣極Cu 銅 1 Cu 銅 1 SOD Cu 銅 1 Cu 銅 1STI銅 2SODSODSOD鎢鎢PSGn + n +P- 型井區 USG p + N- 型井區p + USG深埋 SiO 2 層P- 型晶圓碳化矽密封層PE-TEOS 覆蓋層碳化矽密封層氮化矽阻擋層
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半導體製程技術Introduc
Page 3 and 4:
平坦化的定義• 平坦
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平坦化的程度平坦化
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CMP 的必要性• 微影技
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CMP 的優點• CMP 有效的
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CMP 的應用• 使用兩個
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CMP 後清洗• CMP 後清洗
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粒子移除機制酸性溶
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Integration Technology尖端先
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鉛錫合 - 金氮化矽PSG尖
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高電流氧離子佈植氧
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晶圓清洗深埋 SiO 2 層P
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晶圓清洗P 型磊晶層深
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光阻塗佈與烘烤光阻P
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曝光光阻P 型磊晶層深
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蝕刻氧化層 , 蝕刻矽
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剝除屏蔽氧化層P 型
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氧化 - 襯墊氧化層P 型
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光阻塗佈與烘烤光阻
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對準和曝光光阻氮化
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蝕刻氮化矽和襯墊氧
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蝕刻矽氮化矽深埋 SiO 2
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氧化 - 阻擋氧化層氮
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化學機械研磨 (CMP) USG
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剝除襯墊氧化層STIP 型
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氧化 - 犧牲氧化層STIP
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光罩 2: N- 型井區
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曝光後烘烤 - 顯影和
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PMOS V T 調整佈植硼離子
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光阻塗佈與烘烤光阻S
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對準和曝光光阻STI深
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P- 型井區佈植硼離子 ,
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剝除光阻STIP 型井區深
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晶圓清洗STIP 型井區深
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LPCVD 沉積非晶矽閘極
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光罩 4- 閘極和局部連
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曝光後烘烤 , 顯影和
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剝除光阻非晶矽STIP 型
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多晶矽退火和氧化多
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光罩 5- NMOS LDD 佈植
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光罩 6: PMOS LDD 佈植
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氮化矽和 USG 回蝕刻 (Et
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光罩 7- NMOS S/D 佈植
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剝除光阻STIn + n +P 型井
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光罩 8- PMOS S/D 佈植
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剝除光阻STIn + n + USG p + p
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氬離子濺射蝕刻STIn + n
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快速加熱退火氮化鈦
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PECVD 沉積氮化矽鈷矽
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CMP 摻磷矽玻璃 ( PSG)STIPS
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光罩 9- 接觸窗及局部
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剝除光阻STIPSGn + n + USG p
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鈦和氮化鈦濺鍍沉積
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鎢、氮化鈦和鈦 CMPSTI
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自旋塗佈介電質 (SOD)
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PECVD 沉積 SiC 蝕刻停止
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沉積 PE-TEOS 覆蓋層SODSODST
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光罩 10- 金屬層接觸窗
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剝除光阻SODSODSTI鎢鎢PSGn
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光罩 11- 金屬溝槽 1
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剝除光阻SODSODSTI鎢鎢PSGn
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PVD 沉積鉭和氮化鉭阻
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巨量銅的電化學電鍍
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銅、鉭和氮化鉭的 CMP
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自旋塗佈介電質 (SOD)
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PECVD 沉積 SiC- 蝕刻停止
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PE-TEOS 覆蓋層 (Cap) 沉積SO
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光罩 12- 金屬溝槽 2
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剝除光阻SiCSODSOD銅 1 銅 1
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光罩 13- 金屬層接觸窗
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剝除光阻SODSODSOD銅 1 銅 1
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PVD 沉積鉭和氮化鉭阻
Page 167 and 168: 巨量銅的電化學電鍍
Page 169 and 170: 銅、鉭和氮化鉭的 CMP
Page 171 and 172: PECVD 沉積 SiC- 蝕刻停止
Page 173 and 174: 光罩 14- 金屬層接觸窗
Page 175 and 176: 曝光後烘烤 - 顯影和
Page 177 and 178: 剝除光阻SOD銅 2SODSOD銅 1
Page 179 and 180: 光阻塗佈與烘烤SODSOD
Page 181 and 182: 對準和曝光SODSOD銅 2SODSO
Page 183 and 184: 介電質蝕刻SODSOD銅 2SODSO
Page 185 and 186: 氫電漿清潔SODSOD銅 2SODSO
Page 187 and 188: SiC、 SOD、 SiC、 SOD、和 PE-
Page 189 and 190: 蝕刻金屬層接觸窗孔
Page 191 and 192: 光阻塗佈、對準和曝
Page 193 and 194: 剝除光阻SODSOD銅 3 SOD 銅
Page 195 and 196: 銅、鉭和氮化鉭的沉
Page 197 and 198: 光阻塗佈、對準及曝
Page 199 and 200: 剝除光阻SODSODSOD銅 4SOD銅
Page 201 and 202: 介電質蝕刻SODSODSOD銅 4SO
Page 203 and 204: 氫電漿清潔SODSODSOD銅 4SO
Page 205 and 206: PECVD 沉積氮化矽、 PSG
Page 207 and 208: 鈍化護層蝕刻氮化矽P
Page 209 and 210: 聚醯胺膜塗佈聚醯胺
Page 211 and 212: 剝除聚醯胺膜氮化矽P
Page 213 and 214: 鉻、銅、和金襯裡層
Page 215 and 216: 光阻塗佈、對準及曝
Page 217: 剝除光阻鉛 - 錫合金氮
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