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PVD 沉積銅種晶層SODSODSOD銅 1 銅 1 SOD 銅 1 銅 1STI鎢鎢PSGn + n + USG p + p + USGP 型井區深埋 SiO 2 層P 型晶圓N 型井區
巨量銅的電化學電鍍沉積銅 2SODSOD銅 1 銅 1 SOD 銅 1 銅 1SODSTI鎢鎢PSGn + n + USG p + p + USGP 型井區深埋 SiO 2 層P 型晶圓N 型井區
Page 1 and 2:
半導體製程技術Introduc
Page 3 and 4:
平坦化的定義• 平坦
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平坦化的程度平坦化
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CMP 的必要性• 微影技
Page 9 and 10:
CMP 的優點• CMP 有效的
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CMP 的應用• 使用兩個
Page 13 and 14:
CMP 後清洗• CMP 後清洗
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粒子移除機制酸性溶
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Integration Technology尖端先
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鉛錫合 - 金氮化矽PSG尖
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高電流氧離子佈植氧
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晶圓清洗深埋 SiO 2 層P
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晶圓清洗P 型磊晶層深
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光阻塗佈與烘烤光阻P
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曝光光阻P 型磊晶層深
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蝕刻氧化層 , 蝕刻矽
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剝除屏蔽氧化層P 型
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氧化 - 襯墊氧化層P 型
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光阻塗佈與烘烤光阻
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對準和曝光光阻氮化
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蝕刻氮化矽和襯墊氧
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蝕刻矽氮化矽深埋 SiO 2
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氧化 - 阻擋氧化層氮
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化學機械研磨 (CMP) USG
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剝除襯墊氧化層STIP 型
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氧化 - 犧牲氧化層STIP
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光罩 2: N- 型井區
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曝光後烘烤 - 顯影和
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PMOS V T 調整佈植硼離子
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光阻塗佈與烘烤光阻S
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對準和曝光光阻STI深
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P- 型井區佈植硼離子 ,
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剝除光阻STIP 型井區深
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晶圓清洗STIP 型井區深
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LPCVD 沉積非晶矽閘極
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光罩 4- 閘極和局部連
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曝光後烘烤 , 顯影和
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剝除光阻非晶矽STIP 型
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多晶矽退火和氧化多
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光罩 5- NMOS LDD 佈植
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Page 83 and 84:
Page 85 and 86:
光罩 6: PMOS LDD 佈植
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Page 89 and 90:
Page 91 and 92:
氮化矽和 USG 回蝕刻 (Et
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光罩 7- NMOS S/D 佈植
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Page 97 and 98:
剝除光阻STIn + n +P 型井
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光罩 8- PMOS S/D 佈植
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Page 103 and 104:
剝除光阻STIn + n + USG p + p
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氬離子濺射蝕刻STIn + n
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快速加熱退火氮化鈦
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PECVD 沉積氮化矽鈷矽
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CMP 摻磷矽玻璃 ( PSG)STIPS
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光罩 9- 接觸窗及局部
Page 115 and 116: 曝光後烘烤 - 顯影和
Page 117 and 118: 剝除光阻STIPSGn + n + USG p
Page 119 and 120: 鈦和氮化鈦濺鍍沉積
Page 121 and 122: 鎢、氮化鈦和鈦 CMPSTI
Page 123 and 124: 自旋塗佈介電質 (SOD)
Page 125 and 126: PECVD 沉積 SiC 蝕刻停止
Page 127 and 128: 沉積 PE-TEOS 覆蓋層SODSODST
Page 129 and 130: 光罩 10- 金屬層接觸窗
Page 133 and 134: 剝除光阻SODSODSTI鎢鎢PSGn
Page 135 and 136: 光罩 11- 金屬溝槽 1
Page 139 and 140: 剝除光阻SODSODSTI鎢鎢PSGn
Page 141 and 142: PVD 沉積鉭和氮化鉭阻
Page 143 and 144: 巨量銅的電化學電鍍
Page 145 and 146: 銅、鉭和氮化鉭的 CMP
Page 147 and 148: 自旋塗佈介電質 (SOD)
Page 149 and 150: PECVD 沉積 SiC- 蝕刻停止
Page 151 and 152: PE-TEOS 覆蓋層 (Cap) 沉積SO
Page 153 and 154: 光罩 12- 金屬溝槽 2
Page 157 and 158: 剝除光阻SiCSODSOD銅 1 銅 1
Page 163 and 164: 剝除光阻SODSODSOD銅 1 銅 1
Page 165: PVD 沉積鉭和氮化鉭阻
Page 169 and 170: 銅、鉭和氮化鉭的 CMP
Page 171 and 172: PECVD 沉積 SiC- 蝕刻停止
Page 177 and 178: 剝除光阻SOD銅 2SODSOD銅 1
Page 179 and 180: 光阻塗佈與烘烤SODSOD
Page 181 and 182: 對準和曝光SODSOD銅 2SODSO
Page 183 and 184: 介電質蝕刻SODSOD銅 2SODSO
Page 185 and 186: 氫電漿清潔SODSOD銅 2SODSO
Page 187 and 188: SiC、 SOD、 SiC、 SOD、和 PE-
Page 189 and 190: 蝕刻金屬層接觸窗孔
Page 191 and 192: 光阻塗佈、對準和曝
Page 193 and 194: 剝除光阻SODSOD銅 3 SOD 銅
Page 195 and 196: 銅、鉭和氮化鉭的沉
Page 197 and 198: 光阻塗佈、對準及曝
Page 199 and 200: 剝除光阻SODSODSOD銅 4SOD銅
Page 201 and 202: 介電質蝕刻SODSODSOD銅 4SO
Page 203 and 204: 氫電漿清潔SODSODSOD銅 4SO
Page 205 and 206: PECVD 沉積氮化矽、 PSG
Page 207 and 208: 鈍化護層蝕刻氮化矽P
Page 209 and 210: 聚醯胺膜塗佈聚醯胺
Page 211 and 212: 剝除聚醯胺膜氮化矽P
Page 213 and 214: 鉻、銅、和金襯裡層
Page 215 and 216: 光阻塗佈、對準及曝
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剝除光阻鉛 - 錫合金氮
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矽覆蓋絕緣技術CMOS IC
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