Production of Polysilicon using a Modified Siemens Process
Production of Polysilicon using a Modified Siemens Process
Production of Polysilicon using a Modified Siemens Process
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CHEMCAD 6.0.1 Page 20<br />
Job Name: Systems Final Project Impurities Date: 05/12/2011 Time: 02:29:15<br />
FLOW SUMMARIES<br />
Stream No. 29 30 31 32<br />
Stream Name<br />
Temp K 189.0152 301.2649 307.3381 196.5361<br />
Pres bar 1.0000 1.0000 1.0000 1.0000<br />
Enth kW -188.52 -8.6615 -1905.1 -713.46<br />
Vapor mole fraction 0.00000 0.00000 0.00000 0.00000<br />
Total kmol/h 6.0443 0.0612 12.5542 9.4134<br />
Flowrates in kmol/h<br />
Hydrogen 0.0000 0.0000 0.0000 0.0000<br />
Dichlorosilane 0.0149 0.0000 0.0000 0.1490<br />
Trichlorosilane 0.0002 0.0535 10.6565 2.5497<br />
Silicon TetraCl 0.0000 0.0000 1.8900 0.6855<br />
Hydrogen Chlorid 6.0292 0.0000 0.0000 6.0292<br />
Silicon 0.0000 0.0000 0.0000 0.0000<br />
Water 0.0000 0.0000 0.0000 0.0000<br />
Silicon Dioxide 0.0000 0.0000 0.0000 0.0000<br />
Boron Trichlorid 0.0000 0.0077 0.0000 0.0000<br />
Phosphoric Chlor 0.0000 0.0000 0.0077 0.0000<br />
Stream No. 33 34 35<br />
Stream Name<br />
Temp K 270.4577 330.7219 307.1727<br />
Pres bar 1.0000 1.0000 1.0000<br />
Enth kW -1962.0 -23.338 -1881.8<br />
Vapor mole fraction 0.85347 0.00000 0.00000<br />
Total kmol/h 38.0988 0.1255 12.4287<br />
Flowrates in kmol/h<br />
Hydrogen 24.4900 0.0000 0.0000<br />
Dichlorosilane 0.1341 0.0000 0.0000<br />
Trichlorosilane 12.7702 0.0001 10.6563<br />
Silicon TetraCl 0.7045 0.1177 1.7723<br />
Hydrogen Chlorid 0.0000 0.0000 0.0000<br />
Silicon 0.0000 0.0000 0.0000<br />
Water 0.0000 0.0000 0.0000<br />
Silicon Dioxide 0.0000 0.0000 0.0000<br />
Boron Trichlorid 0.0000 0.0000 0.0000<br />
Phosphoric Chlor 0.0000 0.0077 0.0000
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