Annex I - VERTIC

▼M2
6A005 (continued)
d. Other ‘lasers’, not specified in 6A005.a., 6A005.b. or 6A005.c.
as follows:
1. Semiconductor ‘lasers’ as follows:
Note 1: 6A005.d.1. includes semiconductor ‘lasers’ having
optical output connectors (e.g. fibre optic pigtails).
Note 2: The control status of semiconductor ‘lasers’
specially designed for other equipment is
determined by the control status of the other
equipment.
a. Individual single-transverse mode semiconductor ‘lasers’
having any of the following:
1. Wavelength equal to or less than 1 510 nm and
average or CW output power, exceeding 1,5 W; or
2. Wavelength greater than 1 510 nm and average or
CW output power, exceeding 500 mW;
b. Individual, multiple-transverse mode semiconductor
‘lasers’ having any of the following:
1. Wavelength of less than 1 400 nm and average or CW
output power, exceeding 15 W;
2. Wavelength equal to or greater than 1 400 nm and
less than 1 900 nm and average or CW output
power, exceeding 2,5 W; or
3. Wavelength equal to or greater than 1 900 nm and
average or CW output power, exceeding 1 W;
c. Individual semiconductor ‘laser’ ‘bars’, having any of the
following:
1. Wavelength of less than 1 400 nm and average or CW
output power, exceeding 100 W;
2. Wavelength equal to or greater than 1 400 nm and
less than 1 900 nm and average or CW output
power, exceeding 25 W; or
3. Wavelength equal to or greater than 1 900 nm and
average or CW output power, exceeding 10 W;
d. Semiconductor ‘laser’ ‘stacked arrays’ (two-dimensional
arrays) having any of the following:
1. Wavelength less than 1 400 nm and having any of the
following:
a. Average or CW total output power less than 3 kW
and having average or CW output ‘power density’
greater than 500 W/cm 2 ;
b. Average or CW total output power equal to or
exceeding 3 kW but less than or equal to 5 kW,
and having average or CW output ‘power density’
greater than 350 W/cm 2 ;
2009R0428 — EN — 15.06.2012 — 002.001 — 233