Annex I - VERTIC

▼M2
6A005 d. 1. e. 2. (continued)
Note 2: ‘Stacked arrays’, formed by combining semiconductor
‘laser’ ‘stacked arrays’ specified
by 6A005.d.1.e., that are designed to be
further combined or modified are specified
by 6A005.d.1.e.
Note 3: 6A005.d.1.e. does not apply to modular
assemblies of single ‘bars’ designed to be
fabricated into end-to-end stacked linear
arrays.
Technical Notes:
1. Semiconductor ‘lasers’ are commonly called ‘laser’
diodes.
2. A ‘bar’ (also called a semiconductor ‘laser’ ‘bar’, a
‘laser’ diode ‘bar’ or diode ‘bar’) consists of multiple
semiconductor ‘lasers’ in a one-dimensional array.
3. A ‘stacked array’ consists of multiple ‘bars’ forming a
two-dimensional array of semiconductor ‘lasers’.
2. Carbon monoxide (CO) ‘lasers’ having any of the following:
a. Output energy exceeding 2 J per pulse and ‘peak power’
exceeding 5 kW; or
b. Average or CW output power exceeding 5 kW;
3. Carbon dioxide (CO 2 ) ‘lasers’ having any of the following:
a. CW output power exceeding 15 kW;
b. Pulsed output with a ‘pulse duration’ exceeding 10 μs
and any of the following:
1. ‘Average output power’ exceeding 10 kW; or
2. ‘Peak power’ exceeding 100 kW; or
c. Pulsed output with a ‘pulse duration’ equal to or less
than 10 μs and any of the following:
1. Pulse energy exceeding 5 J per pulse; or
2. ‘Average output power’ exceeding 2,5 kW;
4. Excimer ‘lasers’ having any of the following:
a. Output wavelength not exceeding 150 nm and any of the
following:
1. Output energy exceeding 50 mJ per pulse; or
2. ‘Average output power’ exceeding 1 W;
b. Output wavelength exceeding 150 nm but not exceeding
190 nm and any of the following:
1. Output energy exceeding 1,5 J per pulse; or
2009R0428 — EN — 15.06.2012 — 002.001 — 235