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shot noise in mesoscopic conductors - Low Temperature Laboratory

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where the quantity is expressed through the isotropic part of the average distribution function fM ,<br />

(r)" dEfM (r, E)[1!fM (r, E)] . (220)<br />

The distribution fM obeys the equation<br />

DfM (r, E)#IM [ fM !ln ) fM ]"0 . (221)<br />

The standard boundary conditions for the distribution function are the follow<strong>in</strong>g. Let ¸ denote<br />

the area of contact n (14n4N), and the rest of the surface of the sample. At contact n, the<br />

non-equilibrium distribution function fM is determ<strong>in</strong>ed by the equilibrium Fermi distribution<br />

function <strong>in</strong> the reservoir n, fM "f (E), whereas away from the contacts the current perpendicular<br />

to the surface must vanish and thus N ) fM "0, where N is the outward normal to the surface.<br />

Eqs. (218) and (219) can be used to "nd the current}current #uctuations if the non-equilibrium<br />

carrier distribution is known. Thus we proceed "rst to "nd the non-equilibrium distribution<br />

function, solv<strong>in</strong>g Eq. (221). We follow then Ref. [114] and "nd the characteristic potentials ,<br />

which on the ensemble average obey the Poisson equation "0, with the boundary conditions<br />

" , N ) "0 .<br />

In terms of the characteristic potentials the electrostatic potential is [136]<br />

(r)" (r)< ,<br />

<br />

<br />

where < is the voltage applied to the reservoir n. Note that (r)"1 at every space po<strong>in</strong>t as<br />

<br />

a consequence of the <strong>in</strong>variance of the electrical properties of the conductor under an arbitrary<br />

overall voltage shift. With the help of the characteristic potentials, the conductance matrix (which<br />

we, as before, de"ne as I "G < , I be<strong>in</strong>g the current through ¸ directed <strong>in</strong>to the sample), we<br />

<br />

obta<strong>in</strong><br />

G " dr <br />

Ya.M. Blanter, M. Bu( ttiker / Physics Reports 336 (2000) 1}166 117<br />

(the <strong>in</strong>tegration is carried out over the whole sample). The conductances are <strong>in</strong>dependent of the<br />

electrical (non-equilibrium) potential <strong>in</strong>side the conductor. To see this one can rewrite Eq. (222) <strong>in</strong><br />

terms of a surface <strong>in</strong>tegral.<br />

For an arbitrary conductor the electrostatic potential can be expanded as (r)" (r)< ; Ref. [136] calls the<br />

<br />

coe$cients characteristic potentials. We remark that <strong>in</strong> the absence of <strong>in</strong>elastic processes, the average distribution<br />

<br />

function can be written as a l<strong>in</strong>ear comb<strong>in</strong>ation of the equilibrium reservoir functions f , fM (r)"<br />

(r) f . Refs.<br />

<br />

[110,111] call the coe$cients <strong>in</strong>jectivities. In the di!usive metallic conductor of <strong>in</strong>terest here the characteristic<br />

<br />

potentials and <strong>in</strong>jectivities are the same functions up to a factor given by the local density of states . Such an<br />

<br />

equivalence does not hold, for <strong>in</strong>stance, <strong>in</strong> systems composed of di!erent metallic di!usive <strong>conductors</strong>, and <strong>in</strong> general the<br />

characteristic potentials and <strong>in</strong>jectivities may have a quite di!erent functional form. Here the use of the characteristic<br />

potentials has the advantage that it takes e!ectively the local charge neutrality <strong>in</strong>to account.<br />

(222)

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