shot noise in mesoscopic conductors - Low Temperature Laboratory
shot noise in mesoscopic conductors - Low Temperature Laboratory
shot noise in mesoscopic conductors - Low Temperature Laboratory
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Ya.M. Blanter, M. Bu( ttiker / Physics Reports 336 (2000) 1}166 57<br />
Fig. 16. Examples of four-term<strong>in</strong>al disordered <strong>conductors</strong>. Disordered area is shaded. Dashed l<strong>in</strong>e denotes di!usive<br />
motion between its ends.<br />
found <strong>in</strong> Refs. [78,114]. Two speci"c geometries have been <strong>in</strong>vestigated: the disordered box<br />
(Fig. 16a) and the disordered cross (Fig. 16b). For the box, the exchange correction S is negative,<br />
i.e. exchange suppresses <strong>noise</strong> (S (S #S ). The e!ect is quite considerable: The correction is of<br />
<br />
the same order of magnitude as the classical contributions <strong>in</strong> S and S , and is suppressed only by<br />
<br />
a numerical factor. For the cross, the exchange contribution is positive } exchange enhances <strong>noise</strong><br />
} but the magnitude is by powers of l/¸ smaller than S and S . Here l and ¸ are the mean free path<br />
<br />
and the length of the disordered arms, respectively. Thus, neither sign nor magnitude of the<br />
exchange e!ects is predeterm<strong>in</strong>ed <strong>in</strong> di!usive systems: they are geometry and disorder dependent,<br />
and the only limitation is S '0.<br />
<br />
Gramespacher and one of the authors [110,111] considered a geometry of a disordered wire<br />
(along the axis z) between the contacts 1 (z"0) and 3 (z"¸), coupled locally at the po<strong>in</strong>ts z and z<br />
to the contacts 2 and 4, respectively, via high tunnel barriers (these latter can be viewed as scann<strong>in</strong>g<br />
tunnel<strong>in</strong>g microscope tips) and evaluated Eq. (109). It was found that the exchange e!ect is<br />
positive <strong>in</strong> the case, i.e. it enhances <strong>noise</strong>, irrespectively of the position of the contacts 2 and 4. For<br />
the particular case when both tunnel contacts are situated symmetrically around the center of the<br />
wire at a distance d, z"(¸!d)/2 and z"(¸#d)/2, the relative strength of the exchange term is<br />
S<br />
"<br />
S<br />
<br />
1<br />
32#d ¸ !2 d<br />
¸ <br />
,<br />
and reaches its maximum for d"¸/4. We see that the exchange e!ect <strong>in</strong> this case generally has the<br />
same order of magnitude as the classical terms S and S .<br />
<br />
Chaotic cavities. A similar problem <strong>in</strong> chaotic cavities was addressed <strong>in</strong> Ref. [115] (see also<br />
Ref. [116]). Similarly to disordered systems, it was discovered that exchange e!ects survive on<br />
average. An additional feature is however that the exchange e!ects <strong>in</strong> chaotic cavities are universal.<br />
Ref. [111] also considers a three-term<strong>in</strong>al structure (a (disordered) wire with a s<strong>in</strong>gle STM tip attached to it). The<br />
#uctuations of the current through the tip are <strong>in</strong> this case proportional to the local distribution function of electrons at<br />
the coupl<strong>in</strong>g po<strong>in</strong>t, see Eq. (249) below.