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shot noise in mesoscopic conductors - Low Temperature Laboratory

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140 Ya.M. Blanter, M. Bu( ttiker / Physics Reports 336 (2000) 1}166<br />

the asymmetry of the sp<strong>in</strong>-up and sp<strong>in</strong>-down propagation, and the asymmetry of the barrier,<br />

respectively. For a given sp<strong>in</strong> projection, the current is proportional to R R /(R #R ), while the<br />

<br />

<strong>shot</strong> <strong>noise</strong> is proportional to R R (R#R )/(R #R ). Here R and R must be taken for each<br />

<br />

sp<strong>in</strong> projection separately; the total current (<strong>shot</strong> <strong>noise</strong>) is then expressed as the sum of the currents<br />

(<strong>shot</strong> <strong>noise</strong>s) of sp<strong>in</strong>-up and sp<strong>in</strong>-down electrons. Evaluat<strong>in</strong>g <strong>in</strong> this way the Fano factor, we obta<strong>in</strong><br />

F "(1#)/(1#) , (259)<br />

tt<br />

which is precisely the double-barrier Fano factor (78), s<strong>in</strong>ce the Fano factors for sp<strong>in</strong>-up and<br />

sp<strong>in</strong>-down electrons are the same.<br />

Similarly, for the anti-parallel (!N!) orientation we write R "R , R "R ,<br />

t s <br />

R "R , and R "R . The Fano factor is<br />

t s <br />

1#<br />

F "<br />

ts (1#) ##<br />

1 1<br />

#<br />

(#)1#<br />

# , (260)<br />

and depends now on . In the strongly asymmetric junction, ,

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