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shot noise in mesoscopic conductors - Low Temperature Laboratory

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64 Ya.M. Blanter, M. Bu( ttiker / Physics Reports 336 (2000) 1}166<br />

scatter<strong>in</strong>g theory of electrical transport with<strong>in</strong> such a generalized scatter<strong>in</strong>g matrix approach has<br />

not been worked out. It is, however, possible to make progress even with<strong>in</strong> the scatter<strong>in</strong>g approach<br />

used so far: to treat phase break<strong>in</strong>g theoretically we often proceed by <strong>in</strong>vent<strong>in</strong>g a Hamiltonian<br />

system with many degrees of freedom while we are <strong>in</strong>terested <strong>in</strong> the behavior of only a subsystem.<br />

Similarly, it is possible to arrive at an approach which describes <strong>in</strong>elastic transitions and phase<br />

break<strong>in</strong>g by "rst consider<strong>in</strong>g a completely phase-coherent conductor with one or a cont<strong>in</strong>uum of<br />

additional voltage probes which are purely "ctitious [125,47]. The additional "ctitious voltage<br />

probes act as dephasers on the actual conductor of <strong>in</strong>terest. This approach has been widely used to<br />

<strong>in</strong>vestigate the e!ect of dephas<strong>in</strong>g on conductance. We refer the reader here only to a few early<br />

works [125}127,47]. In this subsection we illustrate the application of these ideas to <strong>noise</strong>. Other<br />

approaches, based on Green's function techniques, have also been <strong>in</strong>voked to derive results for<br />

strongly correlated systems (see Section 7). Furthermore, on the purely classical level, it proved to<br />

be rather simple to extend the #uctuat<strong>in</strong>g Boltzmann equation approach to <strong>in</strong>clude <strong>in</strong>teractions.<br />

For the results on <strong>in</strong>teraction and <strong>noise</strong> <strong>in</strong> double-barrier resonant tunnel<strong>in</strong>g structures and<br />

metallic di!usive <strong>conductors</strong> the reader is addressed to Sections 5 and 6, respectively. The<br />

approach which uses voltage probes as dephasers is <strong>in</strong>terest<strong>in</strong>g because of its conceptual clarity<br />

and because of its close relation to experiments: the e!ect of additional voltage probes can easily be<br />

tested experimentally with the help of gates which permit to switch o! or on a connection to<br />

a voltage probe (see e.g. Ref. [128]).<br />

Voltage probes as dephasers. Consider a <strong>mesoscopic</strong> conductor connected to N (real) contacts. To<br />

<strong>in</strong>troduce <strong>in</strong>elastic scatter<strong>in</strong>g, we attach a number M of purely "ctitious voltage probes to this<br />

conductor. The entire conductor with its N#M contacts is phase coherent and exhibits the <strong>noise</strong><br />

of a purely phase coherent conductor. However, elim<strong>in</strong>ation of the M "ctitious voltage probes<br />

leads to an e!ective conduction problem for which the conductance and the <strong>noise</strong> depend on<br />

<strong>in</strong>elastic scatter<strong>in</strong>g processes [19,74,129}131]. Depend<strong>in</strong>g on the properties of the "ctitious voltage<br />

probes, three di!erent types of <strong>in</strong>elastic scatter<strong>in</strong>g can be realized, which de Jong and Beenakker<br />

[90] classify as `quasi-elastic scatter<strong>in</strong>ga (phase break<strong>in</strong>g), `electron heat<strong>in</strong>ga, and `<strong>in</strong>elastic<br />

scatter<strong>in</strong>ga. Now we describe these types of probes separately. This division corresponds to the<br />

dist<strong>in</strong>ction of ( , , and . We emphasize that only a microscopic theory can give explicit<br />

expressions for these times. What the approach based on "ctitious voltage probes can do is to "nd<br />

the functional dependence of the conductance or the <strong>noise</strong> on these times.<br />

The results for <strong>in</strong>teraction e!ects <strong>in</strong> double-barrier structures seem to be well established by now.<br />

In contrast, for di!usive metallic wires with <strong>in</strong>teractions the situation is less clear. For discussion,<br />

the reader is addressed to Section 6.<br />

In this subsection, we assume that the system is charge neutral, i.e. there is no pile-up of<br />

charge. This charge neutrality is normally provided by Coulomb <strong>in</strong>teractions, which thus play an<br />

important role. If this is not the case, one can get di!erent results, like for resonant tunnel<strong>in</strong>g<br />

quantum wells with charg<strong>in</strong>g (Section 5) or quantum dots <strong>in</strong> the Coulomb blockade regime<br />

(Section 7).<br />

Inelastic scatter<strong>in</strong>g. We beg<strong>in</strong> the discussion with the strongest scatter<strong>in</strong>g processes which lead to<br />

carrier energy relaxation and consequently also energy dissipation. Physically, this may correspond<br />

to electron}phonon scatter<strong>in</strong>g. To simulate this process, we consider a two-term<strong>in</strong>al structure

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