Program and Abstract Book - SRON
Program and Abstract Book - SRON
Program and Abstract Book - SRON
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19 th International Symposium on Space Terahertz Technology<br />
P6-5<br />
Development of a Two-Pixel Integrated Heterodyne Schottky<br />
Diode Receiver at 183GHz<br />
Hui Wang 1 , Alain Maestrini 3&1 , Bertr<strong>and</strong> Thomas 2 , Gérard Beaudin 1<br />
1<br />
Observatoire de Paris, LERMA, 61 avenue de l’Observatoire, 75014 Paris, France.<br />
2<br />
Rutherford Appleton Laboratory, Chilton Didcot, Oxfordshire, OX11 0QX, UK.<br />
3<br />
Université Pierre et Marie Curie-Paris6, LISIF, 75005 Paris, France.<br />
<strong>Abstract</strong>—in planetary <strong>and</strong> atmospheric sciences large arrays of millimetre wave<br />
heterodyne receivers can offer higher mapping speed <strong>and</strong> mapping consistency while<br />
avoiding the use of cryogenic receivers. To reduce the size, the weight <strong>and</strong> the power<br />
consumption of a multi-pixel receiver it is necessary to optimize the interface between the<br />
mixers <strong>and</strong> the local oscillator unit. One solution consists in integrating in the same<br />
mechanical block a frequency multiplier <strong>and</strong> one or several mixers to create a compact subarray.<br />
In this context, this paper will describe the design of a two-pixel Schottky diodebased<br />
heterodyne receiver working at 183GHz. The receiver is the integration of two<br />
183GHz subharmonic mixers <strong>and</strong> a frequency tripler into the same mechanical block. A Y<br />
junction divider is used to split the power produced by the frequency multiplier. The mixer<br />
<strong>and</strong> the tripler chips were both optimized independently for two st<strong>and</strong>-alone circuits. The<br />
chips have been fabricated using the st<strong>and</strong>ard BES process of United Monolithic<br />
Semiconductors (UMS) in the frame of a contract with CNES <strong>and</strong> ESA. The integrated twopixel<br />
receiver is expected to work in the b<strong>and</strong> 170-195 GHz with a double side b<strong>and</strong> (DSB)<br />
conversion gain greater than -5.5dB when pumped with less than 50mW of input power at<br />
30GHz. A minimum DSB conversion gain of -4.5dB at 183 GHz is expected.<br />
The design was performed at the Laboratoire d’Etude du Rayonnement et de la Matière en<br />
Astrophysique, Observatoire de Paris in collaboration with the Rutherford Appleton<br />
Laboratory. It was supported by the Centre National d’Études Spatiales, the Centre National<br />
de la Recherche Scientifique <strong>and</strong> AB Millimetre.<br />
Fig. On-wafer photograph of the 90GHz tripler (left) <strong>and</strong> 3D model of the prototype of two-pixel<br />
integrated Schottky diodes receiver (right).<br />
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