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Program and Abstract Book - SRON

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19 th International Symposium on Space Terahertz Technology<br />

11-3<br />

Short GaAs/AlAs superlattices as THz radiation sources<br />

D.G. Paveliev, Yu.I. Koschurinov<br />

Radiophysics Department, Nizhny Novgorod State University, Russia<br />

V.M. Ustinov, A.E. Zhukov<br />

Ioffe Physico-Technical Institute,St.Petersburg,Russia<br />

F. Lewen, C. Endres<br />

I.Physikalisches Institut, Universität zu Köln, Germany<br />

A.M. Baryshev<br />

<strong>SRON</strong> Netherl<strong>and</strong>s Institute for Space Research <strong>and</strong> Kapteyn Astromomical Institute,<br />

University of Groningen, Netherl<strong>and</strong>s<br />

K.F. Renk, B.I. Stahl<br />

Institut für Angew<strong>and</strong>te Physik, Universität Regensburg, Germany<br />

Semi-conductor devices based on diodes with Schottky barrier are widely used in room<br />

temperature applications in the THz frequency range. However, application of Schottky barrier<br />

diodes in these frequencies is limited by several factors: long time of carrier passage through<br />

the barrier <strong>and</strong> relatively large specific capacity. Shorter times of the response <strong>and</strong> a smaller<br />

value of the specific capacity can be achieved by creation of the diodes on the basis of semiconductor<br />

superlattices. The superlattice for diodes (length 112 nm) with 18 periods was grown<br />

by using molecular beam technology. Each period (length 6.22 nm) has 18 monolayers GaAs<br />

<strong>and</strong> 4 monolayers AlAs, <strong>and</strong> is homogeneously doped with silicon (2×10 18 cm -3 ). The<br />

minib<strong>and</strong>width of 25 meV was sufficient to lead to minib<strong>and</strong> rather than hopping transport<br />

behaviour. For these diodes we have also minimized values of series resistance R s <strong>and</strong> parasitic<br />

capacity C par of a substrate carrying the diode. The area of the active region of the diode was<br />

less than 2х10 -8 cm 2 . Measurement results of the output power level, efficiency <strong>and</strong> output<br />

harmonics content at room temperature are shown for the devices based on the new planar<br />

superlattice diodes for input frequency ranges 10-20 GHz, 78-118 GHz <strong>and</strong> 180-240 GHz. In<br />

this report the superlattice device applications as THz radiation sources are discussed.<br />

94

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