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MISSION PLAN - PDS Small Bodies Node

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Accumulation of Radiation with Time: Radiation fluence as a function of time is<br />

generated to accommodate concerns regarding solar array design. Figure 2.3-4 shows the<br />

accumulated levels of proton and electron fluences at L+380, 1180, 1820, 2090 and 2535<br />

days. These data points correspond roughly to each of three aphelions, Wild-2 encounter<br />

and end of mission.<br />

To expedite practical applications, the complex degradation profile of solar cell<br />

performance due to the above radiation (multiple sources, wide range of energies and<br />

omni-directional) is converted and measured in terms of the equivalent damage caused by<br />

the incidence of a single 1-MeV electron on silicon cells. The equivalent damage<br />

conversion factors are different for different performance parameters: open circuit<br />

voltage (VOC or Pmax) and for short circuit current (ISC). Figure 2.3-5 shows the<br />

resulting equivalent 1-MeV electron fluence behind a coverglass of variable thickness<br />

and are given for solar cell performance parameters VOC and ISC, respectively.<br />

29

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