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Biennial Report 2005-2007 - Saha Institute of Nuclear Physics

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Condensed Matter <strong>Physics</strong> 127have been evaluated as a function <strong>of</strong> electron-phonon (e-ph) coupling strength and temperature (T).The effects <strong>of</strong> site diagonal disorder on the above properties have been investigated. The disorderis found to suppress the kinetic energy and the Drude weight, reduces the spatial extension <strong>of</strong>the polaron, and makes the large-to-small polaron crossover smoother. Increasing temperature alsoplays similar role. For strong coupling the kinetic energy arises mainly from the incoherent hoppingprocesses owing to the motion <strong>of</strong> electrons within the polaron and it is almost independent <strong>of</strong> thedisorder strength. A second order strong coupling perturbation method has also been followedconsidering an infinite lattice system to show that the above is true for the Hostein model <strong>of</strong> anysize and any dimension. For strong coupling there is almost no size dependence on the resultspresented. At higher temperatures the kinetic energy shows a 1/T dependence. From the coherentand incoherent contributions to the kinetic energy, the temperature above which the incoherentpart dominates is determined as a function <strong>of</strong> e-ph coupling strength.AN Das, S Sil†TCMP4.2.1.6 Tunneling Conductance <strong>of</strong> graphene NIS junctionsDetails <strong>of</strong> the work: We show that in contrast to conventional normal metal-insulatorsuperconductor(NIS) junctions, the tunneling conductance <strong>of</strong> a NIS junction in graphene is anoscillatory function <strong>of</strong> the effective barrier strength <strong>of</strong> the insulating region, in the limit <strong>of</strong> a thinbarrier. The amplitude <strong>of</strong> these oscillations are maximum for aligned Fermi surfaces <strong>of</strong> the normaland superconducting regions and vanishes for large Fermi surface mismatch. The zero-bias tunnelingconductance, in sharp contrast to its counterpart in conventional NIS junctions, becomesmaximum for a finite barrier strength. We also suggest experiments to test these predictions.Subhro Bhattacharjee†, K SenguptaTCMP4.2.1.7 Josephson effect in graphene SBS junctionsDetails <strong>of</strong> the work: We study Josephson effect in graphene superconductor- barrier- superconductorjunctions with short and wide barriers, which can be created using a gate voltage. We show thatthe amplitude <strong>of</strong> the Josephson current <strong>of</strong> such graphene junctions, in complete contrast to theirconventional counterparts, is an oscillatory function <strong>of</strong> the effective barrier strength. We demonstratethat this oscillatory behavior occurs due to transmission resonance <strong>of</strong> Dirac-Bogoliubov-deGennes (DBdG) quasiparticles in superconducting graphene and propose simple experiments totest our predictions.Moitri Maiti, K SenguptaTCMP4.2.1.8 Theory <strong>of</strong> Tunneling Conductance <strong>of</strong> graphene NIS junctionsDetails <strong>of</strong> the work: We calculate the tunneling conductance <strong>of</strong> a graphene normal metal-insulatorsuperconductor(NIS) junction with a barrier <strong>of</strong> thickness d and with an arbitrary voltage V 0 appliedacross the barrier region. We demonstrate that the tunneling conductance <strong>of</strong> such a NIS junction

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