Biennial Report 2005-2007 - Saha Institute of Nuclear Physics

Material Physics 167Fig.5.1.4.5. Spatial distribution of Ar atoms on the Ar ion induced Si surface ripplesThe experimentally observed compositional heterogeneity between the two faces of the ripples agreesreasonably good to the well known Monte Carlo ion simulator TRIM based theoretical calculations.DP Datta, TK ChiniSP5.1.4.6 Ion-beam-induced rippled amorphous-crystalline interface of siliconUsing grazing-incidence X-ray scattering technique the evolution of the damage profile of the transitionlayer between the ion-induced ripplelike pattern on top surface and the ripples at buriedcrystalline interface in silicon created after irradiation with 60 keV Ar + ions under 60 ◦ have beeninvestigated. The transition layer consists of a defect-rich crystalline part and a complete amorphouspart. The crystalline regions are highly strained but relaxed for low dose and high doseirradiations, respectively. The appearance of texture in both cases shows that the damage of the