LMX3160 Single Chip Radio Transceiver

Electrical Characteristics The following specifications are guaranteed over the recommended operating conditionsunless otherwise specified (Continued)Symbol Parameter Conditions Min Typ Max UnitFREQUENCY SYNTHESIZERV OSC Oscillator Sensitivity 05 10 V PPI Do-source Charge Pump Output Current V do e V P 2 I cpo e LOW (Note 4) b15 mAI Do-sink V do e V P 2 I cpo e LOW (Note 4) 15 mAI Do-source V do e V P 2 I cpo e HIGH (Note 4) b60 mAI Do-sink V do e V P 2 I cpo e HIGH (Note 4) 60 mAI Do-Tri05 s V dos V P b05T A e 25Cb10 01 10 nAV OH High-Level Output Voltage I OH eb10 mA V CC b04 VV OL Low-Level Output Voltage I OL e 10 mA 04 VV IH High-Level Input Voltage V CC b08 VV IL Low-Level Input Voltage 08 VI IN Input Current GND k V INk V CC b10 10 mAt CS Data to Clock Set Up Time See Data Input Timing 50 nst CH Data to Clock Hold Time See Data Input Timing 10 nst CWH Clock Pulse Width High See Data Input Timing 50 nst CWL Clock Pulse Width Low See Data Input Timing 50 nst ES Clock to Load Enable Set Up Time See Data Input Timing 50 nst EW Load Enable Pulse Width See Data Input Timing 50 nsDC COMPENSATION SAMPLE AND HOLD CIRCUITV OS Input Offset Voltage 3 mVV IO InputOutput Voltage Swing Centered at 15V 10 V PPR SH Sample and Hold Resistor 224 336 XD V Threshold Input Voltage Droop C hold e 2700 pF 1 10 mVmsNote 1 This includes 5 mA current sourced from the Rx V REG pin for the external receive LNA as shown in the application diagramNote 2 This includes 5 mA current sourced from the Tx V REG pin for the external transmit buffer used before the power amplifier as shown in the applicationdiagramNote 3 Measured at the output of external gain stageNote 4 See programmable modes for I cpo description6