Electronic Circuit Analysis

SYMBOLS
gb'e
Input Conductance of BJT in C.E configuration between fictitious base terminal
B' and emitter terminal E.
}
Input impedance (resistance) of BJT in 1C:E configuration
Forward short circuit current gain in C.E configuration
Reverse voltage gain in C.E. configuration
Output admittance in C.E. configuration
Base spread resistance between base terminal B and fictitious base terminal B'.
Emitter junction capacitance
Collector junction capacitance
Transconductance or Mutual conductance
KT T
Volt equivalent of temperature - = ---
e 11,600
w
co
IT
I~
Diode constant 11 = I for G e
; 11 = 2 for SI
Feedback conductance between B I
and collector terminal C
Output conductance between Collector and Emitter terminals.
Diffusion capacitance
Charge
Diffusion constant for minority carriers in Base region
constant (= 112 for abrupt junctions)
Base width
Angular frequency = 21t1
Frequency at which C.E. short circuit current gain becomes unity
Frequency at which h fe
becomes 0.707 h fe
max' Frequency range upt0lp is referred
as the B. W of the transistor circuit.