EXAMPLE 17: Full.Coupled Diffusion 312 SUPREM-IV.GS – 2D ...

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EXAMPLE 15: Annealing An Implant From Measured (SIMS) Data EXAMPLE 15 Annealing An Implant From Measured (SIMS) Data In this example, the “implanted” diffusivities are used, even though there is no implant statement. The input file for the simulation is in the “examples/exam15” directory, in the file example15.in. option quiet set echo mode one.dim line x loc=0.0 spacing=0.01 tag=top line x loc=1.0 spacing=0.01 line x loc=20 spacing=0.25 tag=bottom region gaas xlo=top xhi=bottom boundary exposed xlo=top xhi=top boundary backside xlo=bottom xhi=bottom init carbon conc=1e15 profile infile=be1 beryllium implant beryllium dose=1e1 energy=100 pearson deposit nitride thick=.3 select z=log10(beryllium) plot.1d x.min=0 x.ma=2 y.mi=14 y.max=20 line.type=4 method fermi init=1e-5 method full.fac diffuse time=15 temp=800 argon select z=log10(beryllium) plot.1d x.min=0 x.ma=2 y.mi=14 y.max=20 cle=f axi=f line.type=2 quit The as-implanted profile obtained from SIMS measurements is input from a file (“be1”) by using the profile statement: SUPREM-IV.GS – 2D Process Simulation for Si and GaAs 303
EXAMPLE 14: Grown-in and Annealed Beryllium deposit gaas thick=.5 divisions=100 beryllium conc=1e15 instead of an implant statement. In this case, SUPREM-IV.GS uses the lower “as-grown” diffusivities for beryllium since no implanted beryllium is present. The as-grown and diffused profiles are shown in Figure 5. The extent of beryllium diffusion is seen to be much less in this case compared to the implanted case (Example 13), even though the same anneal condi- tions are used and the beryllium peak concentrations are comparable (the diffusion is hole, or concentration, dependent). FIGURE 1 Grown-in and annealed beryllium in GaAs using the grown-in diffusion coefficients. 302 SUPREM-IV.GS – 2D Process Simulation for Si and GaAs
Page 1 and 2: EXAMPLE 17: Full.Coupled Diffusion
Page 3 and 4: EXAMPLE 17: Full.Coupled Diffusion
Page 5 and 6: EXAMPLE 16: Two.Dim Diffusion With
Page 7 and 8: EXAMPLE 16: Two.Dim Diffusion With
Page 9: EXAMPLE 15: Annealing An Implant Fr
Page 13 and 14: EXAMPLE 13: Implanted and Annealed
Page 15 and 16: EXAMPLE 12: Dopant Activation Model
Page 17 and 18: EXAMPLE 12: Dopant Activation Model
Page 19 and 20: EXAMPLE 11: GaAs Simulation - 2D 29
Page 21 and 22: EXAMPLE 11: GaAs Simulation - 2D im
Page 23 and 24: EXAMPLE 10: GaAs MESFET Gate Simula
Page 25 and 26: EXAMPLE 10: GaAs MESFET Gate Simula
Page 27 and 28: EXAMPLE 9: Stress Dependent Oxidati
Page 33 and 34: EXAMPLE 8: Shear Stress FIGURE 1 Cr
Page 35 and 36: EXAMPLE 8: Shear Stress line y loc=
Page 37 and 38: EXAMPLE 7: Fully Recessed Oxide Gro
Page 43 and 44: EXAMPLE 6: One Dimensional Oxide Gr
Page 45 and 46: EXAMPLE 6: One Dimensional Oxide Gr
Page 47 and 48: EXAMPLE 5: LDD Cross Section 266 SU
Page 49 and 50: EXAMPLE 5: LDD Cross Section To pre
Page 51 and 52: EXAMPLE 5: LDD Cross Section This i
Page 53 and 54: EXAMPLE 5: LDD Cross Section The ne
Page 55 and 56: EXAMPLE 5: LDD Cross Section #depos
Page 57 and 58: EXAMPLE 4: Boron OED - 2D 256 SUPRE
Page 59 and 60: EXAMPLE 4: Boron OED - 2D FIGURE 3
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EXAMPLE 4: Boron OED - 2D equal to
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EXAMPLE 4: Boron OED - 2D deposit o
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EXAMPLE 3: OED Time 248 SUPREM-IV.G
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EXAMPLE 3: OED Time %define den ${t
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EXAMPLE 3: OED Time %define tfci 0.
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EXAMPLE 2: Boron OED - 1D 242 SUPRE
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EXAMPLE 2: Boron OED - 1D than the
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EXAMPLE 2: Boron OED - 1D select z=
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EXAMPLE 1: Boron Anneal - 1D 236 SU
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EXAMPLE 1: Boron Anneal - 1D Solvin
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EXAMPLE 1: Boron Anneal - 1D The ne
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EXAMPLE 1: Boron Anneal - 1D #save
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Examples 228 SUPREM-IV.GS - 2D Proc
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ZINC 226 SUPREM-IV.GS - 2D Process
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ZINC ss.temp, ss.conc These paramet
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ZINC librium value, D V and D I are
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VACANCY promising with these models
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VACANCY vmole, theta.0, theta.E, Gp
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VACANCY Kr.0, Kr.E These floating p
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VACANCY DESCRIPTION This statement
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TRAP BUGS There are no known bugs i
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TRAP COMMAND TRAP Set coefficients
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TIN ss.temp, ss.conc These paramete
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TIN tration and the intrinsic conce
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iSILICON SEE ALSO The antimony, ars
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iSILICON ss.clear This parameter cl
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iSILICON diffusivities with vacanci
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SELENIUM selenium gaas /nitride Seg
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SELENIUM faults to 0.0 eV [1,2,3].
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SELENIUM COMMAND SELENIUM Set the c
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PHOSPHORUS Trn.0, Trn.E These param
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PHOSPHORUS Dix.0, Dix.E These float
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PHOSPHORUS COMMAND PHOSPHORUS Set t
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OXIDE erf.lbb The erf.lbb parameter
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OXIDE stress.dep, Vc, Vr, Vd, Vt, D
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OXIDE dry | wet The type of oxidati
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OXIDE COMMAND OXIDE Specify oxidati
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MATERIAL lcte This is an expression
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MATERIAL COMMAND MATERIAL Set the c
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MAGNESIUM EXAMPLES magnesium gaas i
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MAGNESIUM arsenide, and Dix.E defau
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MAGNESIUM COMMAND MAGNESIUM Set the
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INTERSTITIAL unknown dependencies o
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INTERSTITIAL terial. Once again, th
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* CI = CStar INTERSTITIAL neu.0, ne
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INTERSTITIAL where C T is the total
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INTERSTITIAL COMMAND INTERSTITIAL S
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GERMANIUM ss.temp, ss.conc These pa
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GERMANIUM tron concentration and th
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GENERIC donor, acceptor These param
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GENERIC Dimmm.0, Dimmm.E These floa
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GENERIC C T t = 150 SUPREM-IV.GS -
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CARBON EXAMPLES carbon gaas implant
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CARBON Dix.E is the activation ener
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CARBON COMMAND CARBON Set the coeff
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BORON donor, acceptor These paramet
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BORON and Dix.E defaults to 3.46 eV
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BORON COMMAND BORON Set the coeffic
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BERYLLIUM EXAMPLES beryllium gaas i
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BERYLLIUM Dix.0, Dix.E These floati
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BERYLLIUM COMMAND BERYLLIUM Set the
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ARSENIC EXAMPLES arsenic silicon Di
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ARSENIC and Dix.E defaults to 3.65
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ARSENIC COMMAND ARSENIC Set the coe
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ANTIMONY /silicon, /oxide, /oxynit,
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ANTIMONY and interstitials, and n a
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Models BUGS These commands implemen
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STRUCTURE structure imagetool=foo x
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STRUCTURE pixely This integer param
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STRUCTURE SCES (Sept. 87 version).
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STRESS BUGS The correct boundary co
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SELECT select z=(phos - 5.0e14) Cho
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SELECT ci.star equilibrium intersti
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REGION EXAMPLES region silicon xlo=
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PROFILE antimony, arsenic, boron, p
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PRINTF printf ( 15.0 * exp ( -2.0 /
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PRINT.1D EXAMPLES print.1d x.val=1.
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PRINT.1D COMMAND PRINT.1D Print val
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PLOT.2D line.grid The line.grid par
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PLOT.2D COMMAND PLOT.2D Plot a two
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PLOT.1D clear The clear parameter s
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PLOT.1D COMMAND PLOT.1D Plot a one
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OPTION COMMAND OPTION option - Set
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METHOD REFERENCES 1. M.E. Law and R
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METHOD fies the percentage of the t
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METHOD blk.itlim The maximum number
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METHOD plexity desired for the diff
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LINE BUGS It's hard to guess how ma
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LINE COMMAND LINE Specify a mesh li
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LABEL COMMAND LABEL Put labels on a
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INITIALIZE antimony, arsenic, beryl
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IMPLANT Occasionally problems are e
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IMPLANT antimony, arsenic, boron, b
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ETCH EXAMPLES etch nitride left p1.
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ETCH COMMAND ETCH Etch a layer. SYN
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ECHO COMMAND ECHO A string printer
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DIFFUSE diffuse time=30 temp=1000 d
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DIFFUSE time This parameter represe
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DEPOSIT BUGS Only uniform grid in t
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DEPOSIT COMMAND DEPOSIT Deposit a l
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CPULOG COMMAND CPULOG Log the cpu u
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CONTOUR COMMAND CONTOUR Plot contou
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BOUNDARY COMMAND BOUNDARY Specify a
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Commands plot.1d This command allow
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Commands initialization This comman
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UNSET 42 SUPREM-IV.GS - 2D Process
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UNSET COMMAND UNSET Unset various s
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SOURCE COMMAND SOURCE Execute comma
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SET COMMAND SET Set various shell p
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MAN COMMAND MAN Online help facilit
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FOR, FOREACH EXAMPLES foreach strin
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DEFINE EXAMPLES %define bounds xmin
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The SUPREM-IV.GS Shell BUGS Numeric
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The SUPREM-IV.GS Shell macro for th
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The SUPREM-IV.GS Shell executed in
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User’s Reference Manual Par1=( 4.
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User’s Reference Manual CONVENTIO
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Adding SUPREM 3.5’s GaAs Models a
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Introduction 4 SUPREM-IV.GS - 2D Pr
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Introduction and parameters. This i
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Acknowledgments vi SUPREM-IV.GS - 2
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Table of Contents iv SUPREM-IV.GS -
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Table of Contents ETCH . . . . . .
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Copyright 1993 by The Board of Trus
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EXAMPLE 17: Full.Coupled Diffusion 312 SUPREM-IV.GS – 2D ...

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