EXAMPLE 17: Full.Coupled Diffusion 312 SUPREM-IV.GS – 2D ...

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EXAMPLE 6: One Dimensional Oxide Growth 0 oxide -0.043 0.000000e+00 1 oxide 0.000 -3.104514e-04 2 oxide 0.035 0.000000e+00 3 silicon 1.000 4.993907e-01 "---------- Orientation < 110 > --------------------" estimated first time step 4.402759e-16 Solving 0 + 0.1 = 0.1, 100%,np 6 Solving 0.1 + 216.262 = 216.362, 216262%,np 6 Solving 216.362 + 216.266 = 432.629, 100.002%,np 6 Solving 432.629 + 224.785 = 657.413, 103.939%,np 6 Solving 657.413 + 232.98 = 890.393, 103.646%,np 6 Solving 890.393 + 241.199 = 1131.59, 103.528%,np 8 Solving 1131.59 + 249.427 = 1381.02, 103.411%,np 8 Solving 1381.02 + 257.664 = 1638.68, 103.302%,np 8 Solving 1638.68 + 161.318 = 1800, 62.6078%,np 10 layer material thickness Integrated num type microns Depth(A) 0 oxide -0.056 0.000000e+00 1 oxide -0.000 -1.296132e-03 2 oxide 0.046 7.714586e-04 3 silicon 1.000 4.989346e-01 "---------- Orientation < 111 > --------------------" estimated first time step 1.269085e-17 Solving 0 + 0.1 = 0.1, 100%,np 6 Solving 0.1 + 180.25 = 180.35, 180250%,np 6 Solving 180.35 + 180.255 = 360.605, 100.003%,np 6 Solving 360.605 + 188.773 = 549.378, 104.726%,np 6 Solving 549.378 + 196.907 = 746.285, 104.309%,np 6 Solving 746.285 + 205.073 = 951.358, 104.147%,np 8 Solving 951.358 + 213.252 = 1164.61, 103.988%,np 8 Solving 1164.61 + 221.444 = 1386.05, 103.841%,np 8 Solving 1386.05 + 229.647 = 1615.7, 103.704%,np 10 Solving 1615.7 + 184.3 = 1800, 80.2534%,np 10 layer material thickness Integrated num type microns Depth(A) 0 oxide -0.065 0.000000e+00 1 oxide 0.000 -1.962906e-03 2 oxide 0.053 1.281196e-03 3 silicon 1.000 4.985963e-01 SUPREM-IV.GS – 2D Process Simulation for Si and GaAs 269
EXAMPLE 6: One Dimensional Oxide Growth The loop foreach O (100 110 111) … end runs its body three times for three different orientations. The first seven lines of the loop body define the simplest mesh possible. It has exactly four lines (one rectangle), and a front side. The method command chooses the oxide grid spacing to be 0.03 m, knowing that 30 minutes at 900˚C will grow about 0.1 m of oxide. The oxidation step chooses the vertical model by default. The vertical model solves the Deal-Grove diffusion equation for oxidant, and uses the calcu- lated velocities to move the oxide vertically everywhere. For the purposes of thickness on a planar or near-planar structure, the accuracy is good enough. Grid is added automatically to the oxide as it grows, by default at increments of 0.1 m. The time step is initially 0.1second; subsequently it is automatically chosen to add no more than 14 of the grid increment per time step. When the diffusion is done, the select statement fills the “z vector” with the y (vertical) locations of the points, scaled to angstroms. The print statement then prints the y displacements along the left side of the mesh. The form parameter rounds off the thickness to the nearest angstrom. The output is: "---------- Orientation < 100 > --------------------" estimated first time step 1.286963e-16 Solving 0 + 0.1 = 0.1, 100%,np 6 Solving 0.1 + 302.52 = 302.62, 302520%,np 6 Solving 302.62 + 302.522 = 605.142, 100.001%,np 6 Solving 605.142 + 311.041 = 916.183, 102.816%,np 6 Solving 916.183 + 319.326 = 1235.51, 102.664%,np 6 Solving 1235.51 + 327.623 = 1563.13, 102.598%,np 8 Solving 1563.13 + 236.869 = 1800, 72.2992%,np 8 layer material thickness Integrated num type microns Depth(A) 268 SUPREM-IV.GS – 2D Process Simulation for Si and GaAs
Page 1 and 2: EXAMPLE 17: Full.Coupled Diffusion
Page 3 and 4: EXAMPLE 17: Full.Coupled Diffusion
Page 5 and 6: EXAMPLE 16: Two.Dim Diffusion With
Page 7 and 8: EXAMPLE 16: Two.Dim Diffusion With
Page 9 and 10: EXAMPLE 15: Annealing An Implant Fr
Page 11 and 12: EXAMPLE 14: Grown-in and Annealed B
Page 13 and 14: EXAMPLE 13: Implanted and Annealed
Page 15 and 16: EXAMPLE 12: Dopant Activation Model
Page 17 and 18: EXAMPLE 12: Dopant Activation Model
Page 19 and 20: EXAMPLE 11: GaAs Simulation - 2D 29
Page 21 and 22: EXAMPLE 11: GaAs Simulation - 2D im
Page 23 and 24: EXAMPLE 10: GaAs MESFET Gate Simula
Page 25 and 26: EXAMPLE 10: GaAs MESFET Gate Simula
Page 27 and 28: EXAMPLE 9: Stress Dependent Oxidati
Page 33 and 34: EXAMPLE 8: Shear Stress FIGURE 1 Cr
Page 35 and 36: EXAMPLE 8: Shear Stress line y loc=
Page 37 and 38: EXAMPLE 7: Fully Recessed Oxide Gro
Page 43: EXAMPLE 6: One Dimensional Oxide Gr
Page 47 and 48: EXAMPLE 5: LDD Cross Section 266 SU
Page 49 and 50: EXAMPLE 5: LDD Cross Section To pre
Page 51 and 52: EXAMPLE 5: LDD Cross Section This i
Page 53 and 54: EXAMPLE 5: LDD Cross Section The ne
Page 55 and 56: EXAMPLE 5: LDD Cross Section #depos
Page 57 and 58: EXAMPLE 4: Boron OED - 2D 256 SUPRE
Page 59 and 60: EXAMPLE 4: Boron OED - 2D FIGURE 3
Page 61 and 62: EXAMPLE 4: Boron OED - 2D equal to
Page 63 and 64: EXAMPLE 4: Boron OED - 2D deposit o
Page 65 and 66: EXAMPLE 3: OED Time 248 SUPREM-IV.G
Page 67 and 68: EXAMPLE 3: OED Time %define den ${t
Page 69 and 70: EXAMPLE 3: OED Time %define tfci 0.
Page 71 and 72: EXAMPLE 2: Boron OED - 1D 242 SUPRE
Page 73 and 74: EXAMPLE 2: Boron OED - 1D than the
Page 75 and 76: EXAMPLE 2: Boron OED - 1D select z=
Page 77 and 78: EXAMPLE 1: Boron Anneal - 1D 236 SU
Page 79 and 80: EXAMPLE 1: Boron Anneal - 1D Solvin
Page 81 and 82: EXAMPLE 1: Boron Anneal - 1D The ne
Page 83 and 84: EXAMPLE 1: Boron Anneal - 1D #save
Page 85 and 86: Examples 228 SUPREM-IV.GS - 2D Proc
Page 87 and 88: ZINC 226 SUPREM-IV.GS - 2D Process
Page 89 and 90: ZINC ss.temp, ss.conc These paramet
Page 91 and 92: ZINC librium value, D V and D I are
Page 93 and 94: VACANCY promising with these models
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VACANCY vmole, theta.0, theta.E, Gp
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VACANCY Kr.0, Kr.E These floating p
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VACANCY DESCRIPTION This statement
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TRAP BUGS There are no known bugs i
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TRAP COMMAND TRAP Set coefficients
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TIN ss.temp, ss.conc These paramete
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TIN tration and the intrinsic conce
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iSILICON SEE ALSO The antimony, ars
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iSILICON ss.clear This parameter cl
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iSILICON diffusivities with vacanci
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SELENIUM selenium gaas /nitride Seg
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SELENIUM faults to 0.0 eV [1,2,3].
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SELENIUM COMMAND SELENIUM Set the c
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PHOSPHORUS Trn.0, Trn.E These param
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PHOSPHORUS Dix.0, Dix.E These float
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PHOSPHORUS COMMAND PHOSPHORUS Set t
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OXIDE erf.lbb The erf.lbb parameter
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OXIDE stress.dep, Vc, Vr, Vd, Vt, D
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OXIDE dry | wet The type of oxidati
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OXIDE COMMAND OXIDE Specify oxidati
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MATERIAL lcte This is an expression
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MATERIAL COMMAND MATERIAL Set the c
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MAGNESIUM EXAMPLES magnesium gaas i
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MAGNESIUM arsenide, and Dix.E defau
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MAGNESIUM COMMAND MAGNESIUM Set the
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INTERSTITIAL unknown dependencies o
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INTERSTITIAL terial. Once again, th
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* CI = CStar INTERSTITIAL neu.0, ne
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INTERSTITIAL where C T is the total
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INTERSTITIAL COMMAND INTERSTITIAL S
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GERMANIUM ss.temp, ss.conc These pa
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GERMANIUM tron concentration and th
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GENERIC donor, acceptor These param
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GENERIC Dimmm.0, Dimmm.E These floa
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GENERIC C T t = 150 SUPREM-IV.GS -
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CARBON EXAMPLES carbon gaas implant
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CARBON Dix.E is the activation ener
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CARBON COMMAND CARBON Set the coeff
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BORON donor, acceptor These paramet
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BORON and Dix.E defaults to 3.46 eV
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BORON COMMAND BORON Set the coeffic
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BERYLLIUM EXAMPLES beryllium gaas i
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BERYLLIUM Dix.0, Dix.E These floati
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BERYLLIUM COMMAND BERYLLIUM Set the
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ARSENIC EXAMPLES arsenic silicon Di
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ARSENIC and Dix.E defaults to 3.65
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ARSENIC COMMAND ARSENIC Set the coe
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ANTIMONY /silicon, /oxide, /oxynit,
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ANTIMONY and interstitials, and n a
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Models BUGS These commands implemen
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STRUCTURE structure imagetool=foo x
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STRUCTURE pixely This integer param
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STRUCTURE SCES (Sept. 87 version).
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STRESS BUGS The correct boundary co
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SELECT select z=(phos - 5.0e14) Cho
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SELECT ci.star equilibrium intersti
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REGION EXAMPLES region silicon xlo=
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PROFILE antimony, arsenic, boron, p
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PRINTF printf ( 15.0 * exp ( -2.0 /
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PRINT.1D EXAMPLES print.1d x.val=1.
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PRINT.1D COMMAND PRINT.1D Print val
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PLOT.2D line.grid The line.grid par
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PLOT.2D COMMAND PLOT.2D Plot a two
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PLOT.1D clear The clear parameter s
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PLOT.1D COMMAND PLOT.1D Plot a one
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OPTION COMMAND OPTION option - Set
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METHOD REFERENCES 1. M.E. Law and R
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METHOD fies the percentage of the t
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METHOD blk.itlim The maximum number
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METHOD plexity desired for the diff
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LINE BUGS It's hard to guess how ma
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LINE COMMAND LINE Specify a mesh li
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LABEL COMMAND LABEL Put labels on a
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INITIALIZE antimony, arsenic, beryl
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IMPLANT Occasionally problems are e
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IMPLANT antimony, arsenic, boron, b
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ETCH EXAMPLES etch nitride left p1.
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ETCH COMMAND ETCH Etch a layer. SYN
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ECHO COMMAND ECHO A string printer
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DIFFUSE diffuse time=30 temp=1000 d
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DIFFUSE time This parameter represe
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DEPOSIT BUGS Only uniform grid in t
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DEPOSIT COMMAND DEPOSIT Deposit a l
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CPULOG COMMAND CPULOG Log the cpu u
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CONTOUR COMMAND CONTOUR Plot contou
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BOUNDARY COMMAND BOUNDARY Specify a
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Commands plot.1d This command allow
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Commands initialization This comman
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UNSET 42 SUPREM-IV.GS - 2D Process
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UNSET COMMAND UNSET Unset various s
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SOURCE COMMAND SOURCE Execute comma
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SET COMMAND SET Set various shell p
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MAN COMMAND MAN Online help facilit
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FOR, FOREACH EXAMPLES foreach strin
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DEFINE EXAMPLES %define bounds xmin
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The SUPREM-IV.GS Shell BUGS Numeric
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The SUPREM-IV.GS Shell macro for th
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The SUPREM-IV.GS Shell executed in
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User’s Reference Manual Par1=( 4.
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User’s Reference Manual CONVENTIO
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Adding SUPREM 3.5’s GaAs Models a
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Page 301 and 302:
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Introduction 4 SUPREM-IV.GS - 2D Pr
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Introduction and parameters. This i
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Acknowledgments vi SUPREM-IV.GS - 2
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Table of Contents iv SUPREM-IV.GS -
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Table of Contents ETCH . . . . . .
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Copyright 1993 by The Board of Trus
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EXAMPLE 17: Full.Coupled Diffusion 312 SUPREM-IV.GS – 2D ...

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