EXAMPLE 17: Full.Coupled Diffusion 312 SUPREM-IV.GS – 2D ...

EXAMPLE 7: Fully Recessed Oxide Growth
EXAMPLE 7 Fully Recessed Oxide Growth
DESCRIPTION
This example shows the evolution of an oxide profile during semi-re-
cessed oxidation. It uses the Deal-Grove model to calculate the oxide
growth rate at the silicon/oxide interface, and treats the deformation of the
oxide and nitride as viscous incompressible flow. The input file for the
simulation is in the “examples/exam7” directory, in the file “fullrox.s4”.
#Recessed LOCOS cross section: recess 0.3um, grow
0.54um
#option quiet
#------------Substrate mesh definition
line y loc=0 spac=0.05 tag=t
line y loc=0.6 spac=0.2
line y loc=1 tag=b
line x loc=-1 spac=0.2 tag=l
line x loc=-0.2 spac=0.05
line x loc=0 spac=0.05
line x loc=1 spac=0.2 tag=r
region silicon xlo=l xhi=r ylo=t yhi=b
bound expo xlo=l xhi=r ylo=t yhi=t
init or=100
#-----------Anisotropic silicon etch
etch silicon left p1.x=-0.218 p1.y=0.3 p2.x=0 p2.y=0
#----------Pad oxide and nitride mask
deposit oxide thick=0.02
deposit nitride thick=0.1
etch nitride left p1.x=0
etch oxide left p1.x=0
plot.2d grid bound
SUPREM-IV.GS – 2D Process Simulation for Si and GaAs 271