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EXAMPLE 17: Full.Coupled Diffusion 312 SUPREM-IV.GS – 2D ...

EXAMPLE 17: Full.Coupled Diffusion 312 SUPREM-IV.GS – 2D ...

EXAMPLE 17: Full.Coupled Diffusion 312 SUPREM-IV.GS – 2D ...

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<strong>EXAMPLE</strong> 6: One Dimensional Oxide Growth<br />

<strong>EXAMPLE</strong> 6 One Dimensional Oxide Growth<br />

DESCRIPTION<br />

This example compares the oxide thickness grown for different orienta-<br />

tions. The input file for the simulation is in the “examples/exam6” directo-<br />

ry, in the file “oxcalib.s4”.<br />

#---some set stuff<br />

option quiet<br />

unset echo<br />

foreach O (100 110 111)<br />

echo "---------- Orientation < O > ------------------<br />

--"<br />

#---the minimal mesh<br />

line x loc = 0.0 tag = left<br />

line x loc = 1.0 tag = right<br />

line y loc = 0.0 tag = top<br />

line y loc = 1.0 tag=bottom<br />

region silicon xlo = left xhi = right ylo = top yhi =<br />

bottom<br />

bound exposed xlo = left xhi = right ylo = top yhi =<br />

top<br />

init ori=O<br />

#---the oxidation step<br />

meth grid.ox=0.03<br />

diffuse time=30 temp=900 wet<br />

select z=y*1e8 label="Depth(A)"; print.1d x.v=0<br />

form=8.0f<br />

end<br />

The first two lines keep the program as quiet as possible. The minimum<br />

output is printed, and the input is not echoed at all.<br />

<strong>SUPREM</strong>-<strong>IV</strong>.<strong>GS</strong> <strong>–</strong> <strong>2D</strong> Process Simulation for Si and GaAs 267

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