EXAMPLE 17: Full.Coupled Diffusion 312 SUPREM-IV.GS – 2D ...

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EXAMPLE 16: Two.Dim Diffusion With File Input Interstitials is used, rather than the fermi method statement. Parameters for various interstitial and vacancy properties are also included. For example, only +1 charge state interstitials are used, according to the statements: interstitial gaas neu.0=0 pos.0=1 neu.E=0 neg.0=0 pos.E=0 dneg.0=0 interstitial gaas dpos.0=0 dpos.E=0 neg.E=0 tpos.0=0 tneg.0=0 The as-implanted and diffused profiles of beryllium and interstitials are shown in Figure 1. The diffused beryllium profile is much different than that in Example 13, where the fermi method was used (with no added interstitials). The simulation predicts the famous “uphill diffusion” of implanted p-type dopants often observed. FIGURE 1 Beryllium and interstitial profiles, before and after anneal, using the two.dim method for diffusion. The excess interstitials (above I * ) produce “uphill diffusion” of Beryllium. SUPREM-IV.GS – 2D Process Simulation for Si and GaAs 307
EXAMPLE 16: Two.Dim Diffusion With File Input Interstitials method full.fac select z=log10(beryllium) plot.1d x.min=0 x.ma=2 y.mi=14 y.max=20 line.type=4 select z=log10(inter) plot.1d x.min=0 x.ma=2 y.mi=14 y.max=20 cle=f axi=f line.type=2 method two.dim init=1e-5 diffuse time=15 temp=800 argon select z=log10(beryllium) plot.1d x.min=0 x.ma=2 y.mi=14 y.max=20 cle=f axi=f line.type=4 select z=log10(inter) plot.1d x.min=0 x.ma=2 y.mi=14 y.max=20 cle=f axi=f line.type=2 quit In Example 13, the Fermi method for diffusion was used, in which it is as- sumed that interstitial and vacancy concentrations are at their equilibrium values throughout the simulation. Therefore, the diffusivities are only dependent on temperature and the local doping concentrations (n or p). In Example 14, the two.dim method for diffusion is used, in which extrinsic interstitials or vacancies (i.e. added from some source, such as implant damage, or from oxidation in the case of silicon technology) are taken into account in the diffusion of dopants. In this case I/I* or V/V* may not equal one, and these terms are included in the diffusion equations. In this example, the interstitial profile is input by the statement: profile infile=file1 inter where file1 contains the x concentration values for the interstitials that might be caused by implantation damage. Now the statement: method two.dim init=1e-5 306 SUPREM-IV.GS – 2D Process Simulation for Si and GaAs
Page 1 and 2: EXAMPLE 17: Full.Coupled Diffusion
Page 3 and 4: EXAMPLE 17: Full.Coupled Diffusion
Page 5: EXAMPLE 16: Two.Dim Diffusion With
Page 9 and 10: EXAMPLE 15: Annealing An Implant Fr
Page 11 and 12: EXAMPLE 14: Grown-in and Annealed B
Page 13 and 14: EXAMPLE 13: Implanted and Annealed
Page 15 and 16: EXAMPLE 12: Dopant Activation Model
Page 17 and 18: EXAMPLE 12: Dopant Activation Model
Page 19 and 20: EXAMPLE 11: GaAs Simulation - 2D 29
Page 21 and 22: EXAMPLE 11: GaAs Simulation - 2D im
Page 23 and 24: EXAMPLE 10: GaAs MESFET Gate Simula
Page 25 and 26: EXAMPLE 10: GaAs MESFET Gate Simula
Page 27 and 28: EXAMPLE 9: Stress Dependent Oxidati
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EXAMPLE 4: Boron OED - 2D 256 SUPRE
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EXAMPLE 4: Boron OED - 2D FIGURE 3
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EXAMPLE 4: Boron OED - 2D equal to
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EXAMPLE 4: Boron OED - 2D deposit o
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EXAMPLE 3: OED Time 248 SUPREM-IV.G
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EXAMPLE 3: OED Time %define den ${t
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EXAMPLE 3: OED Time %define tfci 0.
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EXAMPLE 2: Boron OED - 1D 242 SUPRE
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EXAMPLE 2: Boron OED - 1D than the
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EXAMPLE 2: Boron OED - 1D select z=
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EXAMPLE 1: Boron Anneal - 1D 236 SU
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EXAMPLE 1: Boron Anneal - 1D Solvin
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EXAMPLE 1: Boron Anneal - 1D The ne
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EXAMPLE 1: Boron Anneal - 1D #save
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Examples 228 SUPREM-IV.GS - 2D Proc
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ZINC 226 SUPREM-IV.GS - 2D Process
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ZINC ss.temp, ss.conc These paramet
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ZINC librium value, D V and D I are
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VACANCY promising with these models
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VACANCY vmole, theta.0, theta.E, Gp
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VACANCY Kr.0, Kr.E These floating p
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VACANCY DESCRIPTION This statement
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TRAP BUGS There are no known bugs i
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TRAP COMMAND TRAP Set coefficients
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TIN ss.temp, ss.conc These paramete
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TIN tration and the intrinsic conce
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iSILICON SEE ALSO The antimony, ars
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iSILICON ss.clear This parameter cl
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iSILICON diffusivities with vacanci
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SELENIUM selenium gaas /nitride Seg
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SELENIUM faults to 0.0 eV [1,2,3].
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SELENIUM COMMAND SELENIUM Set the c
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PHOSPHORUS Trn.0, Trn.E These param
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PHOSPHORUS Dix.0, Dix.E These float
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PHOSPHORUS COMMAND PHOSPHORUS Set t
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OXIDE erf.lbb The erf.lbb parameter
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OXIDE stress.dep, Vc, Vr, Vd, Vt, D
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OXIDE dry | wet The type of oxidati
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OXIDE COMMAND OXIDE Specify oxidati
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MATERIAL lcte This is an expression
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MATERIAL COMMAND MATERIAL Set the c
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MAGNESIUM EXAMPLES magnesium gaas i
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MAGNESIUM arsenide, and Dix.E defau
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MAGNESIUM COMMAND MAGNESIUM Set the
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INTERSTITIAL unknown dependencies o
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INTERSTITIAL terial. Once again, th
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* CI = CStar INTERSTITIAL neu.0, ne
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INTERSTITIAL where C T is the total
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INTERSTITIAL COMMAND INTERSTITIAL S
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GERMANIUM ss.temp, ss.conc These pa
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GERMANIUM tron concentration and th
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GENERIC donor, acceptor These param
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GENERIC Dimmm.0, Dimmm.E These floa
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GENERIC C T t = 150 SUPREM-IV.GS -
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CARBON EXAMPLES carbon gaas implant
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CARBON Dix.E is the activation ener
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CARBON COMMAND CARBON Set the coeff
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BORON donor, acceptor These paramet
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BORON and Dix.E defaults to 3.46 eV
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BORON COMMAND BORON Set the coeffic
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BERYLLIUM EXAMPLES beryllium gaas i
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BERYLLIUM Dix.0, Dix.E These floati
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BERYLLIUM COMMAND BERYLLIUM Set the
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ARSENIC EXAMPLES arsenic silicon Di
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ARSENIC and Dix.E defaults to 3.65
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ARSENIC COMMAND ARSENIC Set the coe
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ANTIMONY /silicon, /oxide, /oxynit,
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ANTIMONY and interstitials, and n a
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Models BUGS These commands implemen
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STRUCTURE structure imagetool=foo x
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STRUCTURE pixely This integer param
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STRUCTURE SCES (Sept. 87 version).
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STRESS BUGS The correct boundary co
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SELECT select z=(phos - 5.0e14) Cho
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SELECT ci.star equilibrium intersti
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REGION EXAMPLES region silicon xlo=
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PROFILE antimony, arsenic, boron, p
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PRINTF printf ( 15.0 * exp ( -2.0 /
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PRINT.1D EXAMPLES print.1d x.val=1.
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PRINT.1D COMMAND PRINT.1D Print val
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PLOT.2D line.grid The line.grid par
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PLOT.2D COMMAND PLOT.2D Plot a two
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PLOT.1D clear The clear parameter s
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PLOT.1D COMMAND PLOT.1D Plot a one
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OPTION COMMAND OPTION option - Set
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METHOD REFERENCES 1. M.E. Law and R
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METHOD fies the percentage of the t
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METHOD blk.itlim The maximum number
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METHOD plexity desired for the diff
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LINE BUGS It's hard to guess how ma
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LINE COMMAND LINE Specify a mesh li
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LABEL COMMAND LABEL Put labels on a
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INITIALIZE antimony, arsenic, beryl
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IMPLANT Occasionally problems are e
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IMPLANT antimony, arsenic, boron, b
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ETCH EXAMPLES etch nitride left p1.
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ETCH COMMAND ETCH Etch a layer. SYN
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ECHO COMMAND ECHO A string printer
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DIFFUSE diffuse time=30 temp=1000 d
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DIFFUSE time This parameter represe
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DEPOSIT BUGS Only uniform grid in t
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DEPOSIT COMMAND DEPOSIT Deposit a l
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CPULOG COMMAND CPULOG Log the cpu u
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CONTOUR COMMAND CONTOUR Plot contou
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BOUNDARY COMMAND BOUNDARY Specify a
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Commands plot.1d This command allow
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Commands initialization This comman
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UNSET 42 SUPREM-IV.GS - 2D Process
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UNSET COMMAND UNSET Unset various s
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SOURCE COMMAND SOURCE Execute comma
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SET COMMAND SET Set various shell p
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MAN COMMAND MAN Online help facilit
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FOR, FOREACH EXAMPLES foreach strin
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DEFINE EXAMPLES %define bounds xmin
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The SUPREM-IV.GS Shell BUGS Numeric
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The SUPREM-IV.GS Shell macro for th
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The SUPREM-IV.GS Shell executed in
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User’s Reference Manual Par1=( 4.
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User’s Reference Manual CONVENTIO
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Adding SUPREM 3.5’s GaAs Models a
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Introduction 4 SUPREM-IV.GS - 2D Pr
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Introduction and parameters. This i
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Acknowledgments vi SUPREM-IV.GS - 2
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Table of Contents iv SUPREM-IV.GS -
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Table of Contents ETCH . . . . . .
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Copyright 1993 by The Board of Trus
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EXAMPLE 17: Full.Coupled Diffusion 312 SUPREM-IV.GS – 2D ...

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