EXAMPLE 17: Full.Coupled Diffusion 312 SUPREM-IV.GS – 2D ...

More documents

Recommendations

Info

EXAMPLE 5: LDD Cross Section Electrode 3: xmin -1.500 xmax -1.400 ymin -0.100 ymax 0.005 Electrode 4: xmin -1.500 xmax 1.500 ymin 3.000 ymax 3.000 From this information, the gate is electrode number 1, the source and drain are 2 and 3, and the backside contact is number 4. The file ldd.mesh can be read by the latest release of PISCES-II and is a “geom” type file. SUPREM-IV.GS – 2D Process Simulation for Si and GaAs 265
EXAMPLE 5: LDD Cross Section To prepare a PISCES-II structure file, the following input deck, found in “example/exam5/sup2pis.s4” can be used. #make the contact hole etch oxide right p1.x=1.4 #put down the aluminum and etch off deposit alum thick=0.1 etch alum left p1.x=1.4 #remove extra grid nodes to save Pisces compute time etch start x=-0.5 y=-0.1 etch cont x=1.6 y=-0.1 etch cont x=1.6 y=-1.0 etch done x=-0.5 y=-1.0 #reflect the structure struct mirror left #save it in Pisces format struct pisc=ldd.mesh The first line etches the oxide to form the drain contact hole. Aluminum is deposited and etched to form contact to the drain. Everything more than 0.1 m above the surface silicon is removed. This material is uninteresting to PISCES-II since it can not solve for anything more than the silicon sub- strate. The poly and oxide would just be wasted nodes. This etch uses the polygon specification for illustration. Any number of points forming a polygon can be specified. The material inside this polygon will be removed. The structure is reflected around the left edge. This doubles the number of nodes and forms the complete device with both source and drain contacts. The structure is saved in PISCES-II format in the file ldd.mesh. This command also reports the location of contacts in the mesh for PISCES-II. Electrode 1: xmin -0.550 xmax 0.550 ymin -0.100 ymax -0.025 Electrode 2: xmin 1.400 xmax 1.500 ymin -0.100 ymax 0.005 264 SUPREM-IV.GS – 2D Process Simulation for Si and GaAs
Page 1 and 2: EXAMPLE 17: Full.Coupled Diffusion
Page 3 and 4: EXAMPLE 17: Full.Coupled Diffusion
Page 5 and 6: EXAMPLE 16: Two.Dim Diffusion With
Page 7 and 8: EXAMPLE 16: Two.Dim Diffusion With
Page 9 and 10: EXAMPLE 15: Annealing An Implant Fr
Page 11 and 12: EXAMPLE 14: Grown-in and Annealed B
Page 13 and 14: EXAMPLE 13: Implanted and Annealed
Page 15 and 16: EXAMPLE 12: Dopant Activation Model
Page 17 and 18: EXAMPLE 12: Dopant Activation Model
Page 19 and 20: EXAMPLE 11: GaAs Simulation - 2D 29
Page 21 and 22: EXAMPLE 11: GaAs Simulation - 2D im
Page 23 and 24: EXAMPLE 10: GaAs MESFET Gate Simula
Page 25 and 26: EXAMPLE 10: GaAs MESFET Gate Simula
Page 27 and 28: EXAMPLE 9: Stress Dependent Oxidati
Page 33 and 34: EXAMPLE 8: Shear Stress FIGURE 1 Cr
Page 35 and 36: EXAMPLE 8: Shear Stress line y loc=
Page 37 and 38: EXAMPLE 7: Fully Recessed Oxide Gro
Page 43 and 44: EXAMPLE 6: One Dimensional Oxide Gr
Page 45 and 46: EXAMPLE 6: One Dimensional Oxide Gr
Page 47: EXAMPLE 5: LDD Cross Section 266 SU
Page 51 and 52: EXAMPLE 5: LDD Cross Section This i
Page 53 and 54: EXAMPLE 5: LDD Cross Section The ne
Page 55 and 56: EXAMPLE 5: LDD Cross Section #depos
Page 57 and 58: EXAMPLE 4: Boron OED - 2D 256 SUPRE
Page 59 and 60: EXAMPLE 4: Boron OED - 2D FIGURE 3
Page 61 and 62: EXAMPLE 4: Boron OED - 2D equal to
Page 63 and 64: EXAMPLE 4: Boron OED - 2D deposit o
Page 65 and 66: EXAMPLE 3: OED Time 248 SUPREM-IV.G
Page 67 and 68: EXAMPLE 3: OED Time %define den ${t
Page 69 and 70: EXAMPLE 3: OED Time %define tfci 0.
Page 71 and 72: EXAMPLE 2: Boron OED - 1D 242 SUPRE
Page 73 and 74: EXAMPLE 2: Boron OED - 1D than the
Page 75 and 76: EXAMPLE 2: Boron OED - 1D select z=
Page 77 and 78: EXAMPLE 1: Boron Anneal - 1D 236 SU
Page 79 and 80: EXAMPLE 1: Boron Anneal - 1D Solvin
Page 81 and 82: EXAMPLE 1: Boron Anneal - 1D The ne
Page 83 and 84: EXAMPLE 1: Boron Anneal - 1D #save
Page 85 and 86: Examples 228 SUPREM-IV.GS - 2D Proc
Page 87 and 88: ZINC 226 SUPREM-IV.GS - 2D Process
Page 89 and 90: ZINC ss.temp, ss.conc These paramet
Page 91 and 92: ZINC librium value, D V and D I are
Page 93 and 94: VACANCY promising with these models
Page 95 and 96: VACANCY vmole, theta.0, theta.E, Gp
Page 97 and 98: VACANCY Kr.0, Kr.E These floating p
Page 99 and 100:
VACANCY DESCRIPTION This statement
Page 101 and 102:
TRAP BUGS There are no known bugs i
Page 103 and 104:
TRAP COMMAND TRAP Set coefficients
Page 105 and 106:
TIN ss.temp, ss.conc These paramete
Page 107 and 108:
TIN tration and the intrinsic conce
Page 109 and 110:
iSILICON SEE ALSO The antimony, ars
Page 111 and 112:
iSILICON ss.clear This parameter cl
Page 113 and 114:
iSILICON diffusivities with vacanci
Page 115 and 116:
SELENIUM selenium gaas /nitride Seg
Page 117 and 118:
SELENIUM faults to 0.0 eV [1,2,3].
Page 119 and 120:
SELENIUM COMMAND SELENIUM Set the c
Page 121 and 122:
PHOSPHORUS Trn.0, Trn.E These param
Page 123 and 124:
PHOSPHORUS Dix.0, Dix.E These float
Page 125 and 126:
PHOSPHORUS COMMAND PHOSPHORUS Set t
Page 127 and 128:
OXIDE erf.lbb The erf.lbb parameter
Page 129 and 130:
OXIDE stress.dep, Vc, Vr, Vd, Vt, D
Page 131 and 132:
OXIDE dry | wet The type of oxidati
Page 133 and 134:
OXIDE COMMAND OXIDE Specify oxidati
Page 135 and 136:
MATERIAL lcte This is an expression
Page 137 and 138:
MATERIAL COMMAND MATERIAL Set the c
Page 139 and 140:
MAGNESIUM EXAMPLES magnesium gaas i
Page 141 and 142:
MAGNESIUM arsenide, and Dix.E defau
Page 143 and 144:
MAGNESIUM COMMAND MAGNESIUM Set the
Page 145 and 146:
INTERSTITIAL unknown dependencies o
Page 147 and 148:
INTERSTITIAL terial. Once again, th
Page 149 and 150:
* CI = CStar INTERSTITIAL neu.0, ne
Page 151 and 152:
INTERSTITIAL where C T is the total
Page 153 and 154:
INTERSTITIAL COMMAND INTERSTITIAL S
Page 155 and 156:
GERMANIUM ss.temp, ss.conc These pa
Page 157 and 158:
GERMANIUM tron concentration and th
Page 159 and 160:
GENERIC donor, acceptor These param
Page 161 and 162:
GENERIC Dimmm.0, Dimmm.E These floa
Page 163 and 164:
GENERIC C T t = 150 SUPREM-IV.GS -
Page 165 and 166:
CARBON EXAMPLES carbon gaas implant
Page 167 and 168:
CARBON Dix.E is the activation ener
Page 169 and 170:
CARBON COMMAND CARBON Set the coeff
Page 171 and 172:
BORON donor, acceptor These paramet
Page 173 and 174:
BORON and Dix.E defaults to 3.46 eV
Page 175 and 176:
BORON COMMAND BORON Set the coeffic
Page 177 and 178:
BERYLLIUM EXAMPLES beryllium gaas i
Page 179 and 180:
BERYLLIUM Dix.0, Dix.E These floati
Page 181 and 182:
BERYLLIUM COMMAND BERYLLIUM Set the
Page 183 and 184:
ARSENIC EXAMPLES arsenic silicon Di
Page 185 and 186:
ARSENIC and Dix.E defaults to 3.65
Page 187 and 188:
ARSENIC COMMAND ARSENIC Set the coe
Page 189 and 190:
ANTIMONY /silicon, /oxide, /oxynit,
Page 191 and 192:
ANTIMONY and interstitials, and n a
Page 193 and 194:
Models BUGS These commands implemen
Page 195 and 196:
STRUCTURE structure imagetool=foo x
Page 197 and 198:
STRUCTURE pixely This integer param
Page 199 and 200:
STRUCTURE SCES (Sept. 87 version).
Page 201 and 202:
STRESS BUGS The correct boundary co
Page 203 and 204:
SELECT select z=(phos - 5.0e14) Cho
Page 205 and 206:
SELECT ci.star equilibrium intersti
Page 207 and 208:
REGION EXAMPLES region silicon xlo=
Page 209 and 210:
PROFILE antimony, arsenic, boron, p
Page 211 and 212:
PRINTF printf ( 15.0 * exp ( -2.0 /
Page 213 and 214:
PRINT.1D EXAMPLES print.1d x.val=1.
Page 215 and 216:
PRINT.1D COMMAND PRINT.1D Print val
Page 217 and 218:
PLOT.2D line.grid The line.grid par
Page 219 and 220:
PLOT.2D COMMAND PLOT.2D Plot a two
Page 221 and 222:
PLOT.1D clear The clear parameter s
Page 223 and 224:
PLOT.1D COMMAND PLOT.1D Plot a one
Page 225 and 226:
OPTION COMMAND OPTION option - Set
Page 227 and 228:
METHOD REFERENCES 1. M.E. Law and R
Page 229 and 230:
METHOD fies the percentage of the t
Page 231 and 232:
METHOD blk.itlim The maximum number
Page 233 and 234:
METHOD plexity desired for the diff
Page 235 and 236:
LINE BUGS It's hard to guess how ma
Page 237 and 238:
LINE COMMAND LINE Specify a mesh li
Page 239 and 240:
LABEL COMMAND LABEL Put labels on a
Page 241 and 242:
INITIALIZE antimony, arsenic, beryl
Page 243 and 244:
IMPLANT Occasionally problems are e
Page 245 and 246:
IMPLANT antimony, arsenic, boron, b
Page 247 and 248:
ETCH EXAMPLES etch nitride left p1.
Page 249 and 250:
ETCH COMMAND ETCH Etch a layer. SYN
Page 251 and 252:
ECHO COMMAND ECHO A string printer
Page 253 and 254:
DIFFUSE diffuse time=30 temp=1000 d
Page 255 and 256:
DIFFUSE time This parameter represe
Page 257 and 258:
DEPOSIT BUGS Only uniform grid in t
Page 259 and 260:
DEPOSIT COMMAND DEPOSIT Deposit a l
Page 261 and 262:
CPULOG COMMAND CPULOG Log the cpu u
Page 263 and 264:
CONTOUR COMMAND CONTOUR Plot contou
Page 265 and 266:
BOUNDARY COMMAND BOUNDARY Specify a
Page 267 and 268:
Commands plot.1d This command allow
Page 269 and 270:
Commands initialization This comman
Page 271 and 272:
UNSET 42 SUPREM-IV.GS - 2D Process
Page 273 and 274:
UNSET COMMAND UNSET Unset various s
Page 275 and 276:
SOURCE COMMAND SOURCE Execute comma
Page 277 and 278:
SET COMMAND SET Set various shell p
Page 279 and 280:
MAN COMMAND MAN Online help facilit
Page 281 and 282:
FOR, FOREACH EXAMPLES foreach strin
Page 283 and 284:
DEFINE EXAMPLES %define bounds xmin
Page 285 and 286:
The SUPREM-IV.GS Shell BUGS Numeric
Page 287 and 288:
The SUPREM-IV.GS Shell macro for th
Page 289 and 290:
The SUPREM-IV.GS Shell executed in
Page 291 and 292:
User’s Reference Manual Par1=( 4.
Page 293 and 294:
User’s Reference Manual CONVENTIO
Page 295 and 296:
Adding SUPREM 3.5’s GaAs Models a
Page 297 and 298:
Page 299 and 300:
Page 301 and 302:
Page 303 and 304:
Page 305 and 306:
Page 307 and 308:
Page 309 and 310:
Introduction 4 SUPREM-IV.GS - 2D Pr
Page 311 and 312:
Introduction and parameters. This i
Page 313 and 314:
Acknowledgments vi SUPREM-IV.GS - 2
Page 315 and 316:
Table of Contents iv SUPREM-IV.GS -
Page 317 and 318:
Table of Contents ETCH . . . . . .
Page 319 and 320:
Copyright 1993 by The Board of Trus
show all

EXAMPLE 17: Full.Coupled Diffusion 312 SUPREM-IV.GS – 2D ...

You also want an ePaper? Increase the reach of your titles

Delete template?

Save as template?