EXAMPLE 17: Full.Coupled Diffusion 312 SUPREM-IV.GS – 2D ...

EXAMPLE 11: GaAs Simulation – 2D
EXAMPLE 11 GaAs Simulation – 2D
This shows how one would do a 2D GaAs simulation. A 2D grid is set up,
and silicon and beryllium are implanted in the source, drain and channel
regions. Then the doping contours are plotted for the designated concen-
tration levels in Figure 2. In this example, only one half of the structure is
simulated, then mirrored before the result is plotted, in order to speed up
simulation time. The input file for the simulation is in the “examples/
exam11” directory, in the file example11.in.
option quiet
set echo
line x loc = 0.0 tag=left spacing = 0.5
line x loc = 0.50 spacing = 0.5
line x loc = 4.00 spacing = 0.5
line x loc = 4.10 spacing = 0.1
line x loc = 4.20 spacing = 0.05
line x loc = 4.50 spacing = 0.05
line x loc = 5.00 tag=right spacing = 0.05
line y loc=0.0 tag=top spacing=0.03
line y loc=0.3 spacing=0.03
line y loc=1.0 spacing=0.1
line y loc=3.0 tag=bottom spacing=0.3
region gaas xlo=left xhi=right ylo=top yhi=bottom
boundary exposed xlo=left xhi=right ylo=top yhi=top
boundary backside xlo=left xhi=right ylo=bottom yhi=bottom
init isilicon conc=3e15
deposit nitride thick=1.0
etch nitride start x=5 y=0.0
etch continue x=5 y=-1.10
etch continue x=4.5 y=-1.10
etch done x=4.5 y=0.0
implant isilicon dose=1.75e12 energy=75 pearson
SUPREM-IV.GS – 2D Process Simulation for Si and GaAs 291