EXAMPLE 17: Full.Coupled Diffusion 312 SUPREM-IV.GS – 2D ...

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EXAMPLE 12: Dopant Activation Model Example FIGURE 1 Silicon, electrons, and net doping profiles for a silicon/beryllium MESFET structure. The default activation models are used for silicon. SUPREM-IV.GS – 2D Process Simulation for Si and GaAs 297
EXAMPLE 12: Dopant Activation Model Example Silicon is implanted into GaAs with a beryllium doped background. Figure 1 shows the 1D plot of this. The default n and p-type activation models are used, commented out in the lines: #material gaas p.type act.a="(2.2 - 0.00117 * T)" act.b="1.00e21" #material gaas n.type act.a="(2.2 - 0.00117 * T)" act.b="4.25e18" Plotted in Figure 1 are the silicon profile, the electron profile, and the net doping profile. The electron profile takes into account the less than 100 percent net n-type dopant activation under the silicon peak, as well as the reduced electron concentration in the bulk due to the beryllium background doping. The abs(doping) profile clearly shows the silicon/beryllium n/p junction. Figure 2 shows the results when the n-type activation model parameters are changed. In this case, the following line is included: material gaas n.type act.a="(2.2 - 0.00117 * T)" act.b="4.25e18" Note that the act.b parameter has been changed. This increases the net ac- tive n-type dopant concentration under the peak of the silicon implant profile. 296 SUPREM-IV.GS – 2D Process Simulation for Si and GaAs
Page 1 and 2: EXAMPLE 17: Full.Coupled Diffusion
Page 3 and 4: EXAMPLE 17: Full.Coupled Diffusion
Page 5 and 6: EXAMPLE 16: Two.Dim Diffusion With
Page 7 and 8: EXAMPLE 16: Two.Dim Diffusion With
Page 9 and 10: EXAMPLE 15: Annealing An Implant Fr
Page 11 and 12: EXAMPLE 14: Grown-in and Annealed B
Page 13 and 14: EXAMPLE 13: Implanted and Annealed
Page 15: EXAMPLE 12: Dopant Activation Model
Page 19 and 20: EXAMPLE 11: GaAs Simulation - 2D 29
Page 21 and 22: EXAMPLE 11: GaAs Simulation - 2D im
Page 23 and 24: EXAMPLE 10: GaAs MESFET Gate Simula
Page 25 and 26: EXAMPLE 10: GaAs MESFET Gate Simula
Page 27 and 28: EXAMPLE 9: Stress Dependent Oxidati
Page 33 and 34: EXAMPLE 8: Shear Stress FIGURE 1 Cr
Page 35 and 36: EXAMPLE 8: Shear Stress line y loc=
Page 37 and 38: EXAMPLE 7: Fully Recessed Oxide Gro
Page 43 and 44: EXAMPLE 6: One Dimensional Oxide Gr
Page 45 and 46: EXAMPLE 6: One Dimensional Oxide Gr
Page 47 and 48: EXAMPLE 5: LDD Cross Section 266 SU
Page 49 and 50: EXAMPLE 5: LDD Cross Section To pre
Page 51 and 52: EXAMPLE 5: LDD Cross Section This i
Page 53 and 54: EXAMPLE 5: LDD Cross Section The ne
Page 55 and 56: EXAMPLE 5: LDD Cross Section #depos
Page 57 and 58: EXAMPLE 4: Boron OED - 2D 256 SUPRE
Page 59 and 60: EXAMPLE 4: Boron OED - 2D FIGURE 3
Page 61 and 62: EXAMPLE 4: Boron OED - 2D equal to
Page 63 and 64: EXAMPLE 4: Boron OED - 2D deposit o
Page 65 and 66: EXAMPLE 3: OED Time 248 SUPREM-IV.G
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EXAMPLE 3: OED Time %define den ${t
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EXAMPLE 3: OED Time %define tfci 0.
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EXAMPLE 2: Boron OED - 1D 242 SUPRE
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EXAMPLE 2: Boron OED - 1D than the
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EXAMPLE 2: Boron OED - 1D select z=
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EXAMPLE 1: Boron Anneal - 1D 236 SU
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EXAMPLE 1: Boron Anneal - 1D Solvin
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EXAMPLE 1: Boron Anneal - 1D The ne
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EXAMPLE 1: Boron Anneal - 1D #save
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Examples 228 SUPREM-IV.GS - 2D Proc
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ZINC 226 SUPREM-IV.GS - 2D Process
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ZINC ss.temp, ss.conc These paramet
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ZINC librium value, D V and D I are
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VACANCY promising with these models
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VACANCY vmole, theta.0, theta.E, Gp
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VACANCY Kr.0, Kr.E These floating p
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VACANCY DESCRIPTION This statement
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TRAP BUGS There are no known bugs i
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TRAP COMMAND TRAP Set coefficients
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TIN ss.temp, ss.conc These paramete
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TIN tration and the intrinsic conce
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iSILICON SEE ALSO The antimony, ars
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iSILICON ss.clear This parameter cl
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iSILICON diffusivities with vacanci
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SELENIUM selenium gaas /nitride Seg
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SELENIUM faults to 0.0 eV [1,2,3].
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SELENIUM COMMAND SELENIUM Set the c
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PHOSPHORUS Trn.0, Trn.E These param
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PHOSPHORUS Dix.0, Dix.E These float
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PHOSPHORUS COMMAND PHOSPHORUS Set t
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OXIDE erf.lbb The erf.lbb parameter
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OXIDE stress.dep, Vc, Vr, Vd, Vt, D
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OXIDE dry | wet The type of oxidati
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OXIDE COMMAND OXIDE Specify oxidati
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MATERIAL lcte This is an expression
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MATERIAL COMMAND MATERIAL Set the c
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MAGNESIUM EXAMPLES magnesium gaas i
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MAGNESIUM arsenide, and Dix.E defau
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MAGNESIUM COMMAND MAGNESIUM Set the
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INTERSTITIAL unknown dependencies o
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INTERSTITIAL terial. Once again, th
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* CI = CStar INTERSTITIAL neu.0, ne
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INTERSTITIAL where C T is the total
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INTERSTITIAL COMMAND INTERSTITIAL S
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GERMANIUM ss.temp, ss.conc These pa
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GERMANIUM tron concentration and th
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GENERIC donor, acceptor These param
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GENERIC Dimmm.0, Dimmm.E These floa
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GENERIC C T t = 150 SUPREM-IV.GS -
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CARBON EXAMPLES carbon gaas implant
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CARBON Dix.E is the activation ener
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CARBON COMMAND CARBON Set the coeff
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BORON donor, acceptor These paramet
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BORON and Dix.E defaults to 3.46 eV
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BORON COMMAND BORON Set the coeffic
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BERYLLIUM EXAMPLES beryllium gaas i
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BERYLLIUM Dix.0, Dix.E These floati
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BERYLLIUM COMMAND BERYLLIUM Set the
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ARSENIC EXAMPLES arsenic silicon Di
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ARSENIC and Dix.E defaults to 3.65
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ARSENIC COMMAND ARSENIC Set the coe
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ANTIMONY /silicon, /oxide, /oxynit,
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ANTIMONY and interstitials, and n a
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Models BUGS These commands implemen
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STRUCTURE structure imagetool=foo x
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STRUCTURE pixely This integer param
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STRUCTURE SCES (Sept. 87 version).
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STRESS BUGS The correct boundary co
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SELECT select z=(phos - 5.0e14) Cho
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SELECT ci.star equilibrium intersti
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REGION EXAMPLES region silicon xlo=
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PROFILE antimony, arsenic, boron, p
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PRINTF printf ( 15.0 * exp ( -2.0 /
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PRINT.1D EXAMPLES print.1d x.val=1.
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PRINT.1D COMMAND PRINT.1D Print val
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PLOT.2D line.grid The line.grid par
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PLOT.2D COMMAND PLOT.2D Plot a two
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PLOT.1D clear The clear parameter s
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PLOT.1D COMMAND PLOT.1D Plot a one
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OPTION COMMAND OPTION option - Set
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METHOD REFERENCES 1. M.E. Law and R
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METHOD fies the percentage of the t
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METHOD blk.itlim The maximum number
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METHOD plexity desired for the diff
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LINE BUGS It's hard to guess how ma
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LINE COMMAND LINE Specify a mesh li
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LABEL COMMAND LABEL Put labels on a
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INITIALIZE antimony, arsenic, beryl
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IMPLANT Occasionally problems are e
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IMPLANT antimony, arsenic, boron, b
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ETCH EXAMPLES etch nitride left p1.
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ETCH COMMAND ETCH Etch a layer. SYN
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ECHO COMMAND ECHO A string printer
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DIFFUSE diffuse time=30 temp=1000 d
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DIFFUSE time This parameter represe
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DEPOSIT BUGS Only uniform grid in t
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DEPOSIT COMMAND DEPOSIT Deposit a l
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CPULOG COMMAND CPULOG Log the cpu u
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CONTOUR COMMAND CONTOUR Plot contou
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BOUNDARY COMMAND BOUNDARY Specify a
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Commands plot.1d This command allow
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Commands initialization This comman
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UNSET 42 SUPREM-IV.GS - 2D Process
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UNSET COMMAND UNSET Unset various s
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SOURCE COMMAND SOURCE Execute comma
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SET COMMAND SET Set various shell p
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MAN COMMAND MAN Online help facilit
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FOR, FOREACH EXAMPLES foreach strin
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DEFINE EXAMPLES %define bounds xmin
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The SUPREM-IV.GS Shell BUGS Numeric
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The SUPREM-IV.GS Shell macro for th
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The SUPREM-IV.GS Shell executed in
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User’s Reference Manual Par1=( 4.
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User’s Reference Manual CONVENTIO
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Adding SUPREM 3.5’s GaAs Models a
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Introduction 4 SUPREM-IV.GS - 2D Pr
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Introduction and parameters. This i
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Acknowledgments vi SUPREM-IV.GS - 2
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Table of Contents iv SUPREM-IV.GS -
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Table of Contents ETCH . . . . . .
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Copyright 1993 by The Board of Trus
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EXAMPLE 17: Full.Coupled Diffusion 312 SUPREM-IV.GS – 2D ...

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