EXAMPLE 17: Full.Coupled Diffusion 312 SUPREM-IV.GS – 2D ...

EXAMPLE 5: LDD Cross Section
This anneal will be carried out for 20 minutes at 950˚C. The structure is
saved in the file ldd.str. At this point, any of the structure files can be read
back and examined to check the results. Commands and analysis similar to
that found in Example 4 may be performed.
To just perform a simple check, the following commands should produce a
plot.
plot.2d bound fill y.max=1.0
select z=log10(phos+ars)-log10(bor)
contour val=0.0
The first command plots the device outline. The second command selects
the difference in the logs of the doping. This tends to produce much
smoother contours for plotting purposes. The final command plots the
junction location, as shown below.
FIGURE 1 Final LDD Device Structure.
SUPREM-IV.GS – 2D Process Simulation for Si and GaAs 263