9-2022

Cellular Module Featuring an Embedded SIM
u-blox has announced the u-blox
SARA-R500E, its first cellular
module with an embedded SIM
chip (eSIM). Offering LTE-M
connectivity, SARA-R500E is
designed for size-constrained
applications with high requirements
in terms of robustness
and security, such as connected
healthcare and asset trackers.
The first variant of the module
will offer out-of-the-box connectivity
on a North American
LTE-M cellular network.
eSIMs are increasingly gaining a
foothold in devices offering cellular
connectivity. Today, most
such devices, including the vast
majority of smartphones, still
feature a plastic SIM card that
contains all the attributes and
features required to connect the
device to the cellular network.
Like the plastic SIMs they are
designed to replace, eSIMs are
provisioned with a profile that
allows devices to connect to a
specific mobile network operator.
Robust, secure, and compact:
The eSIM embedded in the
SARA-R500E offers product
developers and end-users important
advantages. eSIMs are more
robust than standard plastic SIMs
and cannot be stolen or removed,
increasing the security of the
device. By doing away with the
components required to hold and
connect plastic SIM cards, they
enable smaller devices, reduce
the bill of material and simplify
manufacturing. Finally, SARA-
R500E streamlines sourcing by
offering the module, data plans,
and the SIM from one house.
The fact that the SARA-R500E
module’s eSIM does not need to
be inserted manually by the enduser
allows product developers
to design tightly sealed devices
that meet the demanding IP67
and IP68 criteria. This makes
the module ideal for rugged
IoT applications such as smart
meters, surveillance cameras,
and environmental sensors.
The module also offers the option
to access u-blox’s MQTT Anywhere
service, which reduces
bandwidth requirements for cellular
data transfer, saving costs
and power. u-blox IoT Locationas-a-service
portfolio, including
AssistNow for real-time GNSS
assistance data, and CellLocate,
for cellular network-based positioning,
is also available. SARA-
R500E is pin-to-pin compatible
with all the other modules in
the SARA family and uses the
SARA-R5 AT command interface,
making it easy to drop
the SARA-R500E into existing
designs.
■ u-blox
www.u-blox.com
5G, Low-PIM, In-Building DAS
Antennas
KP Performance Antennas, an
Infinite Electronics brand and
a manufacturer of wireless network
antennas, has just introduced
a new series of 5G, low-
PIM, in-building DAS antennas
covering 600 MHz to 6 GHz. The
indoor wall-mount and ceiling
mount antennas meet the demand
that in-building wireless distributed
networks have for highquality
antennas with low-PIM
ratings, SISO and MIMO support
and wide bandwidth coverage.
These new 5G, low-PIM antennas
are 700 MHz FirstNet/First
Responder Network ready and
suitable for indoor DAS, private
networks, hospital and enterprise
deployments. They also feature
Type N and 4.3-10 connector
options for improved PIM consistency
as well as a low passive
intermodulation of less than
minus-150 dBc when tested with
2 x 20 W tones.
■ KP Performance Antennas
www.infiniteelectronics.com
300-W Fixed Attenuator
BroadWave Technologies
announced a 300-W fixed attenuator
series, designed for wireless
applications. These attenuators
reduce the amount of power
delivered in a transmission line
without introducing much noise
or distortion. Model series 352-
023-XXX is a 50-ohm fixed
attenuator with an operating frequency
range of DC to 2.4 GHz.
Standard attenuation values are
3, 6, 10, 20, and 30 dB. Maximum
SWR is 1.25, the temperature
range is - 40 to +40 °C and
the RF connectors are N male/N
female. Other RF connector
types and genders are available
in this package. Additional applications
include test equipment,
telecommunication systems,
base stations, radar applications
and defense programs.
■ BroadWave Technologies, Inc.
www.broadwavetechnologies.
com
Powerful GaN X-Band HPA
Richardson RFPD, Inc., an Arrow
Electronics company, announced the
availability and full design support
capabilities for a new gallium nitride
high-power amplifier from United
Monolithic Semiconductors. The
CHA8312-99F is a two-stage GaN
HPA that operates from 8 to 12 GHz
and provides 17 W output power,
50% power added efficiency, and
26 dB small signal gain. The part
is developed on a robust 0.15 µm
gate length GaN on SiC HEMT process
and is available as a bare die.
The new device is ideal for defense
56 hf-praxis 9/2022