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1 DENTON DISCOVERY 550 REACTED SPUTTERED ...

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1.0 SCOPE<br />

<strong>REACTED</strong> <strong>SPUTTERED</strong> DEPOSITION<br />

This document establishes the procedures for reacted sputtered deposition of thin metal or<br />

dielectric films on silicon, GaAs, and other substrates in the Nanoelectronics Laboratory.<br />

2.0 APPLICABLE DOCUMENTS<br />

Sputterer logbook and maintenance log<br />

System Component Operation Manuals<br />

3.0 MATERIALS AND EQUIPMENT<br />

Denton Discovery <strong>550</strong> sputtering System<br />

Tweezers<br />

Isopropyl Alcohol<br />

Cleanroom wiper<br />

Various sputtering targets<br />

4.0 GENERAL<br />

4.1 Denton Discovery <strong>550</strong> Sputterer is configured for thin film deposition of<br />

up to 4 materials sequentially without breaking the vacuum. The system is<br />

equipped with two 3" DC target positions and two 3” RF target one. The<br />

target number 3 is the dual power one that can run either DC or RF power.<br />

The machine can run reactive deposition utilizing a high temperature heater<br />

in plasma environment. It can also create alloy films by co-deposition of<br />

the RF and DC targets.<br />

4.2 Vacuum Integrity Maintenance Maintaining a low background pressure is<br />

necessary to deposit quality thin films. To avoid contamination these<br />

practices need to be followed:<br />

4.2.1. Never touch any part(s) inside the chamber or part(s) going into the<br />

chamber with bare hands or contaminated gloves.<br />

4.2.2 Handle substrate table and parts going into the chamber with<br />

gloves and/or vacuum system tools.<br />

4.2.3 Avoid unnecessary touching/handling of chamber parts and vacuum<br />

system tools, even with gloves on.<br />

4.2.4 Clean any area or tool which will contact vacuum chamber parts by<br />

wiping with lint-free wipes and isopropyl alcohol.<br />

2

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