1 DENTON DISCOVERY 550 REACTED SPUTTERED ...
1 DENTON DISCOVERY 550 REACTED SPUTTERED ...
1 DENTON DISCOVERY 550 REACTED SPUTTERED ...
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1.0 SCOPE<br />
<strong>REACTED</strong> <strong>SPUTTERED</strong> DEPOSITION<br />
This document establishes the procedures for reacted sputtered deposition of thin metal or<br />
dielectric films on silicon, GaAs, and other substrates in the Nanoelectronics Laboratory.<br />
2.0 APPLICABLE DOCUMENTS<br />
Sputterer logbook and maintenance log<br />
System Component Operation Manuals<br />
3.0 MATERIALS AND EQUIPMENT<br />
Denton Discovery <strong>550</strong> sputtering System<br />
Tweezers<br />
Isopropyl Alcohol<br />
Cleanroom wiper<br />
Various sputtering targets<br />
4.0 GENERAL<br />
4.1 Denton Discovery <strong>550</strong> Sputterer is configured for thin film deposition of<br />
up to 4 materials sequentially without breaking the vacuum. The system is<br />
equipped with two 3" DC target positions and two 3” RF target one. The<br />
target number 3 is the dual power one that can run either DC or RF power.<br />
The machine can run reactive deposition utilizing a high temperature heater<br />
in plasma environment. It can also create alloy films by co-deposition of<br />
the RF and DC targets.<br />
4.2 Vacuum Integrity Maintenance Maintaining a low background pressure is<br />
necessary to deposit quality thin films. To avoid contamination these<br />
practices need to be followed:<br />
4.2.1. Never touch any part(s) inside the chamber or part(s) going into the<br />
chamber with bare hands or contaminated gloves.<br />
4.2.2 Handle substrate table and parts going into the chamber with<br />
gloves and/or vacuum system tools.<br />
4.2.3 Avoid unnecessary touching/handling of chamber parts and vacuum<br />
system tools, even with gloves on.<br />
4.2.4 Clean any area or tool which will contact vacuum chamber parts by<br />
wiping with lint-free wipes and isopropyl alcohol.<br />
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