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MAGNETISM ELECTRON TRANSPORT MAGNETORESISTIVE LANTHANUM CALCIUM MANGANITE

MAGNETISM ELECTRON TRANSPORT MAGNETORESISTIVE LANTHANUM CALCIUM MANGANITE

MAGNETISM ELECTRON TRANSPORT MAGNETORESISTIVE LANTHANUM CALCIUM MANGANITE

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Electronic and Magnetic Measurements 29<br />

attached to this surface with double-sided sticky tape to measure the Hall<br />

effect and transverse magnetoresistance. A simple copper plate attached to<br />

the tip of the transport probe provides a surface parallel to the magnetic field<br />

for longitudinal and transverse magnetoresistance measurements. One<br />

limitation of the SQUID magnetometer is its relatively small sample chamber<br />

(8mm diameter).<br />

High temperature (300K < T < 1200K) measurements were performed in a<br />

furnace (in air) with a slowly varying temperature (≈ 1 K/min.). The<br />

temperature was recorded using a Type-K thermocouple positioned a few<br />

millimeters from the sample. The sample holder was made from an 8 bore<br />

alumina rod. The 2 thermocouple wires and 4 platinum wires which contact<br />

the sample were fed through the bores of the alumina rod. The wires are<br />

positioned to facilitate changing the sample and attaching new contacts. The<br />

furnace was programmed to heat and cool using a standard Eurotherm<br />

(model 818) power regulator and temperature controller. Data were<br />

continuously recorded by a computer using LabView software as the furnace<br />

heated and cooled. Lower temperature measurements can be similarly made<br />

by dipping the probe into a dewar of liquid nitrogen or liquid helium.<br />

3.1.3 Analysis<br />

Careful transport measurements can help identify transport mechanisms.<br />

Knowledge of transport mechanisms not only helps us to understand the<br />

microscopic nature of the material but also allows us to predict other<br />

properties using previous theoretical or empirical knowledge of other<br />

materials with the same transport mechanism. For example a few percent<br />

impurity due to processing may not affect the room temperature resistivity of<br />

a metal while greatly decreasing that of a band semiconductor.<br />

Some of the common transport mechanisms and their predicted transport<br />

properties are given below. Since there is not much overlap of mechanisms<br />

or properties between metals and insulators, it is convenient to categorize

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