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Intensity<br />
Z-Contrast Ge/SiO Interface<br />
2<br />
1 2 3 4 5 6 nm<br />
Si Ge<br />
SiO2 Computational Materials Science and Engineering<br />
• Ge after<br />
oxidation<br />
packed into<br />
compact layer,<br />
~ 4-5 nm wide<br />
• peak ~100% Ge