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Reason for TED: Implant Damage NEBM-DFT: Interstitial assisted two-step mechanism: Intrinsic diffusion: Create interstitial, B captures interstitial, diffuse together ⇒ Diffusion barrier: E form (I) – E bind (BI) + E mig (BI) 4 eV 1 eV 0.6 eV ~ 3.6 eV After implant: Interstitials for “free” ⇒ transient enhanced diffusion W. Windl, M.M. Bunea, R. Stumpf, S.T. Dunham, and M.P. Masquelier, Proc. MSM99 (Cambridge, MA, 1999), p. 369; MRS Proc. 568, 91 (1999); Phys. Rev. Lett. 83, 4345 (1999). Computational Materials Science and Engineering
T( o C) Reason for Deactivation – Si-B Phase Diagram 2200 2000 1800 1600 1400 1200 1000 2092 2020 B SiB 14 Si 10 B 60 1850 Si 1.8B 5.2 1385 1270 Computational Materials Science and Engineering 1414 800 0 10 20 30 40 50 60 70 80 90 100 B Si L Si
Page 1 and 2:
Ab-initio Assisted Process and Devi
Page 3 and 4:
1. Semiconductor Technology Scaling
Page 5 and 6:
Role of Ab-Initio Methods on Nanosc
Page 7 and 8:
Bridging the Length Scales: Ab-Init
Page 9 and 10: Buczko et al. Abrupt vs. Diffuse In
Page 11 and 12: intensity (a.u.) 70 60 50 40 30 20
Page 13 and 14: site and momentum resolved DOS Si-L
Page 15 and 16: 0.5 nm nm Si Combining Theory and E
Page 17 and 18: Band Line-Up Si/SiO 2 Real-space ba
Page 19 and 20: Intensity Z-Contrast Ge/SiO Interfa
Page 21 and 22: Monte Carlo Results - Animation •
Page 23 and 24: 0.5 nm Si Intensity Si/SiO vs. Ge/S
Page 25 and 26: Conclusions 2 • Atomic-scale char
Page 27 and 28: I p ( ) ( ) 2 V = ∫ T , ( ) ( ) =
Page 29 and 30: The Molecular Transport Problem I E
Page 31 and 32: Accelerated Molecular Dynamics •
Page 33 and 34: Carbon Nanotube on Pt • From work
Page 35 and 36: Carbon Nanotube on Ti •Large rela
Page 37 and 38: Contact Dependence of I-V Curve for
Page 39 and 40: Contact Dependence of I-V Curve for
Page 41 and 42: Funding • Semiconductor Research
Page 43 and 44: Right: • Ti below 10 a.u. and abo
Page 45 and 46: The main peak in the X structure is
Page 47 and 48: Current (A)
Page 49 and 50: Previous calculations and new ones.
Page 51 and 52: MD smoothes out most of the conduct
Page 53 and 54: MOSFET Scaling: Ultrashallow Juncti
Page 55 and 56: Ab-Initio Calculations - Standard C
Page 57 and 58: How To Find Migration Barriers I
Page 59: Calculation of Diffusion Prefactors
Page 63 and 64: Cluster Formation - Reaction Barrie
Page 65 and 66: Activation and Clusters 30 min anne
Page 67 and 68: *A. Asenov Statistical Effects in N
Page 69 and 70: Vacuum level E F Lead CNT VB CNT-FE
Page 71 and 72: The main peak in the X structure is
Page 73: PDOS for the relaxed CNT in line wi
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