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Conclusions 2<br />
• Atomic-scale characterization is possible:<br />
Ab-initio methods in conjunction with Z-contrast &<br />
EELS can resolve interface structure.<br />
• Atomically sharp Ge/SiO 2 interface observed<br />
• Reliable structure-property relationship for well<br />
characterized structure (band line-up)<br />
• Abrupt is good<br />
• Sharp interface from Ge-O repulsion (“snowplowing”)<br />
Computational Materials Science and Engineering