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Insulator (SiO 2 ) + + Source + - P + N: e - , e.g. As (Donor) - Semiconductor Devices – MOSFET Metal Oxide Semiconductor Field Effect Transistor + + + - - - 0V G Gate (Me) Channel - N Doping: - - - + + + + + Si Spacer P: holes, e.g. B (Acceptor) - + Drain + + + P + + - – V D Source + P + Computational Materials Science and Engineering + + + + + - Gate N + Drain + + + P + + + + + + + + + + - - - + + + + + + + + - - - - - - – V G I D - Si – V D • Analog: Amplification • Digital: Logic gates -
1. Semiconductor Technology Scaling – Improving Traditional TCAD • Feature size shrinks on average by 12% p.a.; speed ∝ size • Chip size increases on average by 2.3% p.a. Overall performance: ↑ by ~55% p.a. or ~ doubling every 18 months (“Moore’s Law”) Computational Materials Science and Engineering
Page 1: Ab-initio Assisted Process and Devi
Page 5 and 6: Role of Ab-Initio Methods on Nanosc
Page 7 and 8: Bridging the Length Scales: Ab-Init
Page 9 and 10: Buczko et al. Abrupt vs. Diffuse In
Page 11 and 12: intensity (a.u.) 70 60 50 40 30 20
Page 13 and 14: site and momentum resolved DOS Si-L
Page 15 and 16: 0.5 nm nm Si Combining Theory and E
Page 17 and 18: Band Line-Up Si/SiO 2 Real-space ba
Page 19 and 20: Intensity Z-Contrast Ge/SiO Interfa
Page 21 and 22: Monte Carlo Results - Animation •
Page 23 and 24: 0.5 nm Si Intensity Si/SiO vs. Ge/S
Page 25 and 26: Conclusions 2 • Atomic-scale char
Page 27 and 28: I p ( ) ( ) 2 V = ∫ T , ( ) ( ) =
Page 29 and 30: The Molecular Transport Problem I E
Page 31 and 32: Accelerated Molecular Dynamics •
Page 33 and 34: Carbon Nanotube on Pt • From work
Page 35 and 36: Carbon Nanotube on Ti •Large rela
Page 37 and 38: Contact Dependence of I-V Curve for
Page 39 and 40: Contact Dependence of I-V Curve for
Page 41 and 42: Funding • Semiconductor Research
Page 43 and 44: Right: • Ti below 10 a.u. and abo
Page 45 and 46: The main peak in the X structure is
Page 47 and 48: Current (A)
Page 49 and 50: Previous calculations and new ones.
Page 51 and 52: MD smoothes out most of the conduct
Page 53 and 54:
MOSFET Scaling: Ultrashallow Juncti
Page 55 and 56:
Ab-Initio Calculations - Standard C
Page 57 and 58:
How To Find Migration Barriers I
Page 59 and 60:
Calculation of Diffusion Prefactors
Page 61 and 62:
T( o C) Reason for Deactivation - S
Page 63 and 64:
Cluster Formation - Reaction Barrie
Page 65 and 66:
Activation and Clusters 30 min anne
Page 67 and 68:
*A. Asenov Statistical Effects in N
Page 69 and 70:
Vacuum level E F Lead CNT VB CNT-FE
Page 71 and 72:
The main peak in the X structure is
Page 73:
PDOS for the relaxed CNT in line wi
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