Errata Sheet - Infineon
Errata Sheet - Infineon
Errata Sheet - Infineon
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Flash erase timings measured on actual device are as below<br />
Table 8 Actual Flash erase timings.<br />
Flash<br />
Micro Erase Time<br />
code<br />
version<br />
P-Flash, 2 MByte V11 52s [at cold temperature]<br />
45s [at room and above<br />
temperature]<br />
D-Flash, 64 Kbyte [Both<br />
Data Flash]<br />
V11 3.2s [at all temperature]<br />
<strong>Errata</strong> <strong>Sheet</strong><br />
Functional Deviations<br />
Maximum erase time at various CPU operating frequencies can be calculated<br />
according to the following table<br />
Table 9 Relative erase time increments.<br />
Frequency[MHz] Increment<br />
40 8%<br />
66 4%<br />
80 3%<br />
100 2%<br />
133 0%<br />
FLASH_TC.035 Flash programing time out of specification<br />
As per specification flash programing time specified is per page 5msec<br />
Where as actual programing time measured on the device is per page 5.5msec<br />
FLASH_TC.036 DFLASH Margin Control Register MARD<br />
The margin for the two banks of the Data Flash module (DFLASH) can only be<br />
selected for the complete DFLASH, and not separately for each DFLASH bank.<br />
TC1767, EES-AD, ES-AD, AD 38/73 Rel. 1.4, 11.12.2009