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Errata Sheet - Infineon

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Flash erase timings measured on actual device are as below<br />

Table 8 Actual Flash erase timings.<br />

Flash<br />

Micro Erase Time<br />

code<br />

version<br />

P-Flash, 2 MByte V11 52s [at cold temperature]<br />

45s [at room and above<br />

temperature]<br />

D-Flash, 64 Kbyte [Both<br />

Data Flash]<br />

V11 3.2s [at all temperature]<br />

<strong>Errata</strong> <strong>Sheet</strong><br />

Functional Deviations<br />

Maximum erase time at various CPU operating frequencies can be calculated<br />

according to the following table<br />

Table 9 Relative erase time increments.<br />

Frequency[MHz] Increment<br />

40 8%<br />

66 4%<br />

80 3%<br />

100 2%<br />

133 0%<br />

FLASH_TC.035 Flash programing time out of specification<br />

As per specification flash programing time specified is per page 5msec<br />

Where as actual programing time measured on the device is per page 5.5msec<br />

FLASH_TC.036 DFLASH Margin Control Register MARD<br />

The margin for the two banks of the Data Flash module (DFLASH) can only be<br />

selected for the complete DFLASH, and not separately for each DFLASH bank.<br />

TC1767, EES-AD, ES-AD, AD 38/73 Rel. 1.4, 11.12.2009

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