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In-situ XRD studies during growth of Ni-Ti SMA films and their complementary ex-situ characterization [153] N. Schell, W. Matz, F. Eichhorn, F. Berberich, Synchrotron radiation studies of thin films and implanted layers with the materials research endstation of ROBL, J. Alloys Compd. 328 (2001) 105-111. [154] G. Swislow, SPEC X-ray diffraction software (Certified scientific software), POB 390640, Cambridge, MA 01239, USA. [155] HUBER X-ray Diffraction Equipment, 83253 Rimsting, Germany, http://www.xhuber.com [156] N. Schell, J. von Borany, J. Hauser, A two magnetron sputter deposition chamber equipped with an additional ion gun for in situ observation of thin film growth and surface modification by Synchrotron Radiation Scattering, AIP conference proceedings 879 (2007) 1813-1816. [157] http://www.bede.co.uk [158] F. Golgberg, É.J. Knystautas, NiTi thin film characterization by Rutherford backscattering spectrometry, Mater. Sci. Eng. B 40 (1996) 185-189. [159] L.R. Doolittle, Algorithms for the rapid simulation of Rutherford Backscattering Spectra, Nucl. Instr. and Meth. B 9 (1985) 344-351. [160] L. Pereira, H. Águas, R. Miguel Martins, F. Braz Fernandes, E. Fortunato, R. Martins, Role of process and annealing conditions on the electro-optical performances of undoped and n-doped polysilicon grown by LPCVD, in Physics and Application of Disordered Materials, ed. by Popescu Mihai, 2002, 373-380. [161] http://pro.wanadoo.fr/carine.crystallography/index.html [162] T. Harada, H. Ohkoshi, Influence of MgO(100) substrate surfaces on epitaxial growth of Ti films, J. Cryst. Growth 173 (1997) 109-116. [163] H.W. Jang, H.C. Kang, D.Y. Noh, M.S. Yi, Crossover of the preferred growth orientation of AlN/Si(001) films during off-axis radio frequency sputter growth, J. Appl. Phys. 94 (2003) 2957-2961. [164] A. Ishida, K. Ogawa, M. Sato, S. Miyazaki, Microstructure of Ti-48.2 at. pct Ni shape memory thin films, Metall. Mater. Trans. A 28 (1997) 1985-1991. [165] W. Cai, X.L. Meng, L.C. Zhao, Recent development of TiNi-based shape memory alloys, Curr. Opin. Solid State Mater. Sci. 9 (2005) 296-302. [166] U. Falke, F. Fenske, S. Schulze, M. Hietschold, XTEM studies of nickel silicide growth on Si(100) using a Ni/Ti bilayer system, Phys. Stat. Sol. (a) 162 (1997) 615-621. [167] D.S. Grummon, J. Zhang, Stress in sputtered films of near-equiatomic TiNiX on (100) Si: Intrinsic and Extrinsic stresses and their modification by thermally activated mechanisms, Phys. Stat. Sol. (a) 186 (2001) 17-39. [168] A. Steegen, K. Maex, Silicide-induced stress in Si: origin and consequences for MOS technologies, Mater. Sci. Eng. R 38 (2002) 1-53. [169] C.J. Tsai, K.H. Yu, Stress evolution during isochronal annealing of Ni/Si system, Thin Solid Films 350 (1999) 91-95. References 219
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RUI MIGUEL DOS SANTOS MARTINS IN-SI
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ACKNOWLEDGEMENTS The research work
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At CENIMAT, Luís Pereira also carr
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SUMÁRIO O fabrico de películas fi
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LIST OF SYMBOLS AND ABREVIATIONS α
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TABLE OF CONTENTS Introduction ....
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LIST OF FIGURES Fig. 1.1: Power/wei
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Fig. 2.3: Calculated integrated pho
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Fig. 3.25: Pole figures of Ni-Ti B2
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Fig. 3.66: SAED pattern obtained on
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LIST OF TABLES Tab. 1.1: Factors af
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In-situ XRD studies during growth o
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