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PHYS07200604007 Manas Kumar Dala - Homi Bhabha National ...

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Introduction 2<br />

1.1 An overview<br />

The perovskite type manganites having general formula R 1−x A x MnO 3 (where R is a<br />

trivalent rare earth element like La, Pr, Nd. and A is a divalent alkaline earth element<br />

like Sr, Ca, Ba.) have been one of the interesting compounds among the transition<br />

metal oxide systems due to their intriguing physical property such as colossal magnetoresistance<br />

(CMR) [1, 2, 3]. CMR is defined as the colossal decrease of resistance by<br />

the application of magnetic field. These materials are insulators at high temperatures<br />

and poor metals at low temperatures. Accompanying this insulator-metal transition<br />

is a magnetic transition from a high temperature paramagnetic phase to a low temperature<br />

ferromagnetic phase. These transitions occurs around the same transition<br />

temperature T C . Applying a magnetic field around T C will greatly reduce the resistivity,<br />

i.e negative magnetoresistance effect. These materials were first described in<br />

1950 by Jonker and van Santen [4] in perovskite type manganites.<br />

One year later (1951), Zener [5, 6] explained this unusual correlation between<br />

magnetism and transport properties by introducing a novel concept, so-called ”Double<br />

exchange” mechanism (DE). The pioneering work of Zener was followed by Anderson<br />

and Hasegawa [7] in 1955 and de Gennes [8] in 1960. Double exchange theory<br />

argues that the electron hopping is related to the relative spin orientations of the<br />

neighbouring sites. Although it qualitatively explains the connection between the<br />

insulator metal and the magnetic transitions, it was noticed latter by A. J. Millis et.<br />

al. [9] that it fails to explain the quantitative change in resistivity and the very low<br />

T C . Thus it is believed that double-exchange mechanism is not enough to explain<br />

the CMR effect. Several mechanisms, such as electron-phonon interactions (the polaronic<br />

effect), electronic phase separation, charge and/or orbital ordering etc. have<br />

been proposed to account for the discrepancy. Although the detailed picture is still<br />

unclear, there seems to be a growing consensus that one or more of these additional<br />

effects probably exists, with the various phenomena both competing and cooperating<br />

with each other. This can lead to very rich and exotic behaviour, as observed in the<br />

manganites. This mixed valence manganites have been studied for more than five<br />

decades but are still considered modern materials because of their wide potential for<br />

technological applications. Potential applications of the CMR effect in these manganites<br />

include magnetic sensors, magnetoresistive read heads, magnetoresistive random<br />

access memory (MRAM) etc.

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