- Page 1 and 2: PISCES-2ET and Its Application Subs
- Page 3 and 4: Table of Contents Table of Contents
- Page 5 and 6: Table of Contents DOPING . . . . .
- Page 7 and 8: Table of Contents 15 Use of Mixed-M
- Page 9: PART I PISCES-2ET 2D Device Simulat
- Page 13 and 14: Introduction and Acknowledgment SRC
- Page 15 and 16: CHAPTER 2 DUET Carrier Transport Mo
- Page 17 and 18: DUET Carrier Transport Model N C
- Page 19 and 20: DUET Carrier Transport Model are al
- Page 21 and 22: DUET Carrier Transport Model κ n =
- Page 23 and 24: CHAPTER 3 Physical Models 3.1 Mobil
- Page 25 and 26: Physical Models be used instead wit
- Page 27 and 28: Physical Models 3.1.1.4 Arora’s D
- Page 29 and 30: Physical Models two such models ava
- Page 31 and 32: Physical Models There are now probl
- Page 33 and 34: Physical Models interface. All the
- Page 35 and 36: Physical Models µ ( N, T L , E ⊥
- Page 37 and 38: Physical Models 3.1.3.4 Local Field
- Page 39 and 40: Physical Models Table 3.11 Paramete
- Page 41 and 42: Physical Models where E t is the en
- Page 43 and 44: CHAPTER 4 Material Properties for H
- Page 45 and 46: Material Properties for Heterostruc
- Page 47 and 48: Material Properties for Heterostruc
- Page 49 and 50: Material Properties for Heterostruc
- Page 51 and 52: Material Properties for Heterostruc
- Page 53 and 54: CHAPTER 5 Numerical Techniques In t
- Page 55 and 56: Numerical Techniques and the only u
- Page 57 and 58: Numerical Techniques where J and th
- Page 59 and 60: Numerical Techniques (c) ρ 0 = τ
- Page 61 and 62:
Numerical Techniques 1 F n, 1→ 2
- Page 63 and 64:
Numerical Techniques 5.4 Newton Pro
- Page 65 and 66:
Numerical Techniques “tmpco” sp
- Page 67 and 68:
CHAPTER 6 Simulation Examples In th
- Page 69 and 70:
Simulation Examples $ Electrode: 1-
- Page 71 and 72:
Simulation Examples $ 0.12um of sil
- Page 73 and 74:
Simulation Examples $ $***********
- Page 75 and 76:
Simulation Examples $ ***** Define
- Page 77 and 78:
Simulation Examples Figure 6.6 Devi
- Page 79 and 80:
Simulation Examples $ ***** Electro
- Page 81 and 82:
Simulation Examples title AlInAs/Ga
- Page 83 and 84:
Simulation Examples $ Re-solve at t
- Page 85 and 86:
Simulation Examples V GS =-0.8V Fig
- Page 87 and 88:
APPENDIX A Fermi-Dirac Distribution
- Page 89 and 90:
Fermi-Dirac Distribution and Hetero
- Page 91 and 92:
Fermi-Dirac Distribution and Hetero
- Page 93 and 94:
Fermi-Dirac Distribution and Hetero
- Page 95 and 96:
Fermi-Dirac Distribution and Hetero
- Page 97 and 98:
APPENDIX B Mathematical Properties
- Page 99 and 100:
Mathematical Properties of Fermi In
- Page 101 and 102:
APPENDIX C Formulations in Previous
- Page 103 and 104:
References [1] R. Stratton, “Semi
- Page 105 and 106:
[27] S. M. Sze, ed. High-Speed Semi
- Page 107 and 108:
User’s Manual CARD FORMAT PISCES-
- Page 109 and 110:
card is encountered. The MATERIAL a
- Page 111 and 112:
CHECK COMMAND CHECK The CHECK card
- Page 113 and 114:
COMMENT COMMAND COMMENT The COMMENT
- Page 115 and 116:
CONTACT PARAMETERS ALL A logical fl
- Page 117 and 118:
CONTACT P.polysilicon A logical fla
- Page 119 and 120:
CONTOUR COMMAND CONTOUR The CONTOUR
- Page 121 and 122:
CONTOUR ALPHAN, ALPHAP Logical flag
- Page 123 and 124:
CONTOUR MIn.value, MAx.value Real n
- Page 125 and 126:
DEEPIMPURITY COMMAND DEEPIMPURITY T
- Page 127 and 128:
DOPING COMMAND DOPING The DOPING ca
- Page 129 and 130:
DOPING If = AScii: Infile = N.ty
- Page 131 and 132:
DOPING DOSe A real number parameter
- Page 133 and 134:
DOPING be included by concatenating
- Page 135 and 136:
DOPING DOP UNIF CONC=1E16 P.TYPE DO
- Page 137 and 138:
ELECTRODE COMMAND ELECTRODE The ELE
- Page 139 and 140:
ELECTRODE rather lattice temperatur
- Page 141 and 142:
ELIMINATE EXAMPLES ELIM Y.DIR IY.LO
- Page 143 and 144:
EXTRACT COMMAND EXTRACT The EXTRACT
- Page 145 and 146:
EXTRACT Regions An integer to ident
- Page 147 and 148:
IMPACT Crowell A logical flag to us
- Page 149 and 150:
INTERFACE COMMAND INTERFACE The INT
- Page 151 and 152:
LOAD COMMAND LOAD The LOAD card loa
- Page 153 and 154:
LOAD LOAD IN1F=SOL1.IN IN2F=SOL2.IN
- Page 155 and 156:
LOG Ivfile or Outfile Character str
- Page 157 and 158:
MATERIAL GCb = GVb = EDb = EAb =
- Page 159 and 160:
MATERIAL NUmber or Region An intege
- Page 161 and 162:
MESH COMMAND MESH The MESH card eit
- Page 163 and 164:
MESH Elec.bot A logical flag to add
- Page 165 and 166:
MESH several regions of the same ma
- Page 167 and 168:
METHOD COMMAND METHOD The METHOD ca
- Page 169 and 170:
METHOD which the norm from the prev
- Page 171 and 172:
METHOD decrease by at least LUcrit
- Page 173 and 174:
METHOD and the Poisson error tolera
- Page 175 and 176:
MOBILITY PARAMETERS Alpha Real numb
- Page 177 and 178:
MOBILITY EXP.Eper Real number param
- Page 179 and 180:
MOBILITY 4 4.2×10 ) in Eq. (3.15)
- Page 181 and 182:
MODELS numerical parameters: TEmper
- Page 183 and 184:
MODELS CONSrh A logical flag to spe
- Page 185 and 186:
MODELS energy dependent models avai
- Page 187 and 188:
MODELS OX.Left, OX.Right, OX.Bottom
- Page 189 and 190:
MODELS ionization model IMP.JT for
- Page 191 and 192:
OPTIONS G.debug (Debug), N.debug Lo
- Page 193 and 194:
PLOT.1D COMMAND PLOT.1D The PLOT.1D
- Page 195 and 196:
PLOT.1D BAND.Val A logical flag for
- Page 197 and 198:
PLOT.1D NO.Clear Indicates that the
- Page 199 and 200:
PLOT.1D capacitances (C11, C12, C21
- Page 201 and 202:
PLOT.1D PLOT.1D INFIL=FILE.AC X.AXI
- Page 203 and 204:
PLOT.2D PARAMETERS Crosses A logica
- Page 205 and 206:
PLOT.2D Pause A logical flag causin
- Page 207 and 208:
PRINT PARAMETERS Current A logical
- Page 209 and 210:
PRINT EXAMPLES PRINT POINTS IX.LO=1
- Page 211 and 212:
REGION mole spec: XMole = YMole =
- Page 213 and 214:
REGION XInitial, XEnd, XSlope (YIni
- Page 215 and 216:
REGION REGION NUM=3 IX.L=1 IX.H=40
- Page 217 and 218:
REGRID files: Outfile = AScii = D
- Page 219 and 220:
REGRID LOCaldop A logical flag rela
- Page 221 and 222:
REGRID EXAMPLES REGRID LOG DOPING S
- Page 223 and 224:
SOLVE ac: {{ AC.analysis = FRequen
- Page 225 and 226:
SOLVE FStep, MUlt.freq, NFstep The
- Page 227 and 228:
SOLVE PROject A logical flag to ind
- Page 229 and 230:
SOLVE EXAMPLES SOLVE INIT OUTF=OUT0
- Page 231 and 232:
SOLVE ramp is at t = 45ns). The dev
- Page 233 and 234:
SPREAD PARAMETERS Encroach A real n
- Page 235 and 236:
SPREAD Y.M N=5 L=0 Y.M N=20 L=1 R=1
- Page 237 and 238:
SYMBOLIC PARAMETERS Carriers An int
- Page 239 and 240:
SYMBOLIC SYMBOLIC NEWTON CARR=2 INF
- Page 241 and 242:
VECTOR COMMAND VECTOR The VECTOR ca
- Page 243 and 244:
X.MESH, Y.MESH COMMAND X.MESH, Y.ME
- Page 245:
PART II Curve Tracer Stephen G. Bee
- Page 248 and 249:
236 Curve Tracer
- Page 250 and 251:
SECTION 8 Shell Command Line Usage:
- Page 252 and 253:
Trace File 9.1 CONTROL Card 9.1.1 D
- Page 254 and 255:
Trace File electrodes in a simulati
- Page 256 and 257:
Trace File last two solution points
- Page 258 and 259:
Trace File 9.4 SOLVE Card 9.4.1 Des
- Page 260 and 261:
SECTION 10 Input Deck Specification
- Page 262 and 263:
SECTION 11 Data Format in Output Fi
- Page 264 and 265:
SECTION 12 Comments As of January 1
- Page 266 and 267:
Examples title NPN Simulation for T
- Page 268 and 269:
Examples Soln #Vctrl Ictrl Vcurr Ic
- Page 270 and 271:
Examples the open base contact for
- Page 272 and 273:
Examples $*** regions region num=1
- Page 274 and 275:
Examples Figure 13.8 Drain current
- Page 276 and 277:
Examples [1] R.J.G. Goossens, S.G.
- Page 279 and 280:
Acknowledgment The prototype to the
- Page 281 and 282:
CHAPTER 14 Mixed-Mode Circuit and D
- Page 283 and 284:
Mixed-Mode Circuit and Device Simul
- Page 285 and 286:
Mixed-Mode Circuit and Device Simul
- Page 287 and 288:
Mixed-Mode Circuit and Device Simul
- Page 289 and 290:
CHAPTER 15 Use of Mixed-Mode Simula
- Page 291 and 292:
Use of Mixed-Mode Simulation mname
- Page 293 and 294:
Use of Mixed-Mode Simulation COMMAN
- Page 295 and 296:
Use of Mixed-Mode Simulation dtype
- Page 297 and 298:
Use of Mixed-Mode Simulation so tha
- Page 299 and 300:
Use of Mixed-Mode Simulation parame
- Page 301 and 302:
Use of Mixed-Mode Simulation Althou
- Page 303 and 304:
Use of Mixed-Mode Simulation The bi
- Page 305 and 306:
CHAPTER 16 Examples 16.1 Introducti
- Page 307 and 308:
Examples I gate + MESFET I drain +
- Page 309 and 310:
Examples VDD C L L C R WB WB CS CS:
- Page 311 and 312:
Examples * data line level sources
- Page 313 and 314:
Examples cathode contact emitted li
- Page 315 and 316:
Examples parameter is set low becau
- Page 317 and 318:
CHAPTER 17 System Reconfiguration f
- Page 319 and 320:
System Reconfiguration for a Differ
- Page 321 and 322:
System Reconfiguration for a Differ
- Page 323 and 324:
System Reconfiguration for a Differ
- Page 325 and 326:
System Reconfiguration for a Differ
- Page 327 and 328:
System Reconfiguration for a Differ
- Page 329:
References References [1] Yu, Zhipi