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PISCES-2ET and Its Application Subsystems - Stanford Technology ...

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CHAPTER 1<br />

Introduction <strong>and</strong><br />

Acknowledgment<br />

<strong>PISCES</strong>-<strong>2ET</strong> is a dual energy transport (for carrier temperatures <strong>and</strong> lattice thermal diffusion) version<br />

of <strong>PISCES</strong>-II developed based on <strong>Stanford</strong>’s 9009 version <strong>and</strong> Intel’s enhanced 8830 version. This<br />

work is completed under the support of SRC (Semiconductor Research Corp.), ARO (Army Research<br />

Office), <strong>and</strong> ARPA (Advanced Research Projects Agency) <strong>and</strong> with close collaboration from Intel <strong>and</strong><br />

HP. There are many new features available in the <strong>2ET</strong> version, predominately, the capabilities to<br />

simulate the carrier <strong>and</strong> lattice temperatures <strong>and</strong> heterostructures in compound semiconductors. Hence,<br />

various non-stationary phenomena such as hot carrier effects <strong>and</strong> velocity overshoot can be analyzed<br />

using this program. The electrical behavior of optoelectronic devices can also be simulated with<br />

reasonable accuracy. Most of the material parameters have been calibrated <strong>and</strong> thoroughly surveyed<br />

with the help from industry. Other new features which can be found in <strong>PISCES</strong>-<strong>2ET</strong> include:<br />

• High <strong>and</strong> zero frequency small signal AC analysis<br />

• Improved initial guess using Newton projection method<br />

• Carrier energy dependent mobility <strong>and</strong> impact ionization models<br />

• About ten different local <strong>and</strong> non-local (electric) field dependent mobility models<br />

• Parameterization of array sizes for expansion of maximum grid number<br />

• ASCII <strong>and</strong> binary exchange data format with process simulation programs<br />

<strong>PISCES</strong>-<strong>2ET</strong> – 2D Device Simulation for Si <strong>and</strong> Heterostructures 1

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