PISCES-2ET and Its Application Subsystems - Stanford Technology ...

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Copyright 1994 by The Board of Trustees of Leland Stanford Junior University. All rights reserved. SUPREM, SUPREM-III, SUPREM-IV, and PISCES, PISCES-II, PISCES-2ET are registered trademarks of Stanford University.
Table of Contents Table of Contents PART I PISCES-2ET 2D Device Simulator 1 Introduction and Acknowledgment . . . . . . . . . . . . . . . . . . . . . . . . . .1 2 DUET Carrier Transport Model . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5 2.1 Boltzmann Transport Equation and Distribution Function. . . . . . . . . . . . . .6 2.2 Energy Balance and Thermal Diffusion Equations . . . . . . . . . . . . . . . . . . .7 2.3 Boundary Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 3 Physical Models . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 3.1 Mobility Models . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 3.1.1 Low field Mobility Models . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 3.1.2 Mobility Reduction due to Transverse Field . . . . . . . . . . . . . . . . . . . . . . . . 18 3.1.3 Mobility Dependency on Longitudinal Field/Carrier Temperature. . . . . . . 24 3.2 Thermal Conductivity Formula . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .27 3.3 Recombination and Generation Mechanisms . . . . . . . . . . . . . . . . . . . . . . .28 3.3.1 Impact Ionization Models . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 3.3.2 Photo-Generation. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 3.3.3 SRH Recombination . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 3.3.4 Auger Recombination . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 4 Material Properties for Heterostructures . . . . . . . . . . . . . . . . . . . . .33 4.1 Material Parameters for Device Simulation . . . . . . . . . . . . . . . . . . . . . . . .33 4.2 Interpolation Scheme for Composition Dependence . . . . . . . . . . . . . . . . .34 4.3 Data for Material Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .35 4.3.1 Parameters for Base Materials . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35 4.4 Band Structure Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .37 4.4.1 Bandgap . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37 4.4.2 Electron Affinity and Band-edge Offsets. . . . . . . . . . . . . . . . . . . . . . . . . . . 38 4.4.3 Effective Mass and Density of States . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39 PISCES-2ET and Its Application Subsystems i
Page 1: PISCES-2ET and Its Application Subs
Page 5 and 6: Table of Contents DOPING . . . . .
Page 7 and 8: Table of Contents 15 Use of Mixed-M
Page 9: PART I PISCES-2ET 2D Device Simulat
Page 12 and 13: Introduction and Acknowledgment Thi
Page 14 and 15: Introduction and Acknowledgment 4 P
Page 16 and 17: DUET Carrier Transport Model 2.1 Bo
Page 18 and 19: DUET Carrier Transport Model genera
Page 20 and 21: DUET Carrier Transport Model ∂w -
Page 22 and 23: DUET Carrier Transport Model 2.3 Bo
Page 24 and 25: Physical Models µ ( N, T L , E ⊥
Page 26 and 27: Physical Models where α( N ) ( N
Page 28 and 29: Physical Models 3.1.1.6 “Carrier-
Page 30 and 31: Physical Models 3.1.2.2 Lombardi’
Page 32 and 33: Physical Models 1 E ⊥, eff = ε s
Page 34 and 35: Physical Models SiO 2 interface. To
Page 36 and 37: Physical Models monotonically in a
Page 38 and 39: Physical Models 3.3 Recombination a
Page 40 and 41: Physical Models The third modeling
Page 42 and 43: Physical Models 32 PISCES-2ET - 2D
Page 44 and 45: Material Properties for Heterostruc
Page 52 and 53:
Material Properties for Heterostruc
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Numerical Techniques p has the dime
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Numerical Techniques Instead of emp
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Numerical Techniques needed during
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Numerical Techniques be applied to
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Numerical Techniques 1 s p, 1 → 2
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Numerical Techniques c equal to 1,
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Numerical Techniques 56 PISCES-2ET
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Simulation Examples It can be clear
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Simulation Examples 10 -1 10 -2 10
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Simulation Examples plot.1d dop log
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Simulation Examples guarantees the
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Simulation Examples elec num=2 ix.l
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Simulation Examples title LED Simul
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Simulation Examples Figure 6.9 Simu
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Simulation Examples $ doping region
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Simulation Examples Figure 6.11 Reg
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Simulation Examples 76 PISCES-2ET -
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Fermi-Dirac Distribution and Hetero
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Mathematical Properties of Fermi In
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Mathematical Properties of Fermi In
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Formulations in Previous PISCES-II
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[13] H. Shin, G. M. Yeric, A. F. Ta
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[41] Z. Yu, R.W. Dutton, and M. Van
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string, indicates TRUE while a logi
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Table M.1 Abbreviation for units us
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CHECK Samemesh A logical flag indic
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CONTACT COMMAND CONTACT The CONTACT
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CONTACT MO.disilicide A logical fla
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CONTACT EXAMPLES CONTACT ALL NEUTRA
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CONTOUR J.Hole = | J.Displa = | J
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CONTOUR Flowlines A logical flag fo
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CONTOUR TEMP.Elec, TEMP.Hole, TEMP.
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DEEPIMPURITY EXAMPLES DEEPIMP UNIF
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DOPING DOSe = CHaracter = or COnc
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DOPING AScii without SUprem3 allows
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DOPING Lat.char A real number for t
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DOPING X.Left, X.Right, Y.Top, Y.Bo
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DOPING COM *** COLLECTOR *** DOP RE
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ELECTRODE the device structure. If
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ELIMINATE COMMAND ELIMINATE The ELI
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END (QUIT) COMMAND END (QUIT) The E
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EXTRACT bounded region designated b
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IMPACT COMMAND IMPACT The IMPACT ca
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INCLUDE COMMAND INCLUDE The INCLUDE
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INTERFACE Qf Real number for the in
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LOAD INFile or IN1file, IN2file Cha
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LOG COMMAND LOG The LOG card allows
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MATERIAL COMMAND MATERIAL The MATER
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MATERIAL ETrap Trap level = E t -E
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MATERIAL Table M.2 material paramet
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MESH smoothing key: SMooth.key = d
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MESH OUTFile Specifies the name of
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MESH MESH GEOM INF=mos.geom POLY.EL
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METHOD Gemmul iteration) SInglepois
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METHOD DVlimit Real number paramete
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METHOD continuity equation is only
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MOBILITY COMMAND MOBILITY The MOBIL
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MOBILITY CNPre, CPPre Real number p
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MOBILITY Qss.conc Real number param
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MODELS COMMAND MODELS The MODELS ca
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MODELS ARora A logical flag specify
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MODELS ENgy.mob) by field-temperatu
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MODELS IMP.TP A logical flag to ind
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MODELS TAU.WN, TAU.WP Real number p
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OPTIONS COMMAND OPTIONS The OPTIONS
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OPTIONS file will be in a format sp
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PLOT.1D or TEMP.Hol = | TEMP.Lat =
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PLOT.1D INFile Character string for
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PLOT.1D Spline, NSpline The Spline
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PLOT.1D X.Start, X.End, Y.Start, Y.
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PLOT.2D COMMAND PLOT.2D The PLOT.2D
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PLOT.2D L.Elect, L.Deple, L.Junct,
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PRINT COMMAND PRINT The PRINT card
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PRINT POints A logical flag to prin
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REGION COMMAND REGION The REGION ca
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REGION NItride or SI3n4 A logical f
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REGION EXAMPLES REGION NUM=1 IX.LO=
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REGRID COMMAND REGRID The REGRID ca
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REGRID DOPFile Character string for
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REGRID always generated to assist f
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SOLVE COMMAND SOLVE The SOLVE card
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SOLVE BAnd A logical flag to includ
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SOLVE MAx.inner Integer parameter f
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SOLVE TOlerance Real number paramet
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SOLVE SOLVE V1=0 V2=0 V3=1 VSTEP=.5
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SPREAD COMMAND SPREAD The SPREAD ca
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SPREAD Vol.ratio Real number parame
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SYMBOLIC COMMAND SYMBOLIC The SYMBO
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SYMBOLIC Min.degree A logical flag
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TITLE COMMAND TITLE The TITLE card
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VECTOR J.Conduc, J.Displa, J.Electr
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X.MESH, Y.MESH Ratio Real number pa
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Acknowledgment This project was sup
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SECTION 7 Introduction In Technolog
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SECTION 9 Trace File The trace spec
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Trace File which the curve tracing
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Trace File 9.3.2 Syntax Simulations
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Trace File none of the solutions is
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Trace File Tracer run in which volt
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Input Deck Specifications inputfile
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Data Format in Output Files with an
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SECTION 13 Examples In each of the
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Examples fixed num = 1 type=voltage
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Examples Collector Current / amps/
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Examples title mes.pis mesh nx=53 n
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Examples title mesvg.5.pis option n
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Examples #Soln #Vctrl Ictrl I2 1 0.
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PART III Mixed-Mode Device/Circuit
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266 Mixed-Mode Device/Circuit Simul
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Mixed-Mode Circuit and Device Simul
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Use of Mixed-Mode Simulation COMMAN
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Use of Mixed-Mode Simulation Electr
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Use of Mixed-Mode Simulation For th
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Use of Mixed-Mode Simulation vmax T
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Use of Mixed-Mode Simulation curren
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Use of Mixed-Mode Simulation 15.3 R
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Use of Mixed-Mode Simulation soluti
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Use of Mixed-Mode Simulation prl, n
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Examples V dd (1) * cmos inverter e
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Examples * S11 x S22 Figure 16.3 S-
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Examples * supply line Vdd 1 0 5 *
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Examples Data Lines 5 4 3 2 1 0 C C
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Examples +5 V Vcc 0.1 µF 10 µF 33
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Examples 120 100 80 60 I hp1 (mA) 4
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System Reconfiguration for a Differ
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