PISCES-2ET and Its Application Subsystems - Stanford Technology ...

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Introduction and Acknowledgment This document is organized as follows. CHAPTER 2 discusses the theoretical background for DUET transport model, which is based on the moment approach to solving Boltzmann Transport Equation (BTE) and is applicable to heterostructure analysis also. In CHAPTER 3, physical models used in the program are described. The emphasis is on the various mobility models, many parameters of which have been calibrated by industrial users. Material parameters for four common compound semiconductors, namely Ge x Si 1-x , Al x Ga 1-x As, Al x In 1-x As, and Ga x In 1-x As y P 1-y , used in heterostructure and optoelectronic devices are discussed in CHAPTER 4. Discussion of carrier transport in heterostructures and issues related to Fermi-Dirac (FD) statistics are delayed until APPENDIX A to provide a complete picture of DUET model yet not to inundate the concise forms in the main text with complex coefficients required by using the FD distribution. In CHAPTER 5, relevant numerical techniques are presented, including the algorithms for small signal AC analyses. Besides, the details in parameterization of global arrays used in the device solver are provided. Finally four simulation examples are included in CHAPTER 6. The first two examples compare the simulated results to the experimental data regarding the carrier temperature effects in FET structures to establish the confidence level of the energy transport model used in the code. The other two examples are about the simulation of heterostructures including one application in a realistic, cylindrically symmetric LED (light emitting diode) structure. Two short appendices, one dealing with the mathematical properties of Fermi integral (APPENDIX B) and the other listing several expressions referred to in this document from the previous PISCES reports (APPENDIX C), are included for users’ reference. Finally a user’s manual provides the detailed syntax and usage of all commands available in the program. Authors are grateful to many contributions from both academia and industry during the development of PISECE-2ET. The DUET transport model has been developed in collaboration with Prof. K. Hess’ group in University of Illinois at Urbana. One of the key developers, Dr. E. Kan, who recently joined our group at Stanford, made numerous contributions to the code including helping parameterize the data structure and model calibration. Drs. T. Thurgate of Intel and M. Tan of HP have been working closely with us from the very beginning of this project and provided access to their codes and experimental data. Various industrial connections under the sponsorship of SRC are greatly appreciated, including, but by no means being complete, Drs. R. Lowther of Harris Semiconductor, I. Lim of Motorola, and K. L. Chen of OCD in HP. Dr. K. Wu of this group at Stanford developed the algorithm for high frequency small signal AC analysis, and Mr. A. Mujtaba helped review the section of mobility models. Their contributions are greatly appreciated. Finally, the continuous funding from 2 PISCES-2ET – 2D Device Simulation for Si and Heterostructures
Introduction and Acknowledgment SRC through contract #SRC 93-SJ-116 is one of the key factors to the success of this program development and the grant from ARO through contract DAAL 03-91-G-0152 plays a critical role in extending the simulation capabilities from silicon to compound materials and heterostructure. The GaAs work was supported through ARPA contract DAAL 01-91-K-0145. Their support are gratefully acknowledged. PISCES-2ET – 2D Device Simulation for Si and Heterostructures 3
Page 1 and 2: PISCES-2ET and Its Application Subs
Page 3 and 4: Table of Contents Table of Contents
Page 5 and 6: Table of Contents DOPING . . . . .
Page 7 and 8: Table of Contents 15 Use of Mixed-M
Page 9: PART I PISCES-2ET 2D Device Simulat
Page 14 and 15: Introduction and Acknowledgment 4 P
Page 16 and 17: DUET Carrier Transport Model 2.1 Bo
Page 18 and 19: DUET Carrier Transport Model genera
Page 20 and 21: DUET Carrier Transport Model ∂w -
Page 22 and 23: DUET Carrier Transport Model 2.3 Bo
Page 24 and 25: Physical Models µ ( N, T L , E ⊥
Page 26 and 27: Physical Models where α( N ) ( N
Page 28 and 29: Physical Models 3.1.1.6 “Carrier-
Page 30 and 31: Physical Models 3.1.2.2 Lombardi’
Page 32 and 33: Physical Models 1 E ⊥, eff = ε s
Page 34 and 35: Physical Models SiO 2 interface. To
Page 36 and 37: Physical Models monotonically in a
Page 38 and 39: Physical Models 3.3 Recombination a
Page 40 and 41: Physical Models The third modeling
Page 42 and 43: Physical Models 32 PISCES-2ET - 2D
Page 44 and 45: Material Properties for Heterostruc
Page 54 and 55: Numerical Techniques p has the dime
Page 56 and 57: Numerical Techniques Instead of emp
Page 58 and 59: Numerical Techniques needed during
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Numerical Techniques 1 s p, 1 → 2
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Numerical Techniques c equal to 1,
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Numerical Techniques 56 PISCES-2ET
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Simulation Examples It can be clear
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Simulation Examples 10 -1 10 -2 10
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Simulation Examples plot.1d dop log
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Simulation Examples guarantees the
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Simulation Examples elec num=2 ix.l
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Simulation Examples title LED Simul
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Simulation Examples Figure 6.9 Simu
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Simulation Examples $ doping region
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Simulation Examples Figure 6.11 Reg
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Simulation Examples 76 PISCES-2ET -
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Fermi-Dirac Distribution and Hetero
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Mathematical Properties of Fermi In
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Mathematical Properties of Fermi In
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Formulations in Previous PISCES-II
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[13] H. Shin, G. M. Yeric, A. F. Ta
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[41] Z. Yu, R.W. Dutton, and M. Van
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string, indicates TRUE while a logi
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Table M.1 Abbreviation for units us
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CHECK Samemesh A logical flag indic
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CONTACT COMMAND CONTACT The CONTACT
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CONTACT MO.disilicide A logical fla
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CONTACT EXAMPLES CONTACT ALL NEUTRA
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CONTOUR J.Hole = | J.Displa = | J
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CONTOUR Flowlines A logical flag fo
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CONTOUR TEMP.Elec, TEMP.Hole, TEMP.
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DEEPIMPURITY EXAMPLES DEEPIMP UNIF
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DOPING DOSe = CHaracter = or COnc
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DOPING AScii without SUprem3 allows
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DOPING Lat.char A real number for t
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DOPING X.Left, X.Right, Y.Top, Y.Bo
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DOPING COM *** COLLECTOR *** DOP RE
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ELECTRODE the device structure. If
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ELIMINATE COMMAND ELIMINATE The ELI
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END (QUIT) COMMAND END (QUIT) The E
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EXTRACT bounded region designated b
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IMPACT COMMAND IMPACT The IMPACT ca
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INCLUDE COMMAND INCLUDE The INCLUDE
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INTERFACE Qf Real number for the in
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LOAD INFile or IN1file, IN2file Cha
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LOG COMMAND LOG The LOG card allows
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MATERIAL COMMAND MATERIAL The MATER
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MATERIAL ETrap Trap level = E t -E
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MATERIAL Table M.2 material paramet
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MESH smoothing key: SMooth.key = d
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MESH OUTFile Specifies the name of
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MESH MESH GEOM INF=mos.geom POLY.EL
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METHOD Gemmul iteration) SInglepois
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METHOD DVlimit Real number paramete
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METHOD continuity equation is only
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MOBILITY COMMAND MOBILITY The MOBIL
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MOBILITY CNPre, CPPre Real number p
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MOBILITY Qss.conc Real number param
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MODELS COMMAND MODELS The MODELS ca
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MODELS ARora A logical flag specify
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MODELS ENgy.mob) by field-temperatu
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MODELS IMP.TP A logical flag to ind
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MODELS TAU.WN, TAU.WP Real number p
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OPTIONS COMMAND OPTIONS The OPTIONS
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OPTIONS file will be in a format sp
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PLOT.1D or TEMP.Hol = | TEMP.Lat =
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PLOT.1D INFile Character string for
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PLOT.1D Spline, NSpline The Spline
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PLOT.1D X.Start, X.End, Y.Start, Y.
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PLOT.2D COMMAND PLOT.2D The PLOT.2D
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PLOT.2D L.Elect, L.Deple, L.Junct,
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PRINT COMMAND PRINT The PRINT card
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PRINT POints A logical flag to prin
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REGION COMMAND REGION The REGION ca
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REGION NItride or SI3n4 A logical f
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REGION EXAMPLES REGION NUM=1 IX.LO=
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REGRID COMMAND REGRID The REGRID ca
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REGRID DOPFile Character string for
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REGRID always generated to assist f
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SOLVE COMMAND SOLVE The SOLVE card
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SOLVE BAnd A logical flag to includ
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SOLVE MAx.inner Integer parameter f
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SOLVE TOlerance Real number paramet
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SOLVE SOLVE V1=0 V2=0 V3=1 VSTEP=.5
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SPREAD COMMAND SPREAD The SPREAD ca
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SPREAD Vol.ratio Real number parame
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SYMBOLIC COMMAND SYMBOLIC The SYMBO
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SYMBOLIC Min.degree A logical flag
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TITLE COMMAND TITLE The TITLE card
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VECTOR J.Conduc, J.Displa, J.Electr
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X.MESH, Y.MESH Ratio Real number pa
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Acknowledgment This project was sup
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SECTION 7 Introduction In Technolog
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SECTION 9 Trace File The trace spec
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Trace File which the curve tracing
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Trace File 9.3.2 Syntax Simulations
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Trace File none of the solutions is
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Trace File Tracer run in which volt
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Input Deck Specifications inputfile
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Data Format in Output Files with an
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SECTION 13 Examples In each of the
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Examples fixed num = 1 type=voltage
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Examples Collector Current / amps/
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Examples title mes.pis mesh nx=53 n
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Examples title mesvg.5.pis option n
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Examples #Soln #Vctrl Ictrl I2 1 0.
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PART III Mixed-Mode Device/Circuit
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266 Mixed-Mode Device/Circuit Simul
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Mixed-Mode Circuit and Device Simul
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Use of Mixed-Mode Simulation COMMAN
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Use of Mixed-Mode Simulation Electr
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Use of Mixed-Mode Simulation For th
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Use of Mixed-Mode Simulation vmax T
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Use of Mixed-Mode Simulation curren
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Use of Mixed-Mode Simulation 15.3 R
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Use of Mixed-Mode Simulation soluti
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Use of Mixed-Mode Simulation prl, n
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Examples V dd (1) * cmos inverter e
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Examples * S11 x S22 Figure 16.3 S-
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Examples * supply line Vdd 1 0 5 *
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Examples Data Lines 5 4 3 2 1 0 C C
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Examples +5 V Vcc 0.1 µF 10 µF 33
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Examples 120 100 80 60 I hp1 (mA) 4
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System Reconfiguration for a Differ
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