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PISCES-2ET and Its Application Subsystems - Stanford Technology ...

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DUET Carrier Transport Model<br />

are all defined <strong>and</strong> can be evaluated from the even part of the distribution function f in the momentum<br />

space ( f 0 in Eq. (2.1) for DUET model), <strong>and</strong> are thus related to each other. For continuity of<br />

presentation, the expressions for these coefficients are not given here, rather they can be found in<br />

APPENDIX A. We now consider the rates for energy generation g w <strong>and</strong> loss r w , from which<br />

u w = r w – g w<br />

(2.11)<br />

r w is related to both carrier recombination <strong>and</strong> energy transferring from carriers to the lattice. At<br />

present, three recombination mechanisms are considered in the model <strong>and</strong> they are Shockley-Reed-<br />

Hall (SRH), Auger, <strong>and</strong> radiative recombinations. For g w , only the impact ionization, which is the<br />

inverse process of Auger recombination, is taken into account 1 . With all relevant mechanisms<br />

identified, we are able to list the complete set of equations for the DUET model <strong>and</strong> their auxiliary<br />

expressions as follows:<br />

Poisson’s equation:<br />

+ –<br />

∇⋅ (–<br />

ε∇ψ)<br />

= q( p – n + N D – N A )<br />

where dielectric constant, ε , is not to be confused with carrier kinetic energy, ε .<br />

(2.12)<br />

Carrier continuity equations:<br />

∂n<br />

-----<br />

∂t<br />

1<br />

--∇ ⋅ j<br />

q n – u<br />

∂p 1<br />

----- = –--∇ ⋅ j<br />

∂t q p – u<br />

where u is the net recombination rate of electron-hole pairs.<br />

=<br />

(2.13)<br />

(2.14)<br />

Carrier (kinetic) energy balance equations:<br />

∂w<br />

-------- n<br />

= – ∇ ⋅ s<br />

∂t<br />

n + j n ⋅ E n – u wn<br />

(2.15)<br />

1. Thus, photo-generation as discussed in Section 3.3.2 applies only to the conservation of carrier<br />

population.<br />

<strong>PISCES</strong>-<strong>2ET</strong> – 2D Device Simulation for Si <strong>and</strong> Heterostructures 9

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