PISCES-2ET and Its Application Subsystems - Stanford Technology ...

Material Properties for Heterostructures
4.3 Data for Material Parameters
4.3.1 Parameters for Base Materials
Currently PISCES-2ET can handle four material systems: Ge x Si 1-x , Al x Ga 1-x As, Al x In 1-x As, and
Ga x In 1-x As y P 1-y . Those compound materials can be derived from four types of base materials: Si,
GaAs, InAs, and InP. A partial list of their respective material parameters are given in th following.
Table 4.1
E g
†
E g
α
β
ε 0
ε ∞
χ
m n
*
*
m lh
*
m hh
N C
†
N V
†
µ n
†
µ p
†
†
v sat
Si GaAs InAs InP units
1.08 [23] 1.424 [24] 0.359 [28] 1.347 [26] eV
1.17 [24] 1.519 [24] 0.4105 [28] 1.4205 eV
4.73 [24] 5.405 [24] 3.35 [29] 4.1 10 -4 eV/K
636 [24] 204 [24] 248 [29] 136 K
11.8 [25] 13.1 [24] 14.55 [29] 12.4 [26]
10.9 12.25 [28] 9.55 [26]
4.17 [23] 4.07 [24] 4.9 [29] 4.4 [29] eV
1.08 [25] 0.067 [26] 0.023 [26] 0.08 [26]
0.16 [24] 0.074 [26] 0.024 [29] 0.089 [26]
0.49 [24] 0.62 [26] 0.41 [29] 0.85 [26]
19
17
m 0
m 0
m 0
2.8×10 [24] 4.42×10 8.72×10 5.66×10 cm – 3
19
18
1.04×10 [24] 8.47×10 6.66×10 2.03×10 cm – 3
1500 [24] 8500 [24] 22600 [29] 4500 [29] cm 2 /V.s
450 [24] 400 [24] 250 [27] 150 [29] cm 2 /V.s
7
7
16
18
1.5×10 [27] 1×10 [23] 2.5×10
[23] cm/ s
7
17
19
† T L = 300 K
The lattice temperature dependent energy bandgap is modeled as follows:
PISCES-2ET – 2D Device Simulation for Si and Heterostructures 35