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PISCES-2ET and Its Application Subsystems - Stanford Technology ...

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Physical Models<br />

be used instead with this option. The range of the data for doping concentrations in silicon is from<br />

14<br />

21<br />

N = 1×10<br />

to 1×10 cm – 3 . If the doping concentration falls out of the above range then the closest<br />

boundary value for the mobility is used, otherwise the following interpolation scheme is applied.<br />

µ 0 ( N 2 )–<br />

µ 0 ( N 1 ) N<br />

µ 0 ( N ) = µ 0 ( N 1 ) + ---------------------------------------- log------<br />

(3.3)<br />

log( N 2 ⁄ N 1 ) N 1<br />

where N 2 > N > N 1 . This model is valid for silicon only. Note that if any of the following parameters:<br />

ccsmob, analytic, arora, <strong>and</strong> user1, is used with or without conmob specified in the model<br />

card, that model takes precedence <strong>and</strong> the precedency of these models is user1, arora, analytic,<br />

<strong>and</strong> ccsmob with each preceding one overriding the trailing ones.<br />

3.1.1.3 Analytical Doping Dependent Mobility Model<br />

This model is invoked by parameter analytic in the model card. The formulation for this model<br />

is as follows:<br />

µ 0 ( N,<br />

T L ) = γµ surf ( N,<br />

T L ) + ( 1 – γ )µ bulk ( N,<br />

T L )<br />

(3.4)<br />

where γ is a coefficient with value between 0 <strong>and</strong> 1 depending on the relative distance from the surface/<br />

interface, µ surf<br />

<strong>and</strong> µ bulk<br />

are mobilities in the surface layer <strong>and</strong> bulk, respectively. γ is determined by<br />

an ERFC function as follows:<br />

γ 0.5 erfc y – y int – d<br />

= ⋅ ⎛-------------------------<br />

⎞<br />

(3.5)<br />

⎝ λ ⎠<br />

where the silicon <strong>and</strong> SiO 2 interface is assumed to be parallel to the x-axis, is the y coordinate of<br />

the interface, d <strong>and</strong> λ are two parameters: one for offset <strong>and</strong> the other for the characteristic length.<br />

Their default values are d = 0.06µ <strong>and</strong> λ = 0.03µ , <strong>and</strong> both can be accessed by users via parameters<br />

int.off <strong>and</strong> char.int in mobility card, respectively.<br />

The surface <strong>and</strong> bulk mobilities have the same form of dependence on N <strong>and</strong> T L<br />

as follows:<br />

y int<br />

µ ( N,<br />

T L )<br />

T L<br />

d<br />

---------------------- 1 + α( N )<br />

µ α ( N )<br />

=<br />

+ ---------------------- max 1 + α( N )<br />

µ min<br />

(3.6)<br />

<strong>PISCES</strong>-<strong>2ET</strong> – 2D Device Simulation for Si <strong>and</strong> Heterostructures 15

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