PISCES-2ET and Its Application Subsystems - Stanford Technology ...

Physical Models
where E t
is the energy level for the recombination centers and E i
is the intrinsic Fermi Energy. Carrier
lifetimes, τ n
and τ p
, can be either constant or dependent upon the total doping concentration (parameter
consrh in model card). The formula for the doping dependent is as follows:
τ = -----------------------------------
(3.45)
1 + N tot ⁄ N SRH
where N tot
is the total doping concentration, and the default values for parameters τ 0
and N srh
are the
–7
16
same for both types of carriers in silicon and τ s and cm -3 0 = 1×10
N srh = 5×10
. If the interfacial
recombination is to be included, it is through the change of carrier lifetime in the following way:
τ eff
(3.46)
where A and d are partial area and interface length associated with the node in the element,
respectively, and is the interface recombination velocity.
s int
3.3.4 Auger Recombination
1
------- =
τ 0
ds int 1
---------- + --
A τ
This is a three-carrier recombination process, involving either two electrons and one hole or two holes
and one electron. The dependence on n and p is as follows:
2
u Aug ( n,
p) = ( c n n + c p p) ( np – n i )
(3.47)
–31
–32
where the default values for c and in silicon are and cm 6 s -1 n c p 2.8×10 9.9×10
, respectively.
PISCES-2ET – 2D Device Simulation for Si and Heterostructures 31